• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.104-107
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• 2001

In order to investigate the effect of Ge addition to the Cu matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt % Ge alloys were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$. The values of AC loss of Ge added wires were decreased to 40 % compare with no addition wire. Low AC loss was due to segregation of Ge rich layer in the Cu-Ge matrix. If Ge added wire with thin Nb filaments were fabricated, slow diffusion rate of Sn would be overcome and decreased AC loss that is weak Point of internal tin method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.496-499
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• 2000

In order to investigate the effect of Ge addition to the Cu Matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt％ Ge alloy were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.573-578
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• 2003

Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.

• 한국세라믹학회지
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• 제32권11호
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• pp.1269-1275
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• 1995

Effects of GeO2 addition on the thermal and structural stabilities of PbO-Bi2O3-Ga2O3 glasses were studied. Thermal stabilities, as assessed by the weighted thermal stability factors [(Tx-Tg)/Tg], increased with GeO2 concentraton from 0.097 to 0.210 with the addition of 20 mol% GeO2. Increasing GeO2 content resulted in the decrease of apparent density, molar volume, refractive index and thermal expansion. On the other hand, IR transmission cut-off (λT=50%) moved from 6.73${\mu}{\textrm}{m}$ for the ternary PbO-Bi2O3-Ga2O3 glass to shorter wavelength side, 5.98${\mu}{\textrm}{m}$ for a glass containing 20mol% GeO2. There were little change with GeO2 content, however, in the activation energies for the viscous flow of approximately 140 kcal/mole within the temperature interval of 300~50$0^{\circ}C$. Addition of GeO2 to PbO-Bi2O3-Ga2O3 glasses enhanced the thermal and structural stabilities significantly at the expense of their infrared transmittance. An appropriate compsomise between these two opposite trends should be made following the specifications of the final applications.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.657-662
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• 2003

This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

• 한국축산식품학회지
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• 제36권6호
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• pp.744-751
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• 2016

The objective of this study was to investigate the effects of partial beef fat replacement (0, 30, 50, 100%) with gelled emulsion (GE) prepared with olive oil on functional and quality properties of model system meat emulsion (MSME). GE consisted of inulin and gelatin as gelling agent and characteristics of gelled and model system meat emulsions were investigated. GE showed good initial stability against centrifugation forces and thermal stability at different temperatures. GE addition decreased the pH with respect to increase in GE concentration. Addition of GE increased lightness and yellowness but reduced redness compared to control samples. The results of the study showed that partial replacement of beef fat with GE could be used for improving cooking yield without negative effects on water holding capacity and emulsion stability compared to C samples when replacement level is up to 50%. The presence of GE significantly affected textural behaviors of samples (p<0.05). In conclusion, our study showed that GE have promising impacts on developing healthier meat product formulations besides improving technological characteristics.

• Journal of Ginseng Research
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• 제29권3호
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• pp.145-151
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• 2005

식물조직배양기술을 이용하여 Ge를 함유한 인삼 root를 생산하고자, 0.5mg/L BAP와 3.0mg/L NAA조합의 식물생장 조절물질로 유도된 인삼 root를 이용하여 배양을 위한 최적 $GeO_2$농도, $GeO_2$ 첨가시기 및 배지의 pH를 조사하였다. 인삼 root의 생장에 가장 좋은 $GeO_2$ 농도는 10ppm, $GeO_2$ 첨가시기는 배양 초기(0주), pH는 5.5였고, 인삼 root내 Ge의 함량이 가장 높았을 때의 $GeO_2$농도는 100ppm이었다. $GeO_2$를 첨가하여 배양한 기간이 길수록 Ge함량이 증가하였으나 6주 이후부터 생장율이 둔화되어 $GeO_2$ 100ppm에서는 생장율이 아주 낮아 대조구의 1/2 정도였다. 배양 초기에 $GeO_2$를 첨가하여 8주간 배양한 인삼 root의 Ge 함량이 $29.4mg\%$인데 반해, 배양 2주째에 $GeO_2$를 첨가한 인삼 root의 경우는 Ge 함량이 $38.6mg\%$이므로, 배양 후 2주 후에 $GeO_2$를 첨가하는 것이 인삼 root의 Ge흡수에 더욱 효과적이었다. Ge흡수가 가장 잘 이루어지는 최적 pH는 5.5였으며 사포닌 함량은 $GeO_2$의 첨가농도가 증가할수록 감소하였다.

• 한국세라믹학회지
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• 제54권3호
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• pp.249-256
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• 2017

We design Ge-Al multilayer assemblies as anode materials for Li-ion batteries, in which Ge and Al thin films are alternately deposited by a radio sputtering method. By sandwiching Ge layers between Al layer, the cyclability, rate capability, and capacity of Ge are improved significantly. The success of the Ge-Al multilayer is attributed to the Al films. To maintain the integrity of electrical contact, Al acts as an elastic layer, which can expand or shrink with the Ge film upon lithiation or delithiation. In addition, the presence of the Al film on the surface can prevent direct contact of Ge and electrolyte, thereby reducing the growth of a SEI layer. Importantly, with high electrical and ionic conductivities, the Al film provides efficient electrical and ionic routes for electrons and Li-ions to access the Ge film, promoting a high specific capacity and high rate capability for Ge.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• 한국축산식품학회지
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• 제40권3호
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• pp.426-443
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• 2020

In order to investigate the use of oil in water gelled emulsion (GE) prepared with healthier oil combinations as beef fat replacer in the fresh chicken sausage formulations, four batches of fresh sausages were produced. The first batch was control (C) sample formulated with %100 beef fat, other batches were codded as GE50, GE75, and GE100 respective to the percentage of beef fat replaced with GE. The addition of GE to sausage formulation resulted in an increment in moisture and protein contents while a decrement was observed in fat content (p<0.05). pH, cooking yield and water holding capacity values of GE added samples were found lower than C (p<0.05). GE addition caused lower CIE L* values in samples, however, this trend was not observed in CIE a* and CIE b* values. Initially, the lowest peroxide and the highest TBARS values were recorded in GE100 samples on the 0^th d (p<0.05). Peroxide and TBARS values were in the limits. The texture of samples was softened while total saturated fatty acid content reduced up to 52.61% with the incorporation of GE (p<0.05). Taken together, our results showed that GEs can be used as fat replacers in meat product formulations without causing undesirable quality changes.