• Title/Summary/Keyword: Graded layer

Search Result 242, Processing Time 0.03 seconds

Free vibration of an annular sandwich plate with CNTRC facesheets and FG porous cores using Ritz method

  • Emdadi, Mohsen;Mohammadimehr, Mehdi;Navi, Borhan Rousta
    • Advances in nano research
    • /
    • v.7 no.2
    • /
    • pp.109-123
    • /
    • 2019
  • In this article, the free vibration analysis of annular sandwich plates with various functionally graded (FG) porous cores and carbon nanotubes reinforced composite (CNTRC) facesheets is investigated based on modified couple stress theory (MCST) and first order shear deformation theories (FSDT). The annular sandwich plate is composed of two face layers and a functionally graded porous core layer which contains different porosity distributions. Various approaches such as extended mixture rule (EMR), Eshelby-Mori-Tanaka (E-M-T), and Halpin-Tsai (H-T) are used to determine the effective material properties of microcomposite circular sandwich plate. The governing equations of motion are extracted by using Hamilton's principle and FSDT. A Ritz method has been utilized to calculate the natural frequency of an annular sandwich plate. The effects of material length scale parameters, boundary conditions, aspect and inner-outer radius ratios, FG porous distributions, pore compressibility and volume fractions of CNTs are considered. The results are obtained by Ritz solutions that can be served as benchmark data to validate their numerical and analytical methods in the future work and also in solid-state physics, materials science, and micro-electro-mechanical devices.

Thermal frequency analysis of FG sandwich structure under variable temperature loading

  • Sahoo, Brundaban;Mehar, Kulmani;Sahoo, Bamadev;Sharma, Nitin;Panda, Subrata Kumar
    • Structural Engineering and Mechanics
    • /
    • v.77 no.1
    • /
    • pp.57-74
    • /
    • 2021
  • The thermal eigenvalue responses of the graded sandwich shell structure are evaluated numerically under the variable thermal loadings considering the temperature-dependent properties. The polynomial type rule-based sandwich panel model is derived using higher-order type kinematics considering the shear deformation in the framework of the equivalent single-layer theory. The frequency values are computed through an own home-made computer code (MATLAB environment) prepared using the finite element type higher-order formulation. The sandwich face-sheets and the metal core are discretized via isoparametric quadrilateral Lagrangian element. The model convergence is checked by solving the similar type published numerical examples in the open domain and extended for the comparison of natural frequencies to have the final confirmation of the model accuracy. Also, the influence of each variable structural parameter, i.e. the curvature ratios, core-face thickness ratios, end-support conditions, the power-law indices and sandwich types (symmetrical and unsymmetrical) on the thermal frequencies of FG sandwich curved shell panel model. The solutions are helping to bring out the necessary influence of one or more parameters on the frequencies. The effects of individual and the combined parameters as well as the temperature profiles (uniform, linear and nonlinear) are examined through several numerical examples, which affect the structural strength/stiffness values. The present study may help in designing the future graded structures which are under the influence of the variable temperature loading.

Strain Analysis for Quality Factor oft he Layered Mg0.93Ca0.07TiO3-(Ca0.3Li0.14Sm0.42)TiO3 Ceramics at Microwave Frequencies

  • Cho, Joon-Yeob;Yoon, Ki-Hyun;Kim, Eung-Soo
    • Journal of the Korean Ceramic Society
    • /
    • v.39 no.3
    • /
    • pp.222-225
    • /
    • 2002
  • Microwave dielectric properties of the layered and functionally graded materials (FGMs) of $Mg_{0.93}Ca_{0.07}TiO_3$ (MCT) and $(Ca_{0.3}Li_{0.14}Sm_{0.42})TiO_3$(CLST) were investigated as a function of the volume ratio of two components. Dielectric constant was decreased with an increase of the volume ratio of MCT which had a lower dielectric constant thant CLST. For the layered FGMs specimens, the difference of thermal expansion coefficients between two components induced thermal strain to dielectric layers, which was confirmed by the plot of ${\Delta}$k (X-ray diffraction peak width0 versus k (scattering vector) using the double-peak Lorentzian function, f(x). Quality factor of the specimens was affected by the thermal strain of dielectric layer, especially MCT layer. For the specimen with the volume ratio of MCT/CLST = 2, the qulaity factor of the specimen showed a minimum value due to the maximum thermal strain fo MCT layer.

A Study on the Fatigue behavior of Plasma Sprayed Coating Layer and Fatigue Life Variation of Steel (플라즈마 용사층의 피로거동 및 강의 피로수명 변화에 관한 연구)

  • Park, M. H.;Han, J. C.;Jung, C.;Song, Y. S.;Lo, B. H.;Lee, K. H.
    • Journal of Surface Science and Engineering
    • /
    • v.31 no.2
    • /
    • pp.81-90
    • /
    • 1998
  • NiCrAly/YSZ(8wt% Y2O3-Zro2) functionally fraded thermal barrier coating (FGC) layers on a Co-base sureralloy (HAYNESS 188) substrate were fabricated using Ar shielded single torch air plasma spraying method. Functional grading were produced with the stepwise compositional change throughout layer thinkness. Microstructural observation revealed a sucessful fabrication of NiCrAly/YSZ FGC. From the results of the curvature measurement, adhesive stength measurement and thermal shock test for the FGC, it was concluded that the optimum enhance of functionally graded coating layer thinkcess and compositional pattern exit to enhance the properties of FGC, which is closely reated to the internal residual distribution with it.

  • PDF

Structure and Electrical Properties of SiGe HBTs Designed with Bottom Collector and Single Metal Contact (Bottom Collector와 단일 금속층 구조로 설계된 SiGe HBT의 전기적 특성)

  • Choi, A.R.;Choi, S.S.;Yun, S.N.;Kim, S.H.;Seo, H.K.;Shim, K.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.187-187
    • /
    • 2007
  • This paper presents the electrical properties of SiGe HBTs designed with bottom collector and single metal layer structure for RF power amplifier. Base layer was formed with graded-SiGe/Si structures and the collector place to the bottom of the device. Bottom collector and single metal layer structures could significantly simplify the fabrication process. We studied about the influence of SiGe base thickness, number of emitter fingers and temperature dependence (< $200^{\circ}C$) on electrical properties. The feasible application in 1~2GHz frequency from measured data $BV_{CEO}$ ~10V, $f_r$~14 GHz, ${\beta\simeq}110$, NF~1 dB using packaged SiGe HBTs. We will discuss the temperature dependent current flow through the e-b, b-c junctions to understand stability and performance of the device.

  • PDF

Development of the educational management model for dynamic instability analysis in nanocomposite sandwich beam

  • Wenxi Tang;Chunhui Zhou;Maryam Shokravi;X. Kelaxich
    • Advances in nano research
    • /
    • v.17 no.1
    • /
    • pp.9-18
    • /
    • 2024
  • This paper presents the development of an educational management model for analyzing the dynamic instability of nanocomposite sandwich beams. The model aims to provide a comprehensive framework for understanding the behavior of sandwich micro beams with foam cores, featuring top and bottom layers made of smart and porous functionally graded materials (FGM) nanocomposites. The bottom layer is influenced by an external electric field, and the entire beam is supported by a visco-Pasternak foundation, accounting for spring, shear, and damping constants. Using the Kelvin-Voigt theory to model structural damping and incorporating size effects based on strain gradient theory, the model employs the parabolic shear deformation beam theory (PSDBT) to derive motion equations through Hamilton's principle. The differential quadrature method (DQM) is applied to solve these equations, accurately identifying the improvement in student understanding (ISU) of the beams. The impact of various parameters, including FGM properties, external voltage, geometric constants, and structural damping, on the DIR is thoroughly examined. The educational model is validated by comparing its outcomes with existing studies, highlighting the increase in ISU with the application of negative external voltage to the smart layer. This model serves as a valuable educational tool for engineering students and researchers studying the dynamic stability of advanced nanocomposite structures.

A Study on the high Temperature Properties of the Graded Thermal Barrier Coatings by APS and PAS (APS법으로 제조된 열장벽 피막과 PAS법으로 제조된 열장벽 성형체의 고온 물성에 관한 연구)

  • 강현욱;권현옥;한주철;송요승;홍상희;허성강;김선화
    • Journal of Surface Science and Engineering
    • /
    • v.32 no.2
    • /
    • pp.144-156
    • /
    • 1999
  • Thermal Barrier Coating with Functional Gradient Materials (FGM-TBC) can play an important role to protect the parts from harmful environments in high temperatures such as oxidation, corrosion, and wear and to improve the efficiency of aircraft engine by lowering the surface temperature on turbine blade. FGM-TBC can increase the life spans of product and improve the operating properties. Therfore, in this study the evaluations of mechanical and thermal properties of FGM-TBC such as fatigue, oxidation and wear-resistance at high temperatures have been conducted. The samples of both the TBC with 2, 3, 5 layers (YSZ/NiCrAlY) to be produced by Air Plasma Spray method (APS) and the bulk TBC with 6 layers to be produced by Plasma Assisted Sintering method (PAS) were used. Furthermore, residual stress, bond strength, and thermal conductivity were evaluated. The average thickness of the APS was 500$\mu\textrm{m}$ to 600$\mu\textrm{m}$ and the average thickness of the PAS was 3mm. The hardness number of the top layer of APS was 750 Hv to 810Hv and that of PAS was 950 Hv to 1440Hv. The $ZrO_2$ coating layer of APS was composed of tetragonal structure after spraying as the result of XRD analysis. As shown in the results of the high temperature wear test, the 3 layer coating of APS had the best wear resistance at $800^{\circ}C$ and the 5 layer coating of APS had the best wear resistance at $600^{\circ}C$. But, these coatings had the tendency of the low-temperature softening at $300^{\circ}C$. The main mechanism of wear was the adhesive wear and the friction coefficient of coatings was increased as increasing the test temperatures. A s results of thermal conductivity test, the ${\Delta}T$ of the APS coating was increased as number of layer and the range of thermal conductivity of the PAS was $800^{\circ}C$ to $1000^{\circ}C$.

  • PDF

Computer simulation for the effects of inserting the textured ZnO and buffer layer in the rear side of ZnO/nip-SiC: H/metal type amorphous silicon solar cells (Zno/nip-SiC:H/금속기판 구조 비정질 실리콘 태양전지의 후면 ZnO 및 완충층 삽입 효과에 대한 컴퓨터 수치해석)

  • Jang, Jae-Hoon;Lim, Koeng-Su
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1277-1279
    • /
    • 1994
  • In the structure of ZnO/nip-SiC: H/metal substrate amorphous silicon (a-Si:H) solar cells, the effects of inserting a rear textured ZnO in the p-SiC:H/metal interface and a graded bandgap buffer layer in the i/p-SiC:H have been analysed by computer simulation. The incident light was taken to have an intensity of $100mW/cm^2$(AM-1). The thickness of the a-Si:H n, ${\delta}$-doped a-SiC:H p, and buffer layers was assumed to be $200{\AA},\;66{\AA}$, and $80{\AA}$, respectively. The scattering coefficients of the front and back ZnO were taken to be 0.2 and 0.7, respectively. Inserting the rear buffer layer significantly increases the open circuit voltage($V_{oc}$) due to reduction of the i/p interface recombination rate. The use of textured ZnO markedly improves collection efficiency in the long wavelengths( above ${\sim}550nm$ ) by back scattering and light confinement effects, resulting in dramatic enhancement of the short circuit current density($J_{sc}$). By using the rear buffer and textured ZnO, the i-layer thickness of the ceil for obtaining the maximum efficiency becomes thinner(${\sim}2500{\AA}$). From these results, it is concluded that the use of textured ZnO and buffer layer at the backside of the ceil is very effective for enhancing the conversion efficiency and reducing the degradation of a-Si:H pin-type solar cells.

  • PDF

A Study on Aggregate Gradation of 10 mm Dense-graded Asphalt Mixture using Slag Aggregate (슬래그 골재를 사용한 10 mm 밀입도 아스팔트 혼합물의 골재입도 기준 연구)

  • Jo, Shin Haeng;Kim, Kyungnam;Kim, Nakseok
    • KSCE Journal of Civil and Environmental Engineering Research
    • /
    • v.35 no.6
    • /
    • pp.1367-1375
    • /
    • 2015
  • The purpose of this paper is to suggest 10 mm aggregate specification for thin layer asphalt pavement using steel slag. Aggregate gradations of conventional dense-graded asphalt mixtures were made by fuller's model, whereas 10 mm dense-graded asphalt mixture was obtained tender mix due to close to the maximum density line. The proposed aggregate gradation specification was made to have enough VMA and well-interlocking refer to foreign standards. The correlation between the proposed aggregate gradation and the properties of mixtures were analyzed using Gradation Ratio (GR) and Compacted Aggregate Density (CAD). The CAD index has a high $R^2$ of 0.86-0.99 because the CAD index is able to reflect various aggregate properties. As the results of evaluation by CAD index the proposed aggregate gradation provides more reliable stability and VMA. The percent passing (%) of aggregate size smaller than 0.3 mm was limited 10% or more for improving crack resistance. This limitation increased for 15% of the asphalt mixture's toughness.

Formation of Al0.3Ga0.7As/GaAs Multiple Quantum Wells on Silicon Substrate with AlAsxSb1-x Step-graded Buffer (AlAsxSb1-x 단계 성분 변화 완충층을 이용한 Si (100) 기판 상 Al0.3Ga0.7As/GaAs 다중 양자 우물 형성)

  • Lee, Eun Hye;Song, Jin Dong;Yoen, Kyu Hyoek;Bae, Min Hwan;Oh, Hyun Ji;Han, Il Ki;Choi, Won Jun;Chang, Soo Kyung
    • Journal of the Korean Vacuum Society
    • /
    • v.22 no.6
    • /
    • pp.313-320
    • /
    • 2013
  • The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.