Browse > Article

Design and fabrication of Power Amplifier with HBT for IMT-2000 Handsets  

정동영 ((주)Phill-IT)
박상완 ((주)Phill-IT)
정봉식 ((주)GT 텔레콤)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.7, no.2, 2003 , pp. 276-283 More about this Journal
Abstract
In this paper, a 2-stage power amplifier(PA) for IMT-2000 handset has been designed and fabricated using SiGe HBT, which has excellent frequency characteristics and linearity, to reduce size and weight instead of existing linearization techniques. DC I-V characteristics and S-parameter of SiGe HBT were simulated by Agilent circuit simulator(ADS), with large signal Gummel-Poon nonlinear circuit model. Then the output and interstage matching circuits were designed to satisfy the high power condition and the high gain condition, respectively. The experimental results showed output power of 27.1dBm and ACLR of 20dB, PAE of 34%, and linear power gain of 18.9dB over frequency ranges from 1920MHz to 1980MHz.
Keywords
SiGe HBT; IMT-2000;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 J. A. Topich and E. T. Yon, 'The effects of high temperature annealing on MNOS devices,' J. electrochem. Soc., vol. 123, p. 535, 1976   DOI   ScienceOn
2 G. Venna and N. Mielke, 'Reliability of ETOX based flash memories,' Proc. IRPS, p. 158, 1988
3 M. H. White, Y. Yang, A. Purwar, and M. French, 'A low voltage SONOS nonvolatile semiconductor memory technology,' IEEE Trans. Comp. Pack. Manu. Tech., vol. 20, p. 190, 1997   DOI   ScienceOn
4 B. V. Keshavan and H. C. Lin, 'MONOS memory element,' IEDM, p. 140, 1968
5 E. Suzuki, H. Hiraishi, K. Ishi, and Y. Hayashi, 'A low voltage alterable EEPROM with meta1-oxide-nitride-oxide- semiconductor (MONOS) structure,' IEEE Trans. Elect. Dev., vol. ED-30, p. 122, 1983   DOI   ScienceOn
6 Y. Yatsuda, T. Hagiwara, S. Minami, R. ondo, K. Uchida, and K. Uchiumi, 'Scaling down MNOS nonvolatile memory devices,' Jap. J. Appl. Phys., vol. 21, 521-1, p. 85, 1982   DOI
7 Z. A. Weinberg, K. J. Stein, T. N. Nguyen, and J. Y. Sun, 'Ultrathin oxide-nitride-oxide films,' Appl. Phys. Lett., vol. 57, no. 12, p. 1248, 1990   DOI
8 M. C. Peckerar and N. Bluzer, 'Hydrogen annealed nitride/oxide dielectric structures for radiation hardness,' IEEE Trans. Nucl. Sci., vol. NS-27, p. 1753, 1980   DOI   ScienceOn
9 고석웅, 정학기, '나노 구조 Double Gate MOSFET의 핀치오프특성에 관한 연구' 한국해양정보통신학회논문지， vol. 6, no. 7, p. 1074, 2002
10 F. R. Libsch, A. Roy, and M. H. White, 'Charge transport and storage of low programming voltage SONOS/MONOS memory devices,' Solid-State electronics, vol. 33, no. 1, p. 105, 1990   DOI   ScienceOn
11 H. Reisinger, M. Franosch, B. Hasler， and T. Bohm, 'A Novel SONOS structure for nonvolatile memories with improved data etention,' VLSI Tech. Digest Tech. Symp. 9A-2, 1997
12 S. Minami and Y. Kamigaki, 'New scaling uidelines for MNOS nonvolatile memory devices,' IEEE Transactions on Electron Devices, vol. 38, no. 11, p. 2519, 1991   DOI   ScienceOn
13 W. D. Brown, R. V. Jones, and R. D. Nasby, ''The MONOS memory transistor: application in a radiation-hard nonvolatile RAM', Solid-State Electronics, vol. 28, no. 9, p. 877, 1985   DOI   ScienceOn
14 F. R. Libsch, A. Roy, and M. H. White 'Amphoteric trap modeling of multi-dielectric scaled SONOS nonvolatile memory structures, 8th NVSM, 1986