• 센서학회지
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• 제28권4호
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• pp.262-265
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• 2019

The effect of inter-band transition on surface plasmon resonance in gold thin film was investigated. We induced localized inter-band transition in the film by using incident light on its surface from a green laser (532 nm) source, and the surface plasmon resonance for inter-band transition was investigated at different wavelengths. It was determined that the reflectivity of blue light (450 nm) was significantly reduced in the region where the green laser was incident. We demonstrated that this decrease is mainly due to the coupling between the blue light and the surface plasmon resonance of excited electrons in higher energy states, based on experimental results for the incident and polarization angle-dependent reflectivity of the blue light.

• 한국레이저가공학회지
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• 제10권2호
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• pp.25-28
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• 2007

Rapidity and flexibility are very important in the electronic components industry. The laser process provides the industry with more rapidity and flexibility. For this reason, the laser process is considered as an acceptable method in terms of rapidity and flexibility. In this study, a wide range of experiments have been carried out on the gold wire-to-nickel thin film joining using the continuous wave fiber laser. In particular, changes in the shape of joint depending on the changes of a target point have been observed.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Rapid Communication in Photoscience
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• 제2권3호
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• pp.79-81
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• 2013

A novel method of fabricating polythiophene-gold nanoparticle composite film electrodes for photoelectric conversion is demonstrated. The method includes electrodeposition of gold and electropolymerization of 2,2'-bithiophene onto an indium-tin-oxide (ITO) electrode. First, electrodeposition of gold onto the ITO electrode was carried out with various repetition times of pulsed applied potential (0.25 s at -2.0 V vs. Ag/AgCl) in an aqueous solution of $HAuCl_4$. Significant progress of the number density of deposited gold nanoparticles was confirmed from scanning electron micrographs, from 4 (1 time) to 25% (15 times). Next, electropolymerization of 2,2'-bithiophene onto the above ITO electrode was performed under controlled charge condition (+1.4 V vs. Ag wire, 15 $mC/cm^2$). Structural characterization of as-fabricated films were carried out by spectroscopic and electron micrographic methods. Photocurrent responses from the sample film electrodes were investigated in the presence of electron acceptors (methyl viologen and oxygen). Photocurrent intensities increased with increasing the density of deposited gold nanoparticles up to ~10%, and tended to decrease above it. It suggests that the surplus gold nanoparticles exhibit quenching effects rather than enhancement effects based on localized electric fields induced by surface plasmon resonance of the deposited gold nanoparticles.

• 한국진공학회지
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• 제17권5호
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• pp.466-472
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• 2008

퍼플골드는 78wt%Au-22wt%Al로 이루어진 합금으로 화학식은 $AuAl_2$로 표현된다. 최근 화이트골드, 핑크골드와 더불어 특유의 적자색 (보라색)이 나는 유색골드의 하나로 장신구나 의장용 소재로 활용되고 있다. 퍼플골드는 Au와 Al의 중간상으로 연성과 주조성이 나쁜 특성이 있어 단조와 주조작업을 통하여 원하는 형상의 퍼플골드를 얻기 힘든 단점이 있다. 따라서 절단과 연마공정만으로 최종제품을 제작하거나 박막으로 증착하여 의장용 소재로 활용하는 것이 가능하다. 본 연구는 순수한 Au와 Al을 소오스로 각각 200nm$SiO_2$/Si기판에 78:22의 무게비로 증착시킨 후 열처리를 시행한 경우와, $AuAl_2$를 용융을 통하여 벌크형으로 얻은 후 이를 소오스로 사용하여 유리기판에 기판온도를 상온으로 유지하면서 진공증착을 통하여 표면처리를 한 경우로 나누어 실험을 진행하였다. 완성된 시편은 육안검사, 미세구조분석, 면저항분석, 색차분석, XRD 분석을 통하여 증착된 퍼플골드의 색과 두께를 위주로 한 물성을 측정하였다. 12.5nmAu/40nmAl/200nm$SiO_2$/Si 구조로 제작하고 열처리 한 경우 과도한 표면응집현상이 일어나면서 퍼플골드가 형성되지 않았다. $AuAl_2$ 소오스로부터 직접 열증착한 경우는 벌크상태와 동일한 적자색을 보였으며 퍼플골드의 의장용으로서 심미적 기능이 가능한 것으로 판단되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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• pp.429-432
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• 1987

A new LOCOS (Local Oxidation of Silicon) process using a thin nitride film directly deposited on the silicon substrate by LPCVD has been developed in order to reduce the bird's beak length. SEM studies showed that nitride thickness of 50nm can decrease the bird's beak length down to 0.2um with 450nm field oxide. No crystalline defects are observed around the bird's beak after the Wright etch. A 30% improvement in current density was obtained when this new method was applied to MOS transistors (W/L*2.9/20.4) compared to conventional LOCOS process (bird's beak length=0.7um). Other various electrical parameters improved by this new simple LOCOS process are reported in this paper.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.598-601
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• 1999

There is currently considerable interest in the applications of conjugated polymers, oligomers and small molecules for thin-film electronic devices. Organic materials have potential advantages to be utilized as semiconductors in field effect transistor and light emitting didoes. In this study, Pentacene thin film transistors(TFTs) were fabricated on glass substrate. Aluminum and Gold wei\ulcorner used fur the gate and source/drain electrodes. Silicon dioxde was deposited as a gate insulator by PECVD and patterned by R.I.E. The semiconductor layer of pentacene was thermally evaporated in vaccum at a pressure of about 10$^{-8}$ Torr and a deposition rate 0.3$\AA$/sec. The fabricated devices exhibited the field-effect mobility as large as 0.07cm$^2$/Vs and on/off current ratio larger than 10$^{7}$

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1011-1015
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• 2002

In this study, Au thin films were etched with a Cl$_2$/Ar gas combination in an inductively coupled plasma. The highest etch rate of the Au thin film was 3500 A/min at a Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in Cl$_2$/Ar plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions[l].

• Journal of Industrial and Engineering Chemistry
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• 제67권
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• pp.417-428
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• 2018

In this study, we fabricated hierarchically self-assembled thin films composed of graphene oxide (GO) sheets and gold nanoparticles (Au NPs) using the Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS) techniques and investigated their gas-sensing performance. First, a thermally oxidized silicon wafer ($Si/SiO_2$) was hydrophobized by depositing the LB films of cadmium arachidate. Thin films of ligand-capped Au NPs and GO sheets of the appropriate size were then sequentially transferred onto the hydrophobic silicon wafer using the LB and the LS techniques, respectively. Several different films were prepared by varying the ligand type, film composition, and surface pressure of the spread monolayer at the air/water interface. Their structures were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM), and their gas-sensing performance for $NH_3$ and $CO_2$ was assessed. The thin films of dodecanethiol-capped Au NPs and medium-sized GO sheets had a better hierarchical structure with higher uniformity and exhibited better gas-sensing performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.380-382
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• 1989

Dielectric breakdown strength (Eb) of thin Poly(Vinylidene Fluoride ; PVDF) film is studied in the temperature range between 4.2 K and 400 K. The results of this study can be summerized as follows. 1) Temperature dependence of dielectric breakdown strength (Eb) can be devided into high and low temperature regions. The critical temperature (Tc) at which two regions are devided depends on applied voltage. 2) Dielectric breakdown strength (Eb) by pulse voltage is higher than that by DC voltage. Especially this difference is remarkable at low temperature.