• Journal of the Korean Ceramic Society
• /
• v.20 no.2
• /
• pp.99-106
• /
• 1983

This experiment has been carried out for the purpose of investigating the effect of $Ga_2O_3$ and $GeO_2$ additivies on sintering of magnesium oxide over the temperature range of 130$0^{\circ}C$~150$0^{\circ}C$. The effect of calcining temperature on the bulk densities of fired compacts prepared from this material was observed MgO powder has been obtained by calcining extra reagent grade magnesium carbonate(basic fired) at 90$0^{\circ}C$ for 30 minutes $Ga_2O_3$and GeO2 were added in the ratio of 1, 2, and 3 wt% to MgO and mixed with calcined MgO. The specimens were prepared by compression with pressure of $700kg/cm^2$ than fired at 130$0^{\circ}C$~150$0^{\circ}C$ for 0-5hrs. Sintering behaviour and microstructure of the fired specimens were examined. The optimum calcination temperature of magnesium carbonate was 90$0^{\circ}C$. Densification rates obeyed the equation D=K in t+c. Theoretical density in the case of addition of $Ga_2O_3$ was 23.1 kcal/mole in the case of the additive $GeO_2$ was 14.176kcal/mole. This low value would appear to support a machanism of grain boundatry diffusion The range of average grain size in the case of addition of $Ga_2O_3$ and $GeO_2$ was 21$\mu\textrm{m}$-31$\mu\textrm{m}$.

• Korean Journal of Materials Research
• /
• v.4 no.4
• /
• pp.416-427
• /
• 1994

The changes of crystallinity and microstructure and the $Si_{1-x}Ge_x/Sio_2$ interfaces of $Si_{1-x}Ge_x$ alloys deposited on amorphous $SiO_{2}$ were studied as a function of deposition temperature. The crystallinity, microstructure, and compositional uniformity of $Si_{1-x}Ge_x$ alloys deposited on the SiOl at different temperature were investigated by X-ray diffraction and transmission electron microscopy. And $Si_{1-x}Ge_x/Sio_2$ interface were investigated by high-resolution transmission electron microscopy. The $Si_{0.7}Ge_{0.3}/Sio_2$ films were deposited on amorphous $SiO_{2}$ at $300^{\circ}C,400^{\circ}C,500^{\circ}C,600^{\circ}C,$ and $700^{\circ}C$ by Si-MBE. In the film deposited at $300^{\circ}C$, only amorphous phase were observed. In the film deposited at $400^{\circ}C$, both amorphous and polycrystalline films were observed. Both phases were deposited simultaneously, but, at initial film growth, amorphous phase prevailed over polycrystalline phase. As the film thickness increased, the fraction of polycrystalline phase increased. At $500^{\circ}C$, thin amorphous layer was observed at lOnm from $SiO_{2}$ surface. In the films deposited at higher than $600^{\circ}C$, only crystalline phase were observed. Polycrystalline films had columnar structure. Compositional uniformity for deposited films were good regardless of deposition temperature. The interfaces of $Si_{1-x}Ge_x/Sio_2$ were flat, whatever polycrystal or amorphous was deposited on $SiO_{2}$.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.29 no.5
• /
• pp.208-214
• /
• 2019

The glass of $BaO-GeO_2-La_2O_3-ZnO$ system with a transmittance of more than 75 % at mid-wave infrared (MWIR) region in the range of $3{\mu}m$ to $5{\mu}m$ is manufactured and its property is evaluated. After selecting construction that can melt glass through flow button test, $BaO-GeO_2-La_2O_3$ system where 10 mol%, 20 mol% of ZnO were added respectively were melted at $1350^{\circ}C$ for 1 hour and $BaO-GeO_2-La_2O_3$ system of glass was manufactured. Among them, with 20 mol% of ZnO, 16 mol% BaO-56 mol% $GeO_2-8mol%$ $La_2O_3-16mol%$ ZnO system of glass was found to has less than $660^{\circ}C$ of glass transition temperature, more than 1.70 of refractive index, and more than 530 of knoop hardness. Therefore, it is concluded that glass of $BaO-GeO_2-La_2O_3-ZnO$ system of glass with 20 mol% ZnO has good melting conditions at low temperatures and excellent optical properties, thus, can be utilized for special optical materials field.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.5
• /
• pp.876-884
• /
• 2017

The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

• Journal of Acupuncture Research
• /
• v.19 no.4
• /
• pp.190-199
• /
• 2002

Objective : This study was performed to determine if Scutellaria balicalensis Georgi extract (SbGE) prevents oxidant-induced membrane transport dysfunction in renal tubular cells. Methods : Membrane transport function was estimated by measuring $Na^+$-dependent inorganic phosphate transport in opossum kidney (OK) cells. $H_2O_2$ inhibited phosphate transport in a dose-dependent manner. Results : The inhibitory effect of $H_2O_2$ was significantly prevented SbGE over concentration range of 0.005-0.05%. $H_2O_2$ caused ATP depletion, which was prevented by SbGE. $H_2O_2$ induced the loss of mitochondrial function as evidenced by decreased MTT reduction and its effect was prevented by SbGE. The $H_2O_2$-induced inhibition of phosphate transport was not affected by a potent antioxidant DPPD, but the inhibition was prevented by an iron chelator deferoxamine, suggesting that $H_2O_2$ inhibits $Na^+$-dependent phosphate transport via an iron-dependent nonperoxidative mechanism in renal tubular cells. Conclusion : These data suggest that SbGE may exert the protective effect against oxidant-induced membrane transport dysfunction by a mechanism similar to iron chelators in renal epithelial cells. However, furher studies should be carried out to find the active ingredient(s) of SbGE that exerts the protective effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.147-148
• /
• 2006

Ge nanocrystals(NCs)-embedded MOS capacitors are charactenzed in this work using capacitance-voltage measurement. High-k dielectrics $HfO_2$ are employed for the gate material m the MOS capacitors, and the C-V curves obtained from $O_2-$ and $NH_3$-annealed $HfO_2$ films are analyzed.

• Korean Journal of Materials Research
• /
• v.7 no.10
• /
• pp.845-850
• /
• 1997

수직형 FHD증착법을 사용하여 SiO$_{2}$, SiO$_{2}$-P$_{2}$O$_{5}$, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 실리카 유리미립자를 형성하였으며, SEM, ICP-AES, XRD, TGA-DSC을 사용하여 그 특성을 분석하였다. XRD측정을 통해, 미립자 형성시 사용된 화염온도(130$0^{\circ}C$-150$0^{\circ}C$)와 기판온도(-20$0^{\circ}C$)가 SiO$_{2}$-P$_{2}$O$_{5}$계 미립자를 비정질상태로 형성하였으며, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$와 SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 미립자에서는 B$_{2}$O$_{3}$, BPO$_{4}$, GeO$_{2}$의 결정성피크들을 관찰하였다. TGA-DSC 열분석을 통해, SiO$_{2}$와 SiO$_{2}$-P$_{2}$O$_{5}$는 온도변화에 따른 질량변화가 없었으며, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계의 경우 질량감소를 동반한 유리전이에 따른 분자이완현상 및 결정화나 회복반응을 나타내고 있다. 질량감소는 미립자가 결정상태일때 가속되는 경향을 나타냈으며, DSC열분석을 통해 SiO$_{2}$, SiO$_{2}$-P$_{2}$O$_{5}$, SiO$_{2}$P$_{2}$O$_{5}$-B$_{2}$O$_{3}$-GeO$_{2}$계 유리미립자들의 고밀화가 시작되는 온도를 각각 1224$^{\circ}C$, 1151$^{\circ}C$, 953$^{\circ}C$, 113$0^{\circ}C$에서 관찰하였다.

• Analytical Science and Technology
• /
• v.8 no.3
• /
• pp.371-374
• /
• 1995

An organic germanium compound, Ge-132, was reported to have interferon inducer activity, anti-tumor activity and anti-viral activity. ICP, AA and colorimetry methods were used for the determination of germanium in Ge-132. However these methods have a problem that they only give an information on the total amount of germanium element, and consequently Ge-132 connot be distinguished form toxic inorganic Ge compounds. To overcome this problem, ion chromatography was used to analyze Ge-132. Ge-132 was separated on Ionpac AS4A column with 1.3mM $Na_2B_4O_7$ buffer(pH=9.2) solution as an eluent and detected by the conductivity detector. Correlation coefficient of the calibration curve was 0.999 and the detection limit measured at S/N ratio of 3 was 50pmol. This method was applicable to the analysis of Ge-132 raw material and Ge-132 preparations.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.4
• /
• pp.483-491
• /
• 2017

The interdigitated germanium (Ge) meta-lsemiconductor-metal (MSM) photodetectors (PDs) with and without an $SiO_2$ anti-reflection (AR) layer was fabricated, and the effect of $SiO_2$ AR layer on their optoelectronic response properties were investigated in detail. The lowest reflectance of 15.6% at the wavelength of 1550 nm was obtained with a $SiO_2$ AR layer with a thickness of 260 nm, which was in a good agreement with theoretically calculated film thickness for minimizing the reflection of Ge surface. The Ge MSM PD with 260 nm-thick $SiO_2$ AR layer exhibited enhanced device performance with the maximum values of responsivity of 0.65 A/W, the quantum efficiency of 52.2%, and the detectivity of $2.49{\times}10^9cm\;Hz^{0.5}W^{-1}$ under the light illumination with a wavelength of 1550 nm. Moreover, time-dependent switching analysis of Ge MSM PD with 260 nm- thick $SiO_2$ AR layer showed highest on/off ratio with excellent stability and reproducibility. All this investigation implies that 260 nm-thick $SiO_2$ AR layer, which is effective in the reduction in the reflection of Ge surface, has a great potential for Ge based optoelectronic devices.

• Journal of the Korean Ceramic Society
• /
• v.37 no.8
• /
• pp.787-791
• /
• 2000

Samples with the nominal composition, Bi2-xGexSr2CaCu2O8＋$\delta$ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) were prepared by the solid-state reaction method. We have studied the effect of substitution Ge for Bi and investigated the superconducting properties by changing oxygen content with Ge substitution. It was found that temperature difference, ΔK, between TCon and TCzero was considerably smaller in the samples prepared by the intermediate pressing method than that in the samples by the solid-state reaction method. We found the solubility limit of Ge to the 80 K single phase was around x=0.3. Within the solubility limit, lattice constant c decreased with the increase of x. In the region of the 80K single phase, the onset critical temperature TCon increased and excess oxygen content decreased with increase of x.