• Design & Manufacturing
• /
• v.17 no.1
• /
• pp.64-69
• /
• 2023

This paper explores the impact of gate shape changes on the size and density of foamed cells in microcellular foam injection molding. Five different gate shapes were examined while varying the amount of nitrogen gas(N2) injected for foaming. Analysis of the results showed that while average values did not change significantly, deviation values decreased by approximately 65% for cell size and 56% for density when 3.5wt% of nitrogen gas was injected in the film gate. Further analysis was conducted to verify this phenomenon, revealing that the contact area between the gate and product had the greatest impact. Our findings indicate that to ensure uniform generation of foamed cells in microcellular foaming product design, a gate with a wide contact area should be secured.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2003.05a
• /
• pp.363-370
• /
• 2003

Shrinkage of injection molded parts is different form operational conditions of injection molding such as injection temperature, injection pressure and mold temperature, and mold design such as gate size. It is also various for different resins which have crystalline structure or not. In this study part shrinkage was investigated for various operational condition and resins; PBT for crystalline polymer, and PC and PMMA for amorphous polymer was used in experiment. Crystalline polymer shows higher part shrinkage by about three times than amorphous polymer. Part shrinkage increased as injection temperature and mold temperature increased and injection pressure decreased. Part shrinkage decreased as gate size increased since the pressure delivery is mush easier for large gate size. Part shrinkage according to the gate location was that the position in the part with close to the gate showed large shrinkage and this phenomenon might be occurred by residual stress.

• International journal of advanced smart convergence
• /
• v.12 no.4
• /
• pp.1-7
• /
• 2023

Large-size, organic light-emitting device (OLED) panels based on highly reliable gate driver circuits integrated using InGaZnO thin film transistors (TFTs) were developed to achieve ultra-high resolution TVs. These large-size OLED panels were driven by using a novel gate driver circuit not only for displaying images but also for sensing TFT characteristics for external compensation. Regardless of the negative threshold voltage of the TFTs, the proposed gate driver circuit in OLED panels functioned precisely, resulting from a decrease in the leakage current. The falling time of the circuit is approximately 0.9 ㎲, which is fast enough to drive 8K resolution OLED displays at 120 Hz. 120 Hz is most commonly used as the operating voltage because images consisting of 120 frames per second can be quickly shown on the display panel without any image sticking. The reliability tests showed that the lifetime of the proposed integrated gate driver is at least 100,000 h.

• Journal of architectural history
• /
• v.19 no.2
• /
• pp.117-132
• /
• 2010

The Great south gate of Seoul Castle, Sung-Rye-Mun, the east gate of Seoul Castle, Hung-In-Ji-Mun, the south gate of Hwa-Sung Castle, Pal-Dal-Mun and the north gate of Hwa-Sung Castle, Jang-An-Mun are typical significant castle gate of Chosun Dynasty. They have a lot in common with exterior. Additionally there are also something common in dimensions. At first, the arch dimensions of lower story is very similar and the columns of upper story are the regular intervals. Purpose of this study is to confirm similarities above mentioned were intended on purpose and if then what was the reason. The results of this study were described separately as follows. 1. The widths of the arches were based on each 16Cheok and 18Cheok. 2. The heights of the arches followed less strictly rule than the widths. 3. The widths of the arches, 16Cheok was same size as width of middle-size road (中路, Jung-Ro) inside the Castle town in Chosun Dynasty. 4. The widths of the arches, 16Cheok was the standard size of exit went through castle and then the standard size of road arrived at one's destination. 5. The widths of the arches had an effect on the intervals between the columns of the upper story. Finally we recognized that in Chos${\u{o}}$n Dynasty the widths of the gate arches in Seoul castle and Hwa-Sung castle had relevance to the city planning largely and widths of the gate arches had an effect on the intervals between the columns of the upper story partly.

• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.747-750
• /
• 2003

We have studied PHEMTs optimization by means of fabrication of PHEMTs. All PHEMTs have been fixed with a gate length of 0.1 ${\mu}{\textrm}{m}$, a gate head size of 0.75${\mu}{\textrm}{m}$, and two gate fingers. We have measured the characteristics of PHEMTs with variation of source-drain spacing, pad size, and gate width. As a result, we have found the enhanced characteristics of $I_{dss}$, $S_{21}$, $h_{21}$, $f_{T}$, $f_{max}$, and $G_{ms}$ with increasing gate width. Also, $g_{m}$ has improved with decreasing source-drain spacing, and $S_{21}$ has improved with deceasing pad size.e.e.e.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.361-365
• /
• 2019

Although there is no strict definition of a power semiconductor device, a general description is a semiconductor that has capability to control more than 1 W of electricity. Integrated gate bipolar transistors (IGBTs), which are power semiconductors, are widely used in voltage ranges above 300 V and are especially popular in high-efficiency, high-speed power systems. In this paper, the size of the gate was adjusted to test the variation in the yield voltage characteristics by measuring the electric field concentration under the trench gate. After the experiment Synopsys' TCAD was used to analyze the efficiency of threshold voltage, on-state voltage drop, and breakdown voltage by measuring the P- region and its size under the gate.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1809-1811
• /
• 1999

In recent years, attempts have been made to greatly improve the display quality of active-matrix liquid crystal display devices, and many techniques have been proposed to solve such problems as gate delay, feed-through voltage and image sticking. Gate delay is one of the biggest limiting factors for large-screen-size, high-resolution thin-film transistor liquid crystal display (TFT/LCD) design. Many driving method proposed for TFT/LCD progress. Thus we developed gate driving signal generator. Since Pixel-Design Array Simulation Tool (PDAST) can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the driving signals of gate lines on the pixel operations can be effectively analyzed.

• Design & Manufacturing
• /
• v.12 no.3
• /
• pp.55-59
• /
• 2018

In a multi-cavity mold having a runner layout of a fish bone structure, problems of unbalanced filling between cavities occur constantly. Unbalanced charging lowers the dimensional accuracy of a molded article and causes deformation after molding. To solve this problem, the gate size connected to each cavity is adjusted using the BGV (Balanced Gate Value) equation. In this paper, in order to solve the filling imbalance problem of the runner layout mold of fish bone structure through injection molding analysis study, we compared the charging imbalance phenomenon before and after improvement after adjusting the gate size by applying BGV equation. From the results of the molding analysis, the shrinkage ratio before and after the improvement of the molded article was improved by only about 0.08%. Based on these results, it was confirmed that the charging imbalance problem was not significantly improved even when the BGV equation was applied.

• Transactions of Materials Processing
• /
• v.14 no.1 s.73
• /
• pp.49-56
• /
• 2005

In the semi-solid die casting process, an important thing is the flow behavior of semi-solid materials. The flow patterns of the semi-solid material can make the defects during die filling. To control the flow patterns is very important and difficult. In this paper, the flow behavior of the semi-solid A356 alloy material during die filing at various die gate shapes has been observed with the grain size controlled material. The effect of the gate shape on the die filling characteristics was investigated. The filling tests in each plunger stroke were experimented, and also simulated on the semi-solid material die casting process by MAGMAsoft. According to the filling tests and computer simulation, the effect of the gate shape on liquid segregation has been investigated.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.10a
• /
• pp.152-155
• /
• 2004

In the semi-solid die casting process, the important thing is the flow behaviors of semi-solid material. The flow patterns of semi-solid material can make the defects during die filling. To control of the flow patterns, is very important and difficult. In this paper, the flow behaviors of the semi-solid A356 alloy material during die filling at various die gate shapes has been observed with the grain size controlled material. The effects of the gate shape on the die filling characteristics were investigated. The filling tests in each plunger strokes were experimented, also simulated on the semi-solid material die casting process by MAGMAsofi. According to the filling tests and computer simulation, the effect of the gate shape on liquid segregation had been investigated.