• 한국세라믹학회지
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• 제45권9호
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• pp.567-571
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• 2008

The properties of a grown film by the chemical vapor deposition process depend on the deposition temperature because the deposition mechanism of the CVD film is controlled by the deposition temperature. The preferred orientation of the zrC film changed from (111) to (220) or (200) with an increase of the deposition temperature. The grain size of the ZrC film changes from $0.8{\mu}m$ to $2.5{\mu}m$ in the range of 1350 to $1500^{\circ}C$. The hardness of the deposited ZrC film depended on the preferred orientation and the grain size. The hardness of the ZrC film deposited at $1400^{\circ}C$ was 31 GPa.

• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.9-11
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• 2013

We have investigated the effect of thickness of the MgB2 film on the grain growth direction as well as on their superconducting properties. $MgB_2$ films of various thicknesses were fabricated on c-cut $Al_2O_3$ substrates at a temperature of $540^{\circ}C$ by using hybrid physical-chemical vapor deposition (HPCVD) technique. The superconducting transition temperature ($T_c$) was found to increase with increase in the thickness of the $MgB_2$ film. X-ray diffraction analysis revealed that the orientation of grains changed from c-axis to a-axis upon increasing the thickness of the $MgB_2$ film from 0.6 to 2.0 ${\mu}m$. $MgB_2$ grains of various orientations were observed in the microstructures of the films examined by scanning electron microscopy. It is observed that at high magnetic fields the 2.0-${\mu}m$-thick film exhibit considerably larger critical current density ($J_c$) as compared to 0.6-${\mu}m$-thick film. The results are discussed in terms of an intrinsic-pinning in $MgB_2$ similarly as intrinsic-pinning occurring in high-Tc cuprate superconductors with layered structure.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.158-164
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• 1995

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

• 한국표면공학회지
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• 제29권5호
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• pp.570-576
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• 1996

Cu films for future ULSI metallization were prepared by partially ionized beam (PIB) deposition and characterized in terms of preferred orientation, grain size, roughness and resistivity. PIB-Cu films were prepared on Si (100) at pressure of $8 \times 10^{-7}$~$1 \times 10^{-6}$ Torr. Effects of acceleration voltage and ionization potential on the properties of PIB-Cu films have been investigated. As the acceleration voltage increased at constant ionization potential of 400 V, the degree of preferred orientation and surface smoothness of the Cu film increased. At the ionization potential of 450 V, the degree of preferred orientation at the acceleration voltage higher than 2 kV decreased and surface roughness increased with acceleration voltage. Grain size of Cu films increased to 1100 $\AA$ initially up to applied acceleration voltage of 1 kV, above which a little increase occurred with the acceleration voltage. There was no indication of impurities such as C, O in all sample. Resistivity of Cu film had the same trends as the surface roughness with acceleration voltage and ionization potential. The increase of electrical resistivity of PIB-Cu films was explained in terms of grain size and surface roughness

• 한국표면공학회지
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• 제35권1호
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• pp.33-38
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• 2002

CrN 박막이 펄스마그네트론증착법에 의하여 glass, Si(110), AISI 1040 steel 위에 증착되어졌다. 각 기판 위에 증착된 CrN 박막의 구조는 표면의 접촉특성 보다는 표면의 구조에 영향을 받는 것으로 판단되어 진다. 또한 grain의 크기는 기판에 관계없이 증착 시간이 증가함에 따라 증가한다. AISI 1040 steel 위에 증착된 CrN 박막의 grain 성장과 구조는 glass와 Si에 비하여 바이어스에 강하게 영향을 받는다. 이러한 결과는 glass 와 Si 보다도 금속이 높은 전기전도성을 가지고 있기 때문인 것으로 생각되어 진다.

• 한국결정성장학회지
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• 제14권4호
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• pp.151-154
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• 2004

Issues of ferroelectric high-density memories (>64 Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than $0.1\;\mu\textrm{m}^2$ and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by FEG-SEM/EBSD. Ferroelectric domain characteristics by PFM were also performed to study the dependence of reliabilities on the grain orientations and distributions. It is believed that understandings of the nucleation and growth mechanisms of the a- or b-axis oriented films during the thermal processes such as RTA and furnace annealing affecting on grain orientation and uniformity could be possible based on our experimental results.

• Applied Microscopy
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• 제45권1호
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• pp.23-31
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• 2015

Dark field (DF) transmission electron microscopy image has become a popular characterization method for two-dimensional material, graphene, since it can visualize grain structure and multilayer islands, and further provide structural information such as crystal orientation relations, defects, etc. unlike other imaging tools. Here we present microstructure of graphene, particularly, using DF imaging. High-angle grain boundary formation wass observed in heat-treated chemical vapor deposition-grown graphene on the Si substrate using patch-quilted DF imaging processing, which is supposed to occur by strain around multilayer islands. Upon the crystal orientation between layers the multilayer islands were categorized into the oriented one and the twisted one, and their local structure were compared. In addition information from each diffraction spot in selected area diffraction pattern was summarized.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2001년도 제34회 추계학술대회 개최
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• pp.88-95
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• 2001

Silicon nitride based ceramics reinforced with 3wt% Si$_{3}$N$_{4}$ whisker was prepared by tape casting to investigate the effect of microstructure on erosion behaviors. Hardness and fracture toughness were measured with prepared specimens. A gas blast type erosion tester was used to examine the erosion behavior of the specimens with different impact directions and angles. The erosion rate increases with increasing impact angle. Erosion rate of the silicon nitride ceramics also depends on the grain orientations, The erosion rate was lowered when impaction direction was parallel to the grain orientation This result was explained by the crack deflection and bridging due to the grain orientation.

• 한국세라믹학회지
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• 제32권3호
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• pp.313-320
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• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

• 한국세라믹학회지
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• 제38권10호
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• pp.914-920
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• 2001

새로운 소결법인 방전플라즈마소결법(SPS: Spark Plasma Sintering)으로 제조된 $ZrB_2$-ZrC 복합체의 결정립 방위분포 및 결정입계의 특성을 EBSP(Electron Back-Scattered Pattern)법으로 분석하여 상압소결법(PLS, Pressureless Sintering)에 의한 시편과 비교하였다. 방전플라즈마 소결법으로 제조된 시편의 $ZrB_2$ 결정립은 상압소결된 시편과는 다르게 (0001)면이 시편표면에 수직한 배향(normal direction)을 나타냈으며, ZrC 결정립은 두 경우 무질서한 배향을 나타냈다. 결정입계 특성 분석에서 low angle $(<15^{\circ})$의 분포는 상압소결법인 경우 전체 입계 중 약 10%, 방전플라즈마 소결법은 8%로 두 소결체에서 큰 차이를 보이지 않았으나, CSL(Coincident Site Lattice) 입계의 분포에서는 방전플라즈마 소결법으로 제조된 복합체에서 $\Sigma$ 3,5,7,9,11의 CSL 분포가 상압소결법에 비해 높은 분율을 나타냈다.