• 제목/요약/키워드: Gauge factor

검색결과 168건 처리시간 0.031초

금속 외팔보에 접착된 박막 실리콘 스트레인 게이지의 제작 및 성능 평가 (Fabrication and Performance Evaluation of Thin Polysilicon Strain Gauge Bonded to Metal Cantilever Beam)

  • 김용대;김영덕;이철섭;권세진
    • 대한기계학회논문집A
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    • 제34권4호
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    • pp.391-398
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    • 2010
  • 금속은 가공성이 우수하기 때문에 다양한 형태의 구조물이나 격막을 제작할 수 있다. 이런 금속 구조물이나 격막에 민감도가 월등히 우수한 실리콘 스트레인 게이지를 적용할 경우 그 응용 범위가 다양해질 수 있다. 이에 금속구조물에 다결정 실리콘 스트레인 게이지를 접착한 형태의 센서를 제안하였다. 실리콘 기판을 이용해 박막형 다결정 실리콘 스트레인 게이지를 제작하기 위한 제작공정을 확립하였으며, 제작된 실리콘 스트레인 게이지를 금속 변형부 위에 접착하기 위한 접착공정을 확립하였다. 이후 금속 외팔보에 실리콘 스트레인 게이지를 글래스 프릿 접착하여 성능평가를 실시하였다. 성능평가 결과 게이지팩터는 34.0 의 값을 가졌으며, TCR(Temperature Coefficient of Resistance)은 $-328\;ppm/^{\circ}C$의 값을 가졌다.

고온 스트레인 게이지용 질화탄탈박막의 제작 (Fabrication of Tantalum Nitride Thin-Film as High-temperature Strain Gauges)

  • 최성규;나경일;남효덕;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.1022-1025
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    • 2001
  • This paper presents the characteristics of TaN thin-film as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼20%)N$_2$). The electrical and mechanical characteristics of these films investigated with the thickness range 1650∼1870${\AA}$ and room temperature resistivities in the range 178.3 ${\mu}$$\Omega$cm to 3175.7 ${\mu}$$\Omega$cm. The TaN thin-film strain gauge deposited in Ar-(20%)N$_2$atmosphere is obtained a temperature coefficient of resistance(TCR), 0∼-1357 ppm/$^{\circ}C$ in the temperature range 25∼275$^{\circ}C$ and a high temporal stability with a longitudinal gauge factor, 2.92∼3.47. Because of their high resistivity, low TCR and linear gauge factor, these cermet thin-film may allow high-temperature strain gauges miniaturization.

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2인자 혼합모형의 제약과 비제약 설계에 의한 게이지 R&R 연구의 고찰 (Review of Gauge R&R Studies by Restricted and Unrestricted Design in the Two-Factor Mixed Model)

  • 최성운
    • 대한안전경영과학회:학술대회논문집
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    • 대한안전경영과학회 2009년도 추계학술대회
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    • pp.657-665
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    • 2009
  • The paper reviews gauge R&R studies by two-factor mixed models including random and fixed factors. The two-factor mixed models include restricted models and unrestricted models considering the interaction of two factors. This study also classifies the models according to the number of factors, and the combination of various factors such as random factor, fixed factor, block factor and repetition type.

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루어낚시 참여자의 손목 움직임 측정을 위한 스트레치 센서 개발 (The Development of Stretch Sensors for Measuring the Wrist Movements for People Using Fishing Lures)

  • 최윤성;박진희;김주용
    • 감성과학
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    • 제25권3호
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    • pp.77-90
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    • 2022
  • 본 연구의 목적은 루어낚시 참여자의 손목 움직임 측정을 위한 스트레치 센서를 개발하는 것이다. 손목움직임 측정을 위해 스트레치 센서를 손목에 부착하여 배굴, 저굴 그리고 랜딩동작을 게이지율, 인장강도 그리고 신장회복률을 척도로 실험을 진행하였다. CNT 분산액을 이용한 전도성 센서를 개발하고 E-band에 동일한 조건으로 적용하였다. 함침을 각각 한 번, 두 번, 그리고 세 번한 같은 크기의 5종, 15가지 센서를 만능재료시험기(Dacell dn-fga Universal testing machine, UTM)를 활용해 게이지율(Gauge Factor)을 측정하였다. 두 번 함침한 센서가 게이지율이 가장 우수했으며, 게이지율과 인장강도가 높은 세 가지 센서로 프로토 타입을 제작하였다. 아두이노에 연결하여 동작테스트를 한 결과, 인장강도와 게이지율이 가장 높은 시료 1이 세 가지 동작에서 일정한 파장이 유지되었다. 시료 2,3은 배굴과 저굴에서는 일정한 파장을 나타내었지만, 랜딩동작에서는 신호 노이즈가 나타났다. 이는, 랜딩동작에서는 인장강도와, 게이지율에 따라 파장의 패턴이 다르게 나타나는 것을 알 수 있었다. 이와 같은 결과로 손목의 움직임 측정을 위한 스트레치 센서 제작시에 필요한 조건들을 유추할 수 있었다. 본 연구의 결과를 활용하여 루어낚시용 스마트 웨어러블 제품 개발에 응용이 가능할 것으로 사료된다.

측정 정밀도 추정을 위한 게이지 실험계획 프로세스 개발 및 적용 (Development and Implementation of Experimental Design Process for Estimating the Measurement Precisions)

  • 최성운
    • 대한안전경영과학회:학술대회논문집
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    • 대한안전경영과학회 2009년도 추계학술대회
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    • pp.557-563
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    • 2009
  • The research develops measurement processes for estimating and evaluating the gauge R&R(Reproducibility & Repeatability) using ANOVA(Analysis of Variance) of experimental design tools. The ten-step processes developed include experimental goal setting, the selection of characteristics(factors, levels), data model, ANOVA, EMS(Expected Mean Square), estimation of gauge precisions, and evaluation indexes. The three-factor combined measurement models are presented to show the processes developed in this paper.

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크로질화박막 스트레인 게이지의 특성 (Characteristics of Chromiun Nitride Thin-film Strain Guges)

  • 정귀상;김길중
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.134-138
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    • 2000
  • The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

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고감도 박막형 스트레인 게이지의 제작 (Fabrication of High-sensitivity Thin-film Type Strain-guges)

  • 정귀상;서정환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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    • pp.135-141
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    • 2000
  • The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

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고온 스트레인 게이지용 질화탄탈박막의 제작 (Fabrication of Tantalum Nitride Thin-Film as High-temperature Strain Gauges)

  • 김재민;최성규;남효덕;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.97-100
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    • 2001
  • This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(4∼16 %)N$_2$). These films were annealed for 1 hour in 2x10$\^$-6/ Torr vaccum furnace range 500∼1000$^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition(900$^{\circ}C$, 1 hr.) in 8% N$_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, $\rho$=768.93 ${\mu}$Ω cm, a low temperature coefficient of resistance, TCR=-84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=4.12.

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탄소섬유의 게이지 계수 측정 및 센서 응용 (Measurement of a gauge factor of a carbon fiber and its application to sensors)

  • 김지관;박창신;이동원
    • 센서학회지
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    • 제17권3호
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    • pp.162-167
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    • 2008
  • In this paper we report on the electrical properties of carbon fiber which is an attractive material for strain gauges and can also be applied to resonating micro sensors. The carbon fibers used in this research was manufactured from polyactylonitrile (PAN). The fabricated carbon fibers had about $10\;{\mu}m$ in length and several centimeters in length. We employed a micro structure to measure electrical properties of the carbon fiber. The measured electrical resistivity of the carbon fibers were about $3{\times}10^{-3}{\Omega}{\cdot}cm$ A gauge factor of the carbon fiber is also observed with the same system and it was about 400, depending on the structure of the carbon fiber. For the sensor applications of the carbon fiber, it is selectively placed between the gap of Al electrodes using a dielectrophoresis method. When the carbon fiber is resonated by a piezoelectric ceramic, resistance change at a variety of resonance mode was observed through an electrical system.

CVD공정으로 제작된 멀티레이어 그래핀의 압저항 효과를 이용한 직접화된 압력센서 개발 (Development of Integration Pressure Sensor Using Piezoresistive Effect of Chemical Vapor Deposition (CVD) Produced Multilayer Graphene)

  • 임대윤;하태원;이칠형
    • 센서학회지
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    • 제32권6호
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    • pp.470-474
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    • 2023
  • In this study, a diaphragm-type pressure sensor was developed using multi-layer(four-layer) graphene produced at 1 nm thickness by thermally transferring single-layer graphene produced by chemical vapor deposition (CVD) to a 6" silicon wafer. By measuring the gauge factor, we investigated whether it was possible to produce a pressure sensor of consistent quality. As a result of the measurement, the pressure sensor using multilayer graphene showed linearity and had a gauge factor of about 17.5. The gauge factor of the multilayer graphene-based pressure sensor produced through this study is lower than that of doped silicon, but is more sensitive than a general metal sensor, showing that it can be sufficiently used as a commercialized sensor.