• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2000.11a
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• pp.11-12
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• 2000

Non-stoichiometric ceramics of $Ni_{x}ZnO_{1-x}Fe_{2}O_{4}$ were prepared by self-propagating high temperature synthesis reaction with various processing conditions and their stoichometric numbers were determined by neutron diffraction. The neutron diffraction patterns were measured at room temperature using monochromatic neutrons with a wave length of 0.18339 nm from a Ge(331) mocochromator at a 90 degree take off angle. The Rietveld refinement of each pattern converged to good agreement (x2=1.88-2.24). The neutron diffraction analysis revealed the final stoichiometries of the ferrites were $Ni_{0.38}Zn_{0.62}Fe_{2}O_{4}$ and $Ni_{0.33}Zn_{0.67}Fe_{2}O_{4]$, respectively. This supports that final stoichiometric number of the self-propagating high temperature synthesis product can be controlled by the processing parameters during the combustion reaction.

• Journal of the Korean Mathematical Society
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• v.44 no.4
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• pp.809-822
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• 2007

Certain weak type endpoint estimates are established for maximal commutators generated by $Calder\acute{o}n-Zygmund$ operators and $Osc_{exp}L^{\gamma}({\mu})$ functions for ${\gamma}{\ge}1$ under the condition that the underlying measure only satisfies some growth condition, where the kernels of $Calder\acute{o}n-Zygmund$ operators only satisfy the standard size condition and some $H\ddot{o}rmander$ type regularity condition, and $Osc_{exp}L^{\gamma}({\mu})$ are the spaces of Orlicz type satisfying that $Osc_{exp}L^{\gamma}({\mu})$ = RBMO(${\mu}$) if ${\gamma}$ = 1 and $Osc_{exp}L^{\gamma}({\mu}){\subset}RBMO({\mu})$ if ${\gamma}$ > 1.

• Applied Biological Chemistry
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• v.49 no.1
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• pp.55-59
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• 2006

This study was designed to investigate the optimum manufacturing condition of germanium-fortified yeast, and the binding properties of germanium (Ge) in germanium-fortified yeast. The nutritional optimum conditions were glucose 3.0 (w/v) %, yeast extracts 0.3 (w/v) % and peptone 0.5 (w/v) %, and the amounts of yeast cells were 67.4 mg/ml. And, the standard germanium-fortified yeast was produced under the condition at the ratio of yeast cell and germanium solution was 1 : 0.5 (50%), pH 6.5 and $35-40^{\circ}C$ during fermentation. In results of the identification, binding of germanium-protein showed structural difference between the inorganic Ge $(GeO_2)$ added during fermentation process and germanium-fortified yeast. Therefore, germanium-fortified yeast made by biosynthetic technology formed structurally safe organic germanium during fermentation process. Germanium-fortified yeast can be applied as a new functional material far the improvement of health, the prevention and treatment of chronic degenerative disease like cancer, and the enforcement of immune system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.9-17
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• 1998

The dependence of the ionic conductivity on the B-site ion substitution in (Li0.5La0.5)Ti1-xMxO3 (M=Sn, Zr, Mn, Ge) system has been studied. Same valence state and various electronic configuration and ionic radius of Sn4+, Zr4+, Mn4+ and Ge4+(4d10(0.69$\AA$), 4p6(0.72$\AA$), 3d10(0.54$\AA$) and 3d3(0.54$\AA$), respectively) induced the various crystallographic variaton with substitutions. So it was possibleto investigate the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic factor which influence the ionic conduction by observing the dependence of the conductivity on the crystallographic variations. We found that the conductivity increased with decreasing the radii of B-site ions or vice versa and octahedron distortion disturb the ion conduction. The reason for this reciprocal proportion of conductivity on the radius of B-site ions has been examined on the base of the interatomic bond strength change due to the cation substitutions. The results were good in agreement with the experimental results. Therefore it could be concluded that the interatomic bond strength change due to the cation substitutions may be the one of major factors influencing the lithium ion conductivity in perovskite(Li0.5La0.5) TiO3system.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2214-2218
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• 2007

The effects of bath temperature on electrochemical behavior, alloy composition, crystallographic structure, morphology and the magnetic properties of electrodeposited Co-Pt-W(P) films were investigated. Electrochemical studies show that alloy electrodeposition has been shifted to more positive potentials and the critical time for nucleation decreased as electrolyte temperature increased. As the temperature increased from 40 oC to 80 oC, tungsten content in the deposit increased, while phosphorus content decreased. The films deposited at T = 40 oC exhibited soft magnetic properties. However, electrodeposited at T = 70 oC, the films exhibited hard magnetic properties. It is also demonstrated that higher temperature more than 70 oC could weaken hard magnetic properties. XRD results indicated that the deposits obtained at 50 oC-70 oC showed enhancement of [00.1] P.O. (preferred orientation) with the bath temperature, which resulted in the stronger perpendicular magnetic anisotropy.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.104-104
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• 1999

Cerium dioxide 박막의 포토루미네슨에 관해서는 Cerium 4f band에서 oxygen 2p band로의 transition에 의한 발광(400nm) 현상이 보고되었다. 또한 Indium Oxide 박막의 발광(637nm0 현상이 보고되었다. 본 연구에서는 3족인 Indium을 Si/In/CeO2/Si 구조와 CeO2/Si 구조에 도핑하여 포토루미네슨스 현상을 관찰하였다. E-beam evaporator를 사용하여 Silicon(111) 기판에 Cerium dioxcide 박막을 성장시킨 경우의 두가지 시료를 분석하였다. 포토루미네슨스 관찰을 위해서 Ge-Cd laser (325nm)가 사용되었으며 Indium의 도핑양과 분포 상태를 알기 위해 SIMS와 ADP를 이용하여 분석하였다. Indium양에 대한 포토루미네슨스 변화와 열처리 후의 indium의 분포의 변화에 의한 포토루미네슨스 변화를 관찰하였다. 상온에서 In/CeO2/Si 시료와 Si/In/CeO2/Si 시료에 대한 포토루미네슨스 현상을 관찰한 결과 Si/In/CeO2/Si 시료에서만 500nm(2.5eV)에서 발광 현상이 관찰되었다. 도핑된 indium은 ADP에서는 검출되지 않고 SIMS에서만 검출되어 ADP의 detection range(1-0.1%) 이하의 양이 도핑된 것으로 추측된다. 도핑된 Indium의 양이 증가할수록 포토루미네슨스의 Intensity가 증가하였다. 또한 열처리(110$0^{\circ}C$, 1min) 후 포토루미네슨스의 peak위치가 390nm(3.18eV)로 변화하였다. Si/In/CeO2/Si에서 포토루미네슨스 현상이 관측되고 Intensity가 indium의 양에 의존하므로 완전하지 못한 Cerium dioxide의 CeOx 구조와 indium과의 결합이 포토루미네슨스의 원인으로 추측된다. 열처리 후 SIMS의 분석결과 indium의 분포가 변화하였으며 이는 포토루미네슨스의 변화의 원인으로 판단된다.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1181-1184
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• 2008

$GeO_2$/ormosil organic-inorganic hybrid films doped with neodymium ions and $TiO_2$/Ormosil organic-inorganic hybrid films dispersed with neodymium oxide nanocrystals are prepared by combining an inverse microemulsion technique and a low-temperature sol-gel technique. The effects of $Nd^{3+}$ concentration, $Nd_2O_3$ nanocrystal content, and heat treatment temperature on up-conversion and photoluminescence luminescence properties of the hybrid films are studied.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.214-215
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• 2000

As silica based optical fibers and preforms are processed at a high temperature, residual stresses are bulit in the strucure when cooled down to the room temperature. The magnitude of the residual stress depends on the difference in the thermal expansion coefficients between core and cladding glass as well as on the temperature difference. Residual stress distribution determines the intrinsic strength and could affect the long term reliability of optical fibers. And furthermore, stress can introduces anisotropy into optical fibers by photoelastic effects. The analysis of thermal stress has been intensively studied for multimode fibers$^{(1)}$ and the authors and co-wokers recently reported the stress distribution in a depressed inner cladding structure$^{(2)}$ . The compositions of the glass in the previous studies, however, have been restricted to conventional glass formers, such as GeO2, B2O3, P2O5, Fluorine. (omitted)

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.