• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.6
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• pp.1338-1342
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• 2011

In this paper, threshold voltage characteristics have been analyzed as one of short channel effects occurred in double gate(DG)MOSFET to be next-generation devices. The Gaussian function to be nearly experimental distribution has been used as carrier distribution to solve Poisson's equation, and threshold voltage has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and threshold voltage has been obtained from this model. Since threshold voltage has been defined as gate voltage when surface potential is twice of Fermi potential, threshold voltage has been derived from analytical model of surface potential. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the threshold voltage characteristics have been considered according to the doping profile of DGMOSFET.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.878-881
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.

• Journal of Communications and Networks
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• v.14 no.3
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• pp.237-242
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• 2012

One of the major problems for accurate channel estimation in power line communication systems is impulsive noise. Traditional channel estimation algorithms are based on the assumption of Gaussian noise, or the need to locate the positions of impulsive noise. The algorithms may lose optimality when impulsive noise exists in the channel, or if the location estimation of impulsive noise is inaccurate. In the present paper, an effective channel estimation algorithm based on a robust cost function is proposed to mitigate impulsive noise. The proposed method can provide a closed-form solution, and the application of robust estimation theory enables the proposed method to be free from localization of impulsive noise and thus can guarantee that the proposed method has better performance. Simulations verified the proposed algorithm.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.35-41
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• 2007

In this paper, a modified Fuzzy C-Means (MFCM) algorithm is presented for nonlinear blind channel equalization. The proposed MFCM searches the optimal channel output states of a nonlinear channel, based on the Bayesian likelihood fitness function instead of a conventional Euclidean distance measure. In its searching procedure, all of the possible desired channel states are constructed with the elements of estimated channel output states. The desired state with the maximum Bayesian fitness is selected and placed at the center of a Radial Basis Function (RBF) equalizer to reconstruct transmitted symbols. In the simulations, binary signals are generated at random with Gaussian noise. The performance of the proposed method is compared with that of a hybrid genetic algorithm (GA merged with simulated annealing (SA): GASA), and the relatively high accuracy and fast searching speed are achieved.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.762-765
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• 2013

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, we know the subthreshold current was influenced on parameters of Gaussian function and gate oxide thickness for DGMOSFET.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.14 no.3
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• pp.280-292
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• 1989

In this paper, the error rate equations of digitally modulated signals transmitted through the channel which is not only Gaussian/Impulsive noise but also multi-path fading have been derived. Using the derived equations for the error probabilities of ASK, QAM, CPSK, DPSK, FSK, and MSK signals, the error rate performances of digital modulation systems have been evaluated and represented in the graphs as the functions of CNR, Impulsive indes, the ratio of Gaussian noise power component to Impulsive noise power component, and fading figures. The results show that, in the deep fading environment, the error is occurred more frequency by Gaussian noise than Impulsive noise. And the comparison of various systems certifies that PSK is superior to the ohter systems in the deep fading or shallow fading environment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.425-430
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• 2014

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, analytical model showed that subthreshold current was influenced by parameters of Gaussian function and gate oxide thickness of DGMOSFET.

• Journal of information and communication convergence engineering
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• v.8 no.6
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• pp.609-617
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• 2010

This paper is concerned with the use of a selforganizing map (SOM) to estimate the desired channel states of an unknown digital communication channel for blind equalization. The modification of SOM is accomplished by using the Bayesian likelihood fitness function and the relation between the desired channel states and channel output states. At the end of each clustering epoch, a set of estimated clusters for an unknown channel is chosen as a set of pre-defined desired channel states, and used to extract the channel output states. Next, all of the possible desired channel states are constructed by considering the combinations of extracted channel output states, and a set of the desired states characterized by the maximal value of the Bayesian fitness is subsequently selected for the next SOM clustering epoch. This modification of SOM makes it possible to search the optimal desired channel states of an unknown channel. In simulations, binary signals are generated at random with Gaussian noise, and both linear and nonlinear channels are evaluated. The performance of the proposed method is compared with those of the "conventional" SOM and an existing hybrid genetic algorithm. Relatively high accuracy and fast search speed have been achieved by using the proposed method.

• Journal of Korea Multimedia Society
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• v.14 no.8
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• pp.965-980
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• 2011

In this paper, the use of conditional Fuzzy C-Means (CFCM) aimed at estimation of desired states of an unknown digital communication channel is investigated for blind channel equalization. In the proposed CFCM, a collection of clustered centers is treated as a set of pre-defined desired channel states, and used to extract channel output states. By considering the combinations of the extracted channel output states, all possible sets of desired channel states are constructed. The set of desired states characterized by the maximal value of the Bayesian fitness function is subsequently selected for the next fuzzy clustering epoch. This modification of CFCM makes it possible to search for the optimal desired channel states of an unknown channel. Finally, given the desired channel states, the Bayesian equalizer is implemented to reconstruct transmitted symbols. In a series of simulations, binary signals are generated at random with Gaussian noise, and both linear and nonlinear channels are evaluated. The experimental studies demonstrate that the performance (being expressed in terms of accuracy and speed) of the proposed CFCM is superior to the performance of the existing method exploiting the "conventional" Fuzzy C-Means (FCM).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.372-377
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• 2013

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET has the advantage to reduce the short channel effects as improving the current controllability of gate. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change of the breakdown voltage for gate oxide thickness and channel thickness.