• Journal of Advanced Marine Engineering and Technology
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• 제23권6호
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• pp.761-769
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• 1999

In this paper the effect of aging heat treatment to the Corrosion behavior for the Nimonic 80A superalloy was studied by AC Impedance methods. Tested solution was 3.5% with tempera-ture $25^{\circ}C$ Electro-chemical corrosion test were carried out for the Nimonic 80A super-alloy which solution heat treated at $1080^{\circ}C$ for 8 hours followed by aging heat treated at $650^{\circ}C,\;700^{\circ}C,\;750^{\circ}C\;800^{\circ}C$ and $850^{\circ}C$ with 16hours under vacuum environment. The obtained results were as follows; 1. Base metal and solution-treated materials were exhibited similar corrosion tendency as Ran-dle equivalent cell. The value of passive film resistance was 579 ohms for the base metal and 124,770 ohms for the solutionized metal such a difference was arose by the ${{\gamma}_^'}$ precipitate on the metal surface during heat treatment. 2. The measure value of $R_p$ for heat-treated at $650^{\circ}C,\;700^{\circ}C,\;800^{\circ}C$and $850^{\circ}C$ were 97,943, 93, 111, 26,961, 15,798 and 11,780ohm respectively. Which indicated that the passive film resistance Rp was reduced as aging temperature increased due to the growth of grain size and sensitization at the grain boundary. 3. The similar tendency was exhibited for corrosion behavior of the electro-chemical corrosion polarization method and AC impedance method and confirmed that AC impedance method was useful tool for corrosion research.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 한국재료학회지
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• 제14권4호
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• pp.246-250
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• 2004

We have investigated the effects of boron added to Cu film on the Cu-Ti reaction and microstructural evolution of Cu(B) alloy film during annealing of Cu(B)/Ti/$SiO_2$/Si structure. The result were compared with those of Cu(B)/$SiO_2$ structure to identify the effects of Ti glue layers on the Boron behavior and the result grain growth of Cu(B) alloy. The vacuum annealing of Cu(B)/Ti/$SiO_2$ multilayer structure allowed the diffusion of B to the Ti surface and forming $TiB_2$ compounds at the interface. The formed $TiB_2$ can act as a excellent diffusion barrier against Cu-Ti interdiffusion up to $800^{\circ}C$. Also, the resistivity was decreased to $2.3\mu$$\Omega$-cm after annealing at $800^{\circ}C$. In addition, the presence of Ti underlayer promoted the growth Cu(l11)-oriented grains and allowed for normal growth of Cu(B) film. This is in contrast with abnormal growth of randomly oriented Cu grains occurring in Cu(B)/$SiO_2$ upon annealing. The Cu(B)/Ti/$SiO_2$ structure can be implemented as an advanced metallization because it exhibits the low resistivity, high thermal stability and excellent diffusion barrier property.

• 한국결정성장학회지
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• 제18권6호
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• pp.237-241
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• 2008

AlN 소결체를 제조함에 있어서 $Y_2O_3$를 소결 첨가제로 하여 일축 가압 소결법을 적용하여 소결 조제 첨가량의 변화와 소결 시간의 변화에 따른 소결 특성, 미세구조 및 열전도도 측성에 대하여 조사하였다. $Y_2O_3$의 첨가로 인하여 AlN의 치밀화가 첨가하지 않은 경우보다 증진됨을 확인할 수 있었으며, 결정립계 및 결정립계 삼중점에서 YAG 이차상을 형성함으로써 AlN 결정 격자 내의 산소 결함 농도를 낮춰 열전도도를 향상시킴을 알 수 있었다. 특히, 소결 시간을 증대함에 따라 결정립 성장 및 열전도도의 방해 요소인 YAG 이차상이 고온에서 휘발됨에 따라 열전도도가 크게 향상됨을 확인할 수 있었다.

• 한국세라믹학회지
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• 제41권8호
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• pp.567-572
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• 2004

The variation of the sintered density and grain size of UO$_2$ as a function of the Li$_2$O amount and sintering atmosphere was observed. Li$_2$O enhanced the grain growth of the UO$_2$ pellet in H$_2$, but rather hindered it in $CO_2$ atmosphere. Grain size of the UO$_2$ and UO$_2$-0.1 wt%Li$_2$O pellets was, respectively, 8 $\mu$m and 100 $\mu$m at 168$0^{\circ}C$ in the H$_2$ atmosphere, and that of each pellet was, respectively, 24 $\mu$m and 17 $\mu$m at the same temperature in the $CO_2$ atmosphere. As-received Li$_2$O powder, which had been composed of Li$_2$O and LiOH, was converted to the Li$_2$CO$_3$ phase after heating to 80$0^{\circ}C$ in $CO_2$. On the other hand, the Li$_2$O and LiOH phases remained unchanged in H$_2$ atmosphere. In the H$_2$, the as-received Li$_2$O powder began to evaporate at about 105$0^{\circ}C$ and then about 20 wt% residue was left at 150$0^{\circ}C$. But, most of the Li elements evaporated at 150$0^{\circ}C$ in the $CO_2$ atmosphere.

• Nuclear Engineering and Technology
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• 제31권3호
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• pp.335-343
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• 1999

The effects of N $b_2$ $O_{5}$ and oxygen potential on the densification and grain growth of U $O_2$ fuel have been investigated.0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$fuel pellets were sintered at 1$700^{\circ}C$ for 4 hours in sintering atmospheres which have various ratios of $H_2O$ to $H_2$ gas. Compared with those of undoped U $O_2$ pellets, the sintered density and grain size of the 0.3 wt% N $b_2$ $O_{5}$ -doped U $O_2$ pellet increase under the $H_2O$/ $H_2$ gas ratio of 5.0$\times$10$^{-3}$ to 1.0$\times$10$^{-2}$ and under the $H_2O$/ $H_2$gas ratio of 5.0$\times$10$^{-3}$ to $1.5\times$10$^{-2}$ , respectively. The sintering of U $O_2$fuel pellets containing 0.1 wt% to 0.5 wt% N $b_2$ $O_{5}$ was carried out at 168$0^{\circ}C$ for 4 hours. The enhancing effect of N $b_2$ $O_{5}$ on the sintered density and grain size becomes larger as the N $b_2$ $O_{5}$ content increases. The solubility limit of N $b_2$ $O_{5}$ in U $O_{2}$ seems to be between 0.3 wt% and 0.5 wt%, and beyond the solubility limit the second phase whose composition corresponds near to N $b_2$U $O_{6}$ is precipitated on grain boundary. The enhancement of densification and grain growth in U $O_2$ is attributed to the increased concentration of a uranium vacancy which is formed by the interstitial N $b^{4+}$ ion in the U $O_2$ lattice.

• 방사성폐기물학회지
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• 제16권4호
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• pp.411-420
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• 2018

공기 분위기하 $UO_2$의 독특한 산화거동을 모사하기 위해 기존 Crackling Core Model (CCM)을 개선하였다. $UO_2$가 $U_3O_8$으로 전환될 때 시간-전환율 곡선에서 나타나는 실험적 sigmoid 거동을 근사하게 재현할 수 있도록 모델 개선에 파편화 효과로 인한 반응 표면적 증대 및 결정립 가변 전환시간 개념을 고려하였다. $UO_2$는 $U_3O_7$을 거쳐 $U_3O_8$으로 전환되며 최종 결정립 산화소요 시간은 초기 결정립 산화 소요 시간의 10배에 해당한다는 가정을 도입했을 때, 개선된 모델은 599 - 674 K에서의 $UO_2$ 구형 입자의 실험적 산화거동과 근사한 계산결과를 나타내었으며 핵종성장모델(Nucleation and Growth Model) 및 자촉매반응모델(AutoCatalytic Reaction Model)과 비교할 때 가장 작은 오차를 보여주었다. 개선된 모델을 통해 $U_3O_8$으로의 100% 전환시 계산된 활성화에너지값은 $57.6kJ{\cdot}mol^{-1}$로 자촉매반응모델로 계산된 값인 $48.6kJ{\cdot}mol^{-1}$보다 크며, 외삽에 의해 결정된 실험값에 더 근사함이 밝혀졌다.

• 한국재료학회지
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• 제13권1호
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• pp.1-5
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• 2003

Uniform polycrystalline $CoSi_2$layers have been grown in situ on a polycrystalline Si substrate at temperature near $625^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η$^{5}$ -C$_{5}$ H$_{5}$ )(CO)$_2$. The growth behavior and thermal stability of $CoSi_2$layer grown on polycrystalline Si substrates were investigated. The plate-like CoSi$_2$was initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial $CoSi_2$layer was grown from the discrete $CoSi_2$plate, where the orientation of the$ CoSi_2$layer is same as the orientation of polycrystalline Si grain. The interface between $CoSi_2$layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform $CoSi_2$layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of $CoSi_2$layer was controlled by diffusion of cobalt. The thermal stability of $CoSi_2$layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from $600^{\circ}C$ to $900^{\circ}C$. The $CoSi_2$layer was degraded at $900^{\circ}C$. Inserting a TiN interlayer between polycrystalline Si and $_CoSi2$layers improved the thermal stability of $CoSi_2$layer up to $900^{\circ}C$ due to the suppression of the Co diffusion.

• 한국결정성장학회지
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• 제31권1호
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• pp.32-36
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• 2021

본 연구는 레이저 침탄된 TiZrN 코팅층의 탄소확산거동 측면과 이에 따른 기계적 특성 변화를 연구·고찰하였다. TiZrN 코팅에 탄소페이스트를 도포한 후, 레이저를 조사하여 침탄시켰다. 침탄 이후에 (111)상에 해당하는 XRD 피크가 저각으로 이동하여, 도핑된 탄소에 의한 격자팽창을 보여주었다. 아울러, 투입된 탄소의 입계 확산에 의한 결정립의 크기가 감소하였다. 침입된 탄소의 결합상태를 확인하기 위한 XPS 분석결과, 레이저의 열에너지를 통해 탄소가 TiZrN내 질소 원자와 치환되어 탄화물(TiC 또는 ZrC)을 보였다. 아울러, sp2와 sp3 혼성화 결합이 혼재하는 상태를 보여 비정질 탄소가 형성된 것을 확인할 수 있었다. 침탄 전후 TiZrN 코팅층의 단면 TEM 이미지와 inverse FFT 분석결과, 격자 중간에 물결형상이 관찰되어 결정립계 내 비정질 상의 형성을 보여주었다. 침탄 후 경도는 34.57 G Pa에서 38.24 G Pa로 증가하였으며, 마찰계수는 83 % 감소하였다. 특히, 외부 하중에 저항하는 지표로 활용되는 H/E는 0.11에서 0.15으로 증가하였고 wear rate는 65 % 개선되는 것을 확인할 수 있었다.

• Applied Microscopy
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• 제47권1호
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• pp.50-54
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• 2017

The microstructure, the crystallization behavior, and magnetic properties of FeSi-based soft magnetic alloys (FINEMET) were investigated using transmission electron microscopy, X-ray diffraction, and coercive force measurements. The amorphous $Fe_{73.28}Si_{13.43}B_{8.72}Cu_{0.94}Nb_{3.63}$ alloys particles, prepared in $10^{-4}$ torr by gas atomization process, were heat treated at $530^{\circ}C$, $600^{\circ}C$, and $670^{\circ}C$ for 1 hour in a vacuum of $10^{-2}$ torr. Nanocrystalline Fe precipitation was first formed followed by the grain growth. Phase formation and crystallite sizes was compared linked to its magnetic behavior, which showed that excellent soft magnetic property can directly be correlated with its microstructure.