Nucleation and growth mechanism of nitride films deposited on glass by unbalanced magnetron sputtering

For the evaluation of nucleation and growth behaviors influenced by substrate properties, such as surface energy, structure and electrical properties, chromium nitride films (CrN) were deposited on various substrates (glass, AISI 1040 steel and Si (110) by unbalanced magnetron sputtering. X-ray diffraction and Atomic Force Microscopy (AFM) were used to study the microstructure and grain growth as a function of deposition time. The diffraction patterns of CrN thin films deposited on Si (110) exhibited crystalline structure with highly preferred orientation of (200) plane parallel to the substrate, whereas the films deposited on glass and AISI 1040 exhibited preferred orientations (200) and minor orientation (111), (311) or (220) plane. The orientation of films deposited both on glass and Si substrates did not depend on the bias voltage (Vs). The grain growth and structure of film deposited on AISI 1040 steel substrate are strongly influenced by the substrate bias in comparison with that deposited onto glass and Si substrates. The differences in the structure and grain growth of CrN films deposited onto different substrates are predominantly related to the properties of the substrate (structure and electrical conductivity).

마그네트론 스퍼터링에 의하여 다양한 기판 위에 증착된 CrN 박막의 핵생성과 성장거동

CrN 박막이 펄스마그네트론증착법에 의하여 glass, Si(110), AISI 1040 steel 위에 증착되어졌다. 각 기판 위에 증착된 CrN 박막의 구조는 표면의 접촉특성 보다는 표면의 구조에 영향을 받는 것으로 판단되어 진다. 또한 grain의 크기는 기판에 관계없이 증착 시간이 증가함에 따라 증가한다. AISI 1040 steel 위에 증착된 CrN 박막의 grain 성장과 구조는 glass와 Si에 비하여 바이어스에 강하게 영향을 받는다. 이러한 결과는 glass 와 Si 보다도 금속이 높은 전기전도성을 가지고 있기 때문인 것으로 생각되어 진다.