• Title/Summary/Keyword: Glass Cap

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Machining and Crack Characteristics of the Glass Cap for OELD by Powder Blasting (파우더 블라스팅에 의한 OELD용 유리캡의 가공 및 크랙 특성)

  • Park, Dong-Sam;Kang, Dae-Kyu;Kim, Jeong-Keun;Seong, Enu-Je;Han, Jin-Yong
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.15 no.5
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    • pp.51-58
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    • 2006
  • The old technique of sandblasting which has been used for paint of scale removing, deburring and glass decorating has recently been developed into a powder blasting technique for brittle materials, capable of producing micro structures larger than $100{\mu}m$. Recently, this technique is applied to fabrication of the glass cap for OELD packaging. But, micro crack is generated on the blasted glass, which cause to decrease fracture strength. In this paper, we investigated the effect of blasting parameters on surface characteristics, surface shape and fracture strength of the powder blasted glass surface.

Wafer Level Package Using Glass Cap and Wafer with Groove-Shaped Via (유리 기판과 패인 홈 모양의 홀을 갖는 웨이퍼를 이용한 웨이퍼 레벨 패키지)

  • Lee, Joo-Ho;Park, Hae-Seok;Shin, Jea-Sik;Kwon, Jong-Oh;Shin, Kwang-Jae;Song, In-Sang;Lee, Sang-Hun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.12
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    • pp.2217-2220
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    • 2007
  • In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

Wafer-level Vacuum Packaging of a MEMS Resonator using the Three-layer Bonding Technique (3중 접합 공정에 의한 MEMS 공진기의 웨이퍼레벨 진공 패키징)

  • Yang, Chung Mo;Kim, Hee Yeoun;Park, Jong Cheol;Na, Ye Eun;Kim, Tae Hyun;Noh, Kil Son;Sim, Gap Seop;Kim, Ki Hoon
    • Journal of Sensor Science and Technology
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    • v.29 no.5
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    • pp.354-359
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    • 2020
  • The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

Evaluation of Fracture Toughness Characteristics of Pultruded CFRP Spar-Cap Materials with Non-woven Glass Fabric for Wind Blade (유리섬유 부직포가 삽입된 풍력 블레이드 인발 성형 스파캡 소재의 파괴인성 특성 평가)

  • Young Cheol Kim;Geunsu Joo;Jisang Park;Woo-Kyoung Lee;Min-Gyu Kang;Ji Hoon Kim
    • Journal of Wind Energy
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    • v.14 no.3
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    • pp.83-90
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    • 2023
  • The purpose of this study is to evaluate the inter-laminar fracture toughness characteristics of CFRP pultrusion spar cap materials reinforced with non-woven glass fabric. Test specimens were fabricated by the infusion technique. A non-woven glass fabric and artificial defects were embedded on the middle surface between two pultruded CFRP panels. Double cantilever beam (DCB) and End Notched Flexure (ENF) tests were performed according to ASTM standards. Fracture toughness and crack propagation characteristics were evaluated with load-displacement curves and delamination resistance curves (R-Curve). The fracture toughness results were calculated by compliance calibration (CC) method. The initiation and propagation values of Mode-I critical strain energy release rate value GIc were 1.357 kJ/m2 and 1.397 kJ/m2, respectively, and Mode-II critical strain energy release rate values GIIc were 4.053 kJ/m2 for non-precracked test and 4.547 kJ/m2 for precracked test. It was found that the fracture toughness properties of the CFRP pultrusion spar-cap are influenced by the interface between the layers of CFRP and glass fiber non-woven.

Growth and Characterization of Vertically well Aligned Crbon Nanotubes on Glass Substrate by Plasma Enhanced Hot Filament Chemical Vapor deposition

  • Park, Chong-Yun;Yoo, Ji-Beom
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.210-210
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    • 2000
  • Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

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Study of sand blaster dry etched glass wafer surface for micro device package (샌드 블러스터로 건식 식각한 마이크로 소자 패키지용 유리 웨이퍼의 표면 연구)

  • Kim, Jong-Seok;Nam, Kwang-Woo;Choa, Sung-Hoon;Kwon, Jae-Hong;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.15 no.4
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    • pp.245-250
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    • 2006
  • In this paper, glass cap wafer for MEMS device package is fabricated by using sand blaster dry etcher and Its surface is studied. The surface of dry etched glass is analyzed by using SEM, and many glass particles and micro cracks are observed. If these kind of particles were dropped from glass to the surface of device, It would make critical failure to the operation of device. So, several cleaning and etching methods are induced to remove these kinds of dormant failure mode and optimized condition is found out.

A Comparative Evaluation on the Thermal Insulation Performance of Windows according to the Temporary Improvement Method (창호의 단열성능 간이 개선방법의 비교 분석)

  • Lee, Sung-Jin;Kim, Jeong-Gook;Kim, Jonghun;Jeong, Hakgeun;Lee, Jin-Sook;Jang, Cheol-Yong
    • KIEAE Journal
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    • v.15 no.1
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    • pp.77-82
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    • 2015
  • The purpose of this study is to compare the thermal insulation performance of windows according to the formation of air layer and to evaluate its energy efficiency on a selected standard house. A thermal insulation test, KS F 2278 was used to measure U-values (Heat transmission coefficients) for the following three cases: the first case (Case 1) is a Low-E pair glass (Argon injected), the second case (Case 2) is a Low-E pair glass with the air cap attached on the glass surface, and the third case (Case 3) is a Low-E pair glass, on the frame of which the air cap is attached. The evaluation of the energy efficiency was conducted according to a building energy calculation method from ISO 13790, calculation of energy use for space heating and cooling, using the U-values obtained from the thermal insulation tests. As results of the tests, the U-values of Case 1, Case 2, and Case 3 were $1.668W/m^2{\cdot}K$, $1.568W/m^2{\cdot}K$, and $1.319W/m^2{\cdot}K$ respectively. The Case 2 had about 5.9% lower value than the Case 1, and the Case 3 had about 20.9% lower value than the Case 1. It seems that the thermal performance of the windows is attributed to an increase of the heat resistance and the thickness of air layer. An evaluation of the energy efficiency of the three cases on the selected standard house showed that the amount of heating energy demand per unit area was $7.776kWh/m^2{\cdot}yr$ for the Case $1,6.856kWh/m^2{\cdot}yr$ for the Case 2, and $4.856kWh/m^2{\cdot}yr$ for the Case 3. This study suggests that the formation of air layer (by using air cap) and its thickness should reduce the heat energy demand and thus improve the energy saving efficiency