• 제목/요약/키워드: GeO$_2$

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Dependency of Phonon-limited Electron Mobility on Si Thickness in Strained SGOI (Silicon Germanium on Insulator) n-MOSFET (Strained SGOI n-MOSFET에서의 phonon-limited전자이동도의 Si두께 의존성)

  • Shim Tae-Hun;Park Jea-Gun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.9 s.339
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    • pp.9-18
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    • 2005
  • To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

Preparation of Organic Germanium by Yeast Cell (효모를 이용한 유기게르마늄의 제조)

  • 송원종;이상철;오태광
    • Microbiology and Biotechnology Letters
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    • v.23 no.1
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    • pp.87-90
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    • 1995
  • A process of organically bound germanium preparation was developed for healthy food using inorganic germanium adapted Saccharomyces cerevisiae. Adaptations of Saccharomyces cerevisiae against inorganic germanium were successively carried out through stepwise increase of GeO$_{2}$ concentration in order to produce high quantities of germanium bound yeast. Productivity of yeast and quantities of germanium in yeast were obtained 70.2 g/l and 9780 ppm, repectively, when adapted yeast and fed batch culture were used. Germanium taken-up yeast is to be organically bound germanium by evidence of no difference of germanium content after dialysis.

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ON (p, k )-QUASIPOSINORMAL OPERATORS

  • Lee, Mi-Young;Lee, Sang-Hun
    • Journal of applied mathematics & informatics
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    • v.19 no.1_2
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    • pp.573-578
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    • 2005
  • For a positive integer k and a positive number 0 < p$\le$1, an operator T is said to be (p, k)-quasiposinormal if $T^{{\ast}k}(c^2(T^{\ast}T)P - (TT^{\ast})^P)T^k {\ge} 0$ for some c > o. In this paper we consider a structure for (p, k)-quasiposinormal.

III-V 화합물 반도체 Interface Passivation Layer의 원자층 식각에 관한 연구

  • Gang, Seung-Hyeon;Min, Gyeong-Seok;Kim, Jong-Gyu;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.198-198
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    • 2013
  • Metal-Oxide-Semiconductor (MOS)에서 사용되는 다양한 channel materials로 high electron mobility을 가지는 III-V compound semiconductor가 대두되고 있다 [1,2]. 하지만 이러한 III-V compound semiconductor는 Si에 비해 안정적인 native oxide가 부족하기 때문에 Si, Ge, Al2O3과 BeO 등과 같은 다양한 물질들의 interface passivation layers (IPLs)에 대한 연구가 많이 되고 있다. 이러한 IPLs 물질은 0.5~1.0 nm의 매우 얇은 physical thickness를 가지고 있고 또한 chemical inert하기 때문에 플라즈마 식각에 대한 연구가 되고 있지만 IPLs 식각 후 기판인 III-V compound semiconductor에 physical damage과 substrate recess를 줄이기 위해서 높은 선택비가 필요하다. 이러한 식각의 대안으로 원자층 식각이 연구되고 있으며 이러한 원자층 식각은 반응성 있는 BCl3의 adsorption과 low energy의 Ar bombardment로 desorption으로 self-limited한 one monolayer 식각을 가능하게 한다. 그러므로 본 연구에서는, III-V compound semiconductor 위에 IPLs의 adsorption과 desorption의 cyclic process를 이용한 원자층식각으로 다양한 물질인 SiO2, Al2O3 (self-limited one monolayer etch rate=about 1 ${\AA}$/cycle), BeO (self-limited one monolayer etch rate=about 0.75 ${\AA}$/cycle)를 얻었으며 그 결과 precise한 etch depth control로 minimal substrate recess 식각을 할 수 있었다.

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Effect of Rice Straw Heated in Water or 0.25N-NaClO$_2$ on the Nutrient Utilization of Diets in Chicks (증류수 혹은 0.25N NaClO$_2$에서 가열한 볏짚의 가금에서의 영양소이용성에 미치는 영향)

  • 고태송;김해수;김성규;라채영
    • Korean Journal of Poultry Science
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    • v.12 no.1
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    • pp.25-30
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    • 1985
  • In order to observe an effect of the components of rice straw on the utilization of nutrient in chicks, the rice straw of 100g were digested in 800$m\ell$ of distilled water or 0.25N NaClO$_2$ at 135 C and in the pressure of 3.2kg/$\textrm{cm}^2$ by autoclave during 30, 60 and 120 minutes (water or NaClO$_2$-30, 60 and 120- RS). The contents of neutral detergent fiber(NDF), acid detergent fiber (ADF) and lignin were analysed in the washed and dried rice straw meal. Hatched single comb white Leghorn male chicks were fed with a commercial chick mash for the first 10 days and five kinds of experimetal diets for the next 8 days which contained 17.0% of wheat bran (basal), cellulose(cotton meal), nontreated RS, water-30-RS and NaClO$_2$ 30-RS, respectively. The water-30, 60 and 120-RS baa leased 9.7, 12.1 and 13.3% of dry matter, respectively, while NaClO$_2$-30-RS had similar contents of dry matter loss with those of water-30-RS, and NaClO$_2$-60 and 120-RS had tossed 1.5 times of dry matter comparing with those of water-60 and 120-RS, respectively. And the dry matter loss of the water-RS or NaClO$_2$-RS was mainly originated front the extractable cell contents and hemicellulose of the non-treated RS. Birds fed water-30-RS diets had higher body weight gain and lower feed conversion than those of birds fed non-treated and NaClO$_2$-30-RS diets during 8 days of experimental feeding. Also nitrogen balance and retention rate of birds fed water -30-RS was higher comparing with those of birds non-treated and NaClO$_2$-30-RS. And digestibility of crude fat had been shown a highering trend in birds water-30-RS. The rate of metabolizable energy (MEn) to gross energy (GE) of birds fed non-treated RS, water-30-RS and NaClO$_2$30-RS diets were 71.9, 72.9 and 70.4%, respectively, and energy intake per metaboic body size (kg 0.75) were reached to 307.3, 296.2 and 291.4 kcal per day, respectively. And daily protein retention per kg 0.75 were 1.647, 1.969 and 1.560g, respectively. Then 30.56kcal of MEn required for 1 g of protein retention in birds fed water-30-RS, which was lower thu 36.90 and 37.56 kcal of birds fed non-treated and NaClO$_2$-30- RS, respectively. The results seems to indicate that non-treated rice straw had a substance or characters which affect the energy unilization or protein retention of diets and which will be eliminated by boiling in water.

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Study on Identification and Purification of Germanium-fortified Yeast (게르마늄강화효모의 게르마늄결합 단백질의 분리 및 확인에 관한 연구)

  • Lee, Sung-Hee;Lee, Sang-Kwang;Lee, Hyun-Joo;Yi, Yong-Sub;Park, Eun-Woo
    • Applied Biological Chemistry
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    • v.49 no.1
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    • pp.55-59
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    • 2006
  • This study was designed to investigate the optimum manufacturing condition of germanium-fortified yeast, and the binding properties of germanium (Ge) in germanium-fortified yeast. The nutritional optimum conditions were glucose 3.0 (w/v) %, yeast extracts 0.3 (w/v) % and peptone 0.5 (w/v) %, and the amounts of yeast cells were 67.4 mg/ml. And, the standard germanium-fortified yeast was produced under the condition at the ratio of yeast cell and germanium solution was 1 : 0.5 (50%), pH 6.5 and $35-40^{\circ}C$ during fermentation. In results of the identification, binding of germanium-protein showed structural difference between the inorganic Ge $(GeO_2)$ added during fermentation process and germanium-fortified yeast. Therefore, germanium-fortified yeast made by biosynthetic technology formed structurally safe organic germanium during fermentation process. Germanium-fortified yeast can be applied as a new functional material far the improvement of health, the prevention and treatment of chronic degenerative disease like cancer, and the enforcement of immune system.

Development of Frequency Weighing Sensor and Single Crystal Growth (새로운 무게센서 재발과 단결정성장(1))

  • Jang Y.N.;Sung N.H.;Chae S.C.;Bae I.K.;Kim I.J.
    • Korean Journal of Crystallography
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    • v.8 no.1
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    • pp.38-47
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    • 1997
  • A new weighing sensor for the automatic diameter control system of the crystal growth is developed in this study. This weighing sensor measures the frequency of the vibrating element which is lineally changing with respect to weight. The signal and the power of this system are transmitted without any physical contact, so that this sensor offers high accuracy and resolution. This system consists of a string, a sinusoidal wave generator, an automatic amplification adjusting circuit, signal transformers and a PCB. 4 kinds of programs are developed for checking DAC, weight calibration and controlling growth process. The measurements of the standard deviation and the resolution show $\pm0.10g$(measured at every second) and $5{\times}10^{-5}$, respectively, This weighing sensor is effective under high pres-sure of 200 atm, high temperature and vacuum condition. The weighing system can control the temperature in the accuracy of $\pm0.025^{\circ}C$ with the 'signal divider'. The optical quality single crystals of $(YGd)_3Sc_2Ga_3O_{12},\;Er-Y_3Sc_2Al_3O_{12},\;and\;Bi_{12}GeO_{20}$ have been grown by Czo-chralski method using this auto-diameter control system.

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The Study of Silica Surface Reaction with Fluorocarbon Plasma Using Inductively Coupled Plasma (Inductively Coupled Plasma에 의한 fluorocarbon 가스 플라즈마의 실리카 표면 반응 연구)

  • Park, Sang-Ho;Shin, Jang-Uk;Jung, Myung-Young;Choy, Tae-Goo;Kwon, Kwang-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.6
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    • pp.472-476
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    • 1998
  • The surface reactions of silica film($SiO_2-P_2O_5-B_2O_3-GeO_2$) with fluorocarbon plasma has been studied by using angle -resolved x-ray photoelectron spectroscopy(XPS). It has been confirmed that residual carbon consists of C-C and C-CFx bonds and fluorine mainly binds silicon in the case of etched silica by using $CF_4$ gas plasma. The surface reaction of silica with various fluorocarbon gases, such as $CF_4,C_2F_6 and CHF_3$ were investigated. XPS results showed that though the etching gases were changed, the elements and binding states of the residual layers on the etched silica by using various fluorocarbon gas plasma were nearly the same . This seems to be due to the high volatility of byproducts, that is, $SiF_4 and CO_2$ etc..

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Stabilization of Abnormal Combustion of Dry Low NOx Gas Turbine Combustor for Power Generation (발전용 저 NOx 가스터빈의 연소 불안정 안정화에 관한 연구)

  • 정재모;안달홍;박정규
    • Journal of Energy Engineering
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    • v.13 no.2
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    • pp.144-151
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    • 2004
  • Stabilization and reduction of combustion noise and NOx emission from dry low NOx combustor of GE MS7001F gas turbine were achieved. Dry low NOx gas turbines that adopt the lean premixed combustion technology frequently generate the flame instability and high NOx emissions if not adequately tuned. Dynamic pressure oscillation during the combustion mode transfer increased as ambient temperature decreased with frequency of 80㎐ and magnitude of 4-9 psi. Effects of both combustor tuning for uniform fuel flow with burner nozzles and fuel pre-filling into transfer fuel valves on stabilisation of the dry low NOx combustor were very significant. Dynamic pressure oscillation during the combustion mode change was decreased up to 2.5 psi. Also, NOx emission from GE7F DLN-1 combustor can be maintained as low as 35-43ppm (15% O$_2$) in base load operation of 150 MW.

Diagnosis of Graft-Versus-Host Disease after Bone Marrow Transplantation by in vivo Proton MR Spectroscopy of the Liver: Correlation with Pathologic Results

  • Cho, Soon-Gu;Lee, Moon-Hee;Suh, Chang-Hae
    • Proceedings of the KSMRM Conference
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    • 2001.11a
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    • pp.135-135
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    • 2001
  • Purpose: To know the differences of the proton MR spectroscopic features of the liver between th patients with graft-versus-host disease (GVHD) and without GVHD (non-GVHD) after to marrow transplantation (BMT), and to evaluate the possibility to discriminate GVHD fro non-GVHD by analysis of the in vivo proton MR spectra. Method: We evaluated the in vivo proton MR spectra from the livers of 37 patients wh underwent BMT. Our series included 14 cases with GVHD and 23 without GVHD in the liver. Nineteen men and 18 women were included in our series. All cases of GVHD and 2 o non-GVHD were confirmed by liver biopsy and remaining of non-GVHD by evaluation clinical follow up. Proton MR spectroscopy (1H-MRS) was performed at 1.5T GE Sign Horizon (GE Medical System, Milwaukee, USA) system using localized proton STEAM sequence and body coil in all cases with subjects were located in supine position. N respiratory interruption was required during the spectroscopic signal acquisition. Paramete using in MRS were: TR = over 3000ms, TE = 30ms, number of scans = 128, voxel size = ($2{\times}2{\times}2$)$cm^3$, and one NEX. We evaluated the spectra with an attention to the differences o patterns of the peaks between GVHD and non-GVHD groups. The ratio of peak area of peaks at 1.6-4.1ppm to lipid (0.9-1.6ppm) [P(1.6-4.1ppm)/P(0.9-1.6ppm)] was calculated in GVHD and non-GVHD group, and compared the results between these groups. We als evaluated the sensitivity and specificity for discriminating GVHD from non-GVHD by anal of 1H-MRS.

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