• 제목/요약/키워드: Grain Boundary Energy

검색결과 212건 처리시간 0.032초

Structure and Magnetic Properties of a Fe73.5Si13.5B9Nb3Cu1 Alloy Nanopowder Fabricated by a Chemical Etching Method and Milling Procedure

  • Hong, Seong-Min;Kim, Jeong-Gon;Kim, Cheol-Gi
    • Journal of Magnetics
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    • 제14권2호
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    • pp.71-74
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    • 2009
  • The magnetic and structural properties of FINEMET (the Hitachi product name of the Fe-Si-B-Nb-Cu alloy) nanopowder with a composition of $Fe_{73.5}Si_{13.5}B_9Nb_3Cu_1$ atomic percent were investigated after annealing, chemical etching, and mechanical milling. The primary and secondary crystallization temperatures were 523 and $550^{\circ}C$, respectively. The grain size of the particles was adjusted by annealing time. Optimally annealed particles exhibited a homogenous microstructure composed of nanometer-sized crystalline grains. The grain boundary of the annealed particles was etched preferentially by chemical etching. Chemically etched particles were broken at the grain boundary by high-energy ball milling. As a result, a nanometer-sized FINEMET powder with a uniform size of crystalline grains was fabricated.

온도보상용 세라믹 커패시터의 전기적 특성에 관한 연구 (A study on electrical characteristics of ceramics capacitor for temperature compensation)

  • 홍경진;정우성;김태성;이은학;이준웅
    • E2M - 전기 전자와 첨단 소재
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    • 제8권5호
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    • pp.640-647
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    • 1995
  • In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.

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A combined stochastic diffusion and mean-field model for grain growth

  • Zheng, Y.G.;Zhang, H.W.;Chen, Z.
    • Interaction and multiscale mechanics
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    • 제1권3호
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    • pp.369-379
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    • 2008
  • A combined stochastic diffusion and mean-field model is developed for a systematic study of the grain growth in a pure single-phase polycrystalline material. A corresponding Fokker-Planck continuity equation is formulated, and the interplay/competition of stochastic and curvature-driven mechanisms is investigated. Finite difference results show that the stochastic diffusion coefficient has a strong effect on the growth of small grains in the early stage in both two-dimensional columnar and three-dimensional grain systems, and the corresponding growth exponents are ~0.33 and ~0.25, respectively. With the increase in grain size, the deterministic curvature-driven mechanism becomes dominant and the growth exponent is close to 0.5. The transition ranges between these two mechanisms are about 2-26 and 2-15 nm with boundary energy of 0.01-1 J $m^{-2}$ in two- and three-dimensional systems, respectively. The grain size distribution of a three-dimensional system changes dramatically with increasing time, while it changes a little in a two-dimensional system. The grain size distribution from the combined model is consistent with experimental data available.

$90\%$ 단면감소율로 인발된 전해동의 어닐링시 집합조직과 미세조직 발달에 미치는 전단 변형의 영향 (Effects of Shear Strains on the Developement of Texture and Microstructure of $90\%$ Drawn Copper Wire during Annealing)

  • 박현;이동녕
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 제4회 압출 및 인발가공 심포지엄
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    • pp.55-62
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    • 2001
  • An electrolytic copper rod was drawn up to $90\%$ in area reduction and annealed under various conditions. The EBSD measurement of the drawn wire showed that in the center region the <111> + <100> fiber duplex texture was dominant, while in the middle and surface regions relatively defused textures developed with a little higher density in <11w>//wire axis. The inhomogeneous texture in the deformed wire gave rise to the inhomogeneous microstructure and texture after annealing. The annealing texture could be classified into the recrystallization texture developed during low temperatures and at the early stage at a high temperature and the growth texture developed after a prolonged annealing at the high temperature. The recrystallization temperature could be explained by the strain energy release maximization model and the growth texture was discussed based on the grain boundary mobility anisotropy.

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$ZrO_2$를 이차상으로한 복합체의 기계적 특성 (A Study on the Mechanical Properties of $ZrO_2$ Based Composite)

  • 신동우;김종희
    • 한국세라믹학회지
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    • 제22권5호
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    • pp.76-84
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    • 1985
  • Mechanical property enhancing mechanisms of $Al_2O_3-ZrO_2$ two phase ceramic composites were studied for several compositions of different $ZrO_2$/$Al_2O_3$ ratio. Microstructural analysis of $Al_2O_3-ZrO_3$(pure) composites indicated that pre-existing microcrack due to larger $ZrO_2$ particle at grain boundary extended along alumina grain boundaries within process zone. Microcracks also nucleated when very small $ZrO_2$ particles at the grain boundaries transformed to monoclinic phase at near of main crack tip. These types of microcracks could contribute to the toughening achieved by creating additional crack surface area during crack propagation. Microstructural analyses also showed that the average grain size and abnormal grain size of $Al_2O_3$ were decreased with increasing $ZrO_2$ vol% in $Al_2O_3$ matrix. As a result it could be concluded as follows In TEX>$Al_2O_3-ZrO_3$(pure) system 1. Microcrack nucleation (stress-induced microcracking) and extension was effective mechanism for absorpiton of fracture energy 2, More narrow distribution and smaller grain size of $Al_2O_3$ due to $ZrO_2$particles mainly contributed to main-tatin the strength and hardness.

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베이나이트강의 미세조직과 저온 충격 인성에 미치는 바나듐과 보론의 영향 (Effect of Vanadium and Boron on Microstructure and Low Temperature Impact Toughness of Bainitic Steels)

  • 황원구;이훈;조성규;서준석;권용재;이정구;신상용
    • 한국재료학회지
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    • 제31권3호
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    • pp.139-149
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    • 2021
  • In this study, three kinds of bainitic steels are fabricated by controlling the contents of vanadium and boron. High vanadium steel has a lot of carbides and nitrides, and so, during the cooling process, acicular ferrite is well formed. Carbides and nitrides develop fine grains by inhibiting grain growth. As a result, the low temperature Charpy absorbed energy of high vanadium steel is higher than that of low vanadium steel. In boron added steel, boron segregates at the prior austenite grain boundary, so that acicular ferrite formation occurs well during the cooling process. However, the granular bainite packet size of the boron added steel is larger than that of high vanadium steel because boron cannot effectively suppress grain growth. Therefore, the low temperature Charpy absorbed energy of the boron added steel is lower than that of the low vanadium steel. HAZ (heat affected zone) microstructure formation affects not only vanadium and boron but also the prior austenite grain size. In the HAZ specimen having large prior austenite grain size, acicular ferrite is formed inside the austenite, and granular bainite, bainitic ferrite, and martensite are also formed in a complex, resulting in a mixed acicular ferrite region with a high volume fraction. On the other hand, in the HAZ specimen having small prior austenite grain size, the volume fraction of the mixed acicular ferrite region is low because granular bainite and bainitic ferrite are coarse due to the large number of prior austenite grain boundaries.

ZnO-Bi2O3-Mn3O4-Co3O4 바리스터의 결함과 전기적 특성 (Defects and Electrical Properties of ZnO-Bi2O3-Mn3O4-Co3O4 Varistor)

  • 홍연우;이영진;김세기;김진호
    • 한국전기전자재료학회논문지
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    • 제25권12호
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    • pp.961-968
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    • 2012
  • In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

유전함수를 이용한 ZnO-Bi2O3-Mn3O4 바리스터의 a.c. 특성 분석 (Analysis of a.c. Characteristics in ZnO-Bi2O3-Mn3O4 Varistor Using Dielectric Functions)

  • 홍연우;신효순;여동훈;김진호
    • 한국전기전자재료학회논문지
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    • 제23권12호
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    • pp.936-941
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    • 2010
  • In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

ZnO-Bi2O3-Co3O4 바리스터의 전기적 특성 (Electrical Properties of ZnO-Bi2O3-Co3O4 Varistor)

  • 홍연우;신효순;여동훈;김진호
    • 한국전기전자재료학회논문지
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    • 제24권11호
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    • pp.882-889
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    • 2011
  • In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.