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A Study on the Properties of $SiO_2$ Thin Films using Sol-Gel Method  

You Do-Hyun (안산공과대학 전기과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.53, no.11, 2004 , pp. 561-565 More about this Journal
Abstract
SiO₂ thin films are fabricated using sol-gel method and dipping method. Gelation time is faster according to increasing the amount of H₂O except H₂O/Si(OC₂H/sub 5/)₄=4. Initial viscosity is highest at H₂O/Si(OC₂H/sub 5/)₄=6. Gelation time is faster according to increasing the amount of CH₃COOH. The relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. The dielectric dissipation factor of thin films increases a little below 100kHz and it increases rapidly over 100kHz.
Keywords
SiO₂ Thin Films; Sol-Gel Method; Dipping Method; Relative Dielectric Constant; Dielectric Dissipation Factor;
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