• Journal of the Korean Applied Science and Technology
• /
• v.20 no.4
• /
• pp.346-352
• /
• 2003

BaTiO$_3$, powders were prepared by sol-gel process from different aging time and reaction temperature. Particle shape, size and crystal structure of prepared $BaTiO_3$ powders were analyzed by SEM, XRD and FT-IR. Effect of aging time alternation didn't particularly show up. Spherical nano-sized $BaTiO_3$ powders were obtained from condition more than reaction temperature $55^{\circ}C$, and obtained sintered $BaTiO_3$ powders of tetragonal phase from heat-treatment at $1,100^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.11
• /
• pp.561-565
• /
• 2004

SiO₂ thin films are fabricated using sol-gel method and dipping method. Gelation time is faster according to increasing the amount of H₂O except H₂O/Si(OC₂H/sub 5/)₄=4. Initial viscosity is highest at H₂O/Si(OC₂H/sub 5/)₄=6. Gelation time is faster according to increasing the amount of CH₃COOH. The relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. The dielectric dissipation factor of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.12
• /
• pp.759-763
• /
• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.31 no.2 s.257
• /
• pp.116-124
• /
• 2007

An adsorption chiller is expected to have high energy-efficiency in utilizing the waste heat exhausted from a process. The objective of this paper is to investigate the performance of silica gel-water adsorption chiller from the cycle simulation and to provide a guideline for design of the adsorption chiller. The effect of cycle time, inlet temperature and water flow rate on the cooling capacity and COP is quantified during the cycle operation. It is found that the performance of adsorption chiller is more sensitive to the change of inlet water temperature rather than the water flow rate. It is concluded that the COP is 0.57 in the standard conditions(hot water $80^{\circ}C$, cooling water $30^{\circ}C$, chilled water inlet temperatures $14^{\circ}C$ and cycle time 420sec).

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1927-1929
• /
• 2005

Colloidal Silica(CS)/methyltrimethoxy silane(MTMS) sol solutions were prepared in variation with synthesizing parameters such as kinds of CS, acidity and reaction time. In order to understand its surface properties, sol-gel coating films on glass were fabricated. The coating film obtained from CS/MTMS sol had stable contact angle and more enhanced flat surface at reaction time of 24 hours. In case of the initial and final period of reaction, the coating films had unstable contact angle and more rough surface. In addition, surface of CS/MTMS sol-gel coating film was more rougher with increasing of acidity.

• Journal of IKEEE
• /
• v.22 no.1
• /
• pp.1-5
• /
• 2018

In this research, sol-gel processed CuO p-type thin film transistors were fabricated with copper (II) acetate monohydrate precursors. After $500^{\circ}C$ annealing process, the deposited thin films were fully converted into CuO. We investigated $UV/O_3$ process time effect on electrical characteristics of sol-gel processed CuO thin film transistors. After 600 sec $UV/O_3$ process, the fabricated CuO thin film transistor delivered field effect mobility in saturation regime of $5{\times}10^{-3}\;cm^2/V{\cdot}s$ and on/off current ratio of ${\sim}10^2$.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.44 no.7
• /
• pp.914-918
• /
• 1995

In this study, Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ (x=0.65, 0.52, 0.35) thin films were fabricated by Sol-Gel method. A stock solution with excess Pb 10[mol%] of Pb(Zr$_{x}$ Ti$_{1-x}$ )O$_{3}$ was made and spin-coated on the Pt/SiO$_{2}$/Si substrate at 4000[rpm] for 30[sec.]. Coated specimens were dried on the hot-plate at 400[.deg. C] for 10[min.]. Sintering temperature and time were 500~800[.deg. C] and 1~60[min.]. The coating process was repeated 6 times and the final thickness of the thin films were about 4800[A]. To investigate crystallization condition, PZT thin films were analyzed with sintering temperature, time and composition by the XRD. The microstructure of thin fulms were investigated by SEM. The ferroelectric perovskite phases precipitated under the sintering of 700[.deg. C] for 1 hours. In the PZT(52/48) composition, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively.ively.

• Textile Coloration and Finishing
• /
• v.21 no.4
• /
• pp.39-45
• /
• 2009

PVA films were crosslinked with dimethylol dihydroxy ethylene urea (DMDHEU) and three polycarboxylic acids of butanetetracarboxylic acid (BTCA), citric acid and malic acid Different factors influencing the crosslinking treatment with BTCA were investigated including BTCA and sodium hypophosphite (SHP) concentration, curing temperature and time. The cured films was extracted with boiling water and gel fraction was calculated based on weight change of the PVA films. The gel fraction of PVA films increased with increasing curing temperature and time. And the resistance to water and thermal stability of the crosslinked PVA films improved with the BTCA crosslinking treatment. While crosslinking with citric acid gave the highest gel fraction among the crosslinkers, crosslinking with malic acid showed the highest absorbancy in 0.9% saline solution, which was attributed to lower crosslink density and high number-average molecular weight between crosslinks. The superabsorbent PVA films could be prepared by adjusting the crosslinking condition of PVA with polycarboxilic acids.

• Electrical & Electronic Materials
• /
• v.9 no.7
• /
• pp.668-673
• /
• 1996

In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

• Journal of the Korean Geotechnical Society
• /
• v.26 no.9
• /
• pp.47-58
• /
• 2010

This paper presents the injection efficiency of 2.0 shot system which was verified by strength and injection time. In order to perform this study, laboratory model tests and field tests are carried out. The laboratory model tests consist of the test of injection time for verifying the injection ratio, and the tests of homo-gel and sand-gel strengths for estimating the characteristic of strength. It is found that the injection ratio of 1:2 shows the best seepage into the ground. The results of the strengths are also larger than other injection ratio. The large strength will also be expressed by field tests at construction site.