• Journal of applied mathematics & informatics
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• v.18 no.1_2
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• pp.497-503
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• 2005

This paper presents characterizations on the independence of the exponential and Pareto distributions by record values. Let ${X_{n},\;n {\ge1}$ be a sequence of independent and identically distributed(i.i.d) random variables with a continuous cumulative distribution function(cdf) F(x) and probability density function(pdf) f(x). $Let{\;}Y_{n} = max{X_1, X_2, \ldots, X_n}$ for n \ge 1. We say $X_{j}$ is an upper record value of ${X_{n},{\;}n\ge 1}, if Y_{j} > Y_{j-1}, j > 1$. The indices at which the upper record values occur are given by the record times {u(n)}, n \ge 1, where u(n) = $min{j|j > u(n-1), X_{j} > X_{u(n-1)}, n \ge 2}$ and u(l) = 1. Then F(x) = $1 - e^{-\frac{x}{a}}$, x > 0, ${\sigma} > 0$ if and only if $\frac {X_u(_n)}{X_u(_{n+1})} and X_u(_{n+1}), n \ge 1$, are independent. Also F(x) = $1 - x^{-\theta}, x > 1, {\theta} > 0$ if and only if $\frac {X_u(_{n+1})}{X_u(_n)}{\;}and{\;} X_{u(n)},{\;} n {\ge} 1$, are independent.

• Journal of Magnetics
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• v.18 no.4
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• pp.405-411
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• 2013

The structural, magnetic and magnetocaloric properties of $CoMn_{1-x}Cr_xGe$ (x=0.05-0.125) have been investigated by using electron microscopy, x-ray diffraction, calorimetric and magnetic measurements. In this study, our aim is to justify the magnetocaloric effect by tuning the structural and magnetic transition temperature with Cr doping on CoMnGe pure system. The substitution of Cr for Mn leads to a decrease of both structural and magnetic transition temperatures. However, structural and magnetic transition temperatures do not close to each other. From magnetization measurement, we calculate that isothermal entropy change associated with magnetic transition can be as high as 3.82 J $kg^{-1}K^{-1}$ at 302 K in a field of 7 T. Meanwhile, structural phase transition contribution to isothermal entropy change is calculated as 5.85 J $kg^{-1}K^{-1}$ at 322 K for 7 T.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.276-283
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• 2003

In this paper, a 2-stage power amplifier(PA) for IMT-2000 handset has been designed and fabricated using SiGe HBT, which has excellent frequency characteristics and linearity, to reduce size and weight instead of existing linearization techniques. DC I-V characteristics and S-parameter of SiGe HBT were simulated by Agilent circuit simulator(ADS), with large signal Gummel-Poon nonlinear circuit model. Then the output and interstage matching circuits were designed to satisfy the high power condition and the high gain condition, respectively. The experimental results showed output power of 27.1dBm and ACLR of 20dB, PAE of 34%, and linear power gain of 18.9dB over frequency ranges from 1920MHz to 1980MHz.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• Product Safety
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• s.28
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• pp.18-22
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• 1994

• Nuclear industry
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• v.7 no.1 s.47
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• pp.18-21
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• 1987

• Bulletin of the Korean Mathematical Society
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• v.18 no.1
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• pp.15-16
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• 1981

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.84-87
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• 2002

The Si$_{1-x}$ Gex/Si surface alloy (x = 0.3, 0.4 and 0.5), which are prepared by solid source MBE and have the SiGe epilayer thickness of 50$\AA$, are annealed with different parameters. The surface structure analyses of the heterostructure samples are made on a triple-axis X-ray diffractometer in grazing incidence X-ray diffraction (GIXRD) geometry. It has been found that with different annealing time (1.5h, 18h, 64h) and annealing temperature (550 $^{\circ}C$, 750 $^{\circ}C$), the SiGe epilayer experienced different strain relaxation process, which was deduced from the GIXRD measurements of the in-plane (220) diffraction peak of Si(001) substrate and the relevant (220) surface diffraction of SiGe epilayer. The results show that the stress relieving and the lateral strain relaxation in the SiGe/Si heterostructure can be promoted by correct annealing, which is very helpful for the preparation of SiGe/Si strained superlattice with fine strain crystallization..

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.630-634
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• 2004

This paper describes the design of a two stage 1V power supply SiGe Low Noise Amplifier operating at 5.25 GHa for 802.lla wireless LAN application. The achieved performance includes a gain of 17 ㏈, noise figure of 2.7㏈, reflection coefficient of 15 ㏈, IIP3 of -5 ㏈m, and 1-㏈ compression point of -14㏈m. The total power consumption of the circuit was 7 mW including 0.5mW for the bias circuit.