• Korean Journal of Materials Research
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• v.3 no.1
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• pp.43-49
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• 1993

Excellent deep drawability and strain aging rsistance are obtained by the addition of alloying elements such as Ti and Nb which can form carbide and nitride easily into Al killed extra low carbon steel. Recrystallization textures and mechanical properties of the three different extra low carbon steels with B containing Nb only, Ti only, and both Nb and Ti, respectively, along with have been compared. Inverse pole figure shows that (100) and (111) texture intensities of Nb containing steel changed a lot during the annealing treatment and the degree of texture-structural change in the steel containing both Nb and Ti is about the same as that in the Ti-containing 5teel. After annealing the pole figure shows that the {Ill} < 110 > and {112} < 110> textures are the strongest in the cold rolled state and the annealed state, respectively. However, there is little difference in texture structure among the three kinds of steels. There is a tendency that the steel containing both Nb and Ti the grain size of which is the smallest is the highest in hardness. Nb-containing steel is the next and Ti -containing steel is the last in hardness.

• Geophysics and Geophysical Exploration
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• v.13 no.1
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• pp.102-108
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• 2010

The internal structure of a river embankment must be delineated as part of investigations to evaluate its safety. Geophysical methods can be most effective means for that purpose, if they are used together with geotechnical methods such as the cone penetration test (CPT) and drilling. Since the dyke body and subsoil in general consist of material with a wide range of grain size, the properties and stratification of the soil must be accurately estimated to predict the mechanical stability and water infiltration in the river embankment. The strength and water content of the levee soil are also parameters required for such prediction. These parameters are usually estimated from CPT data, drilled core samples and laboratory tests. In this study we attempt to utilise geophysical data to estimate these parameters more effectively for very long river embankments. S-wave velocity and resistivity of the levee soils obtained with geophysical surveys are used to classify the soils. The classification is based on a physical soil model, called the unconsolidated sand model. Using this model, a soil profile along the river embankment is constructed from S-wave velocity and resistivity profiles. The soil profile thus obtained has been verified by geotechnical logs, which proves its usefulness for investigation of a river embankment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.222-222
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• 2012

Metal oxide gas sensors based on semiconductor type have attracted a great deal of attention due to their low cost, flexible production and simple usability. However, most works have been focused on n-type oxides, while the characteristics of p-type oxide gas sensors have been barely studied. An investigation on p-type oxides is very important in that the use of them makes possible the novel sensors such as p-n diode and tandem devices. Monoclinic cupric oxide (CuO) is p-type semiconductor with narrow band gap (~1.2 eV). This is composed of abundant, nontoxic elements on earth, and thus low-cost, environment-friendly devices can be realized. However, gas sensing properties of neat CuO were rarely explored and the mechanism still remains unclear. In this work, the neat CuO layers with highly ordered mesoporous structures were prepared by a template-free, one-pot solution-based method using novel ink solutions, formulated with copper formate tetrahydrate, hexylamine and ethyl cellulose. The shear viscosity of the formulated solutions was 5.79 Pa s at a shear rate of 1 s-1. The solutions were coated on SiO2/Si substrates by spin-coating (ink) and calcined for 1 h at the temperature of $200{\sim}600^{\circ}C$ in air. The surface and cross-sectional morphologies of the formed CuO layers were observed by a focused ion beam scanning electron microscopy (FIB-SEM) and porosity was determined by image analysis using simple computer-programming. XRD analysis showed phase evolutions of the layers, depending on the calcination temperature, and thermal decompositions of the neat precursor and the formulated ink were investigated by TGA and DSC. As a result, the formation of the porous structures was attributed to the vaporization of ethyl cellulose contained in the solutions. Mesoporous CuO, formed with the ink solution, consisted of grains and pores with nano-meter size. All of them were strongly dependent on calcination temperature. Sensing properties toward H2 and C2H5OH gases were examined as a function of operating temperature. High and fast responses toward H2 and C2H5OH gases were discussed in terms of crystallinity, nonstoichiometry and morphological factors such as porosity, grain size and surface-to-volume ratio. To our knowledge, the responses toward H2 and C2H5OH gases of these CuO gas sensors are comparable to previously reported values.

• Korean Chemical Engineering Research
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• v.51 no.2
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• pp.214-220
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• 2013

Hydrophobic coating on a silicate-based yellow phosphor ($Sr_2SiO_4:Eu^{2+}$) was carried out by using hexamethyldisiloxane (HMDSO) precursor in an atmospheric pressure dielectric barrier discharge plasma reactor, eventually to improve the long-term stability and reliability of the phosphor. The phosphor powder samples were characterized by a scanning electron microscope (SEM), a transmission electron microscope (TEM), a fluorescence spectrophotometer and a contact angle analyzer. After the coating was prepared, the contact angle of the phosphor powder increased to $133.0^{\circ}$ for water and to $140.5^{\circ}$ for glycerol, indicating that a hydrophobic layer was formed on its surface. The phosphor coated with HMDSO exhibited photoluminescence enhancement up to 7.8%. The SEM and TEM images of the phosphor powder revealed that the plasma coating led to a morphological change from grain-like structure to smooth surface with 31~46 nm thick hydrophobic layer. The light emitting diode (3528 1 chip LED) fabricated with the coated phosphor showed a substantial enhancement in the reliability under a special test condition at $85^{\circ}C$ and 85% relative humidity for 1,000 h (85/85 testing). The plasma-mediated method proposed in this work may be applicable to the formation of 3-dimensional coating layer on irregular-shaped phosphor powder, thereby improving the reliability.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.83-89
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• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.4
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• pp.152-158
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• 2018

PVT (Physical Vapor Transport) method has advantages in producing high quality, large scale wafers where many researches are being carried out to commercialize nitride semiconductors. However, complex process variables cause various defects when it had non-equilibrium growth conditions. Annealing process after crystal growth has been widely used to enhance the crystallinity. It is important to set appropriate temperature, pressure, and annealing time to improve crystallinity effectively. In this study, the effect of the annealing conditions on the crystalline structure variation of the AlN single crystal grown by PVT method was investigated with synchrotron whitebeam X-ray topography, electron backscattered diffraction (EBSD), and Rietveld refinement. X-ray topography analysis showed secondary phases, sub-grains, impurities including carbon inclusion in the single crystal before annealing. EBSD analyses identified that sub-grains with slightly tilted basal plane appeared and the overall number of grains increased after the annealing process. Rietveld refinement showed that the stress caused by the temperature gradient during the annealing process between top and bottom in the hot zone not only causes distortion of grains but also changes the lattice constant.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Journal of the Korean Electrochemical Society
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• v.4 no.4
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• pp.172-175
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• 2001

Nanophase catalyst layer for direct methanol fuel cell has been fabricated by magnetron sputtering method. Catalyst metal targets and carbon were sputtered simultaneously on the Nafion membrane surface at abnormally higher gas (Ar/He mixture) pressure than that of normal thin film processing. They could be coated as a novel structure of catalyst layer containing porous PtRu or Pt and carbon particles both in nanometer range. Membrane electrode assembly made with this layer led to a reduction of the catalyst loading. At the catalyst loading of 1.5mg $PtRu/cm^2$ for anode and 1mg $Pt/cm^2$ for cathode, it could provide $45 mW/cm^2$ in the operation at 2 M methanol, 1 Bar Air at 80"C. It is more than $30\%$ increase of the power density performance at the same level of catalyst loading by conventional method. This was realized due to the ultra fine particle sizes and a large fraction of the atoms lie on the grain boundaries of nanophase catalyst layer and they played an important role of fast catalyst reaction kinetics and more efficient fuel path. Commercialization of direct methanol fuel cell for portable electronic devices is anticipated by the further development of such design.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.1-7
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• 2004

Tin plating on component finishes may grow whiskers under certain conditions, which may cause failures in electronics equipment. To protect the environment, 'lead-free' among component finishes is being promoted worldwide. This paper presents the evaluation results of whiskers on two kinds of lead-free plating materials at the plating temperature and under the reliability test. The rising plating temperature caused increasing the size of plating grain and shorting the growth of whisker. The whisker was grown under the temperature cycling the bent type in matt Sn plating and striated type in malt Sn-Bi. The whisker growth in Sn-Bi plating was shorter than that in Sn plating. In FeNi42 leadframe, the $7.0{\~}10.0{\mu}m$ diameter and the $25.0{\~}45.0{\mu}m$ long whisker was grown under 300 cycles. In the 300 cycles of Cu leadframe, only the nodule(nuclear state) grew on the surface, and in the 600 cycles, a $3.0{\~}4.0{\mu}m$ short whisker grew. After 600 cycles, the ${\~}0.34{\mu}m$ thin $Ni_3Sn_4$ formed on the Sn-plated FeNi42. However, we observed the amount of $0.76{\~}1.14{\mu}m$ thick $Cu_6Sn_5$ and ${\~}0.27{\mu}m$ thin $Cu_3Sn$ intermetallics were observed between the Sn and Cu interfaces. Therefore, the main growth factor of a whisker is the intermetallic compound in the Cu leadframe, and the coefficient of thermal expansion mismatch in FeNi42.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.323-327
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• 2003

Microwave dielectric properties of (P $b_{0.4}$C $a_{0.6}$)[($Fe_{\frac{1}{2}}$N $b_{\frac{1}{2}}$)$_{1-x}$ (M $g_{1}$ 3/N $b_{2}$ 3/)x] $O_3$ (PCFMN) ceramics were investigated as a function of (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content (0.1$\leq$x$\leq$0.8). A single perovskite phase with the cubic structure was obtained through the given composition range. The unit cell volume was increased with (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$, due to the larger average ionic size of (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ than that of ($Fe_{\frac{1}{2}}$N $b_{\frac{1}{2}}$)$^{4+}$ for B-site ion. Dielectric constant (K) and Temperature Coefficient of Resonant Frequency(TCF) of PCFMN ceramics were dependent on (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content due to the decrease of ionic polarizability and B-site bond valence, respectively. Qf value was decreased with (M $g_{1}$ 3/N $b_{2}$ 3/)$^{4+}$ content due to the decrease of grain size. Typically, K of 73.56, Qf of 5,074 GHz and TCF of -6.45 ppm/$^{\circ}C$ were obtained for the specimens with x=0.4 sintered at 125$0^{\circ}C$ for 3 h.125$0^{\circ}C$ for 3 h.