• Journal of Korean Society for Quality Management
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• v.42 no.3
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• pp.279-290
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• 2014

Purpose: The purpose of this study is to propose adoption of QFD and Stage-gate in order to analyze the quality of korea defense system. Methods: Drawing change data of initial production phase in korea defense system were anlayzed and a practical method was proposed. Results: The results of this study are as follows; Off line Quality Control should be introduced in development phase. Specially, in case of defense system, the best method is QFD(Quality Function Deployment) and Stage-gate process. At first, QFD 1 step defines product planning from VOC(Voice Of Customer), QFD 2 step specifies part planning from product planning, QFD 3 step defines process planning from part planning, QFD 4 step defines production planning from previous process planning. Secondly, Stage-gate process is adopted. This study is proposed 5 stage-gate in case of korea defense development. Gate 1 is located after SFR(System Function Review), Gate 2 is located after PDR(Preliminary Design Review), Gate 3 is located after CDR(Critical Design Review), Gate 4 is located after TRR(Test Readiness Review) and Gate 5 is located before specification documentation submission. Conclusion: Off line QC(Quality Control) in development phase is necessary prior to on line QC(Quality Control) in p roduction phase. For the purpose of off line quality control, QFD(Quality Function Deployment) and Stage-gate process can be adopted.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.612-615
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• 2002

This paper begin a new approach in the water-gate control using radio communication. The dissertation is on the controllable device development of water-gate in the remote distance from water-gate trough the transceiver by radio communication. The proposed water-gate control device is simpe in structure, an suitable for implementation of water-gate control in the remote distance. The remote controller water-gate device inspected the up and down motion of water-gate through the LCD displayer, so that it was very safety driving about the surroundings imformation, over loading and position of water-gate, and so on.

• Journal of Electrical Engineering and information Science
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• v.2 no.3
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• pp.132-138
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• 1997

Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.515-520
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• 2002

This paper begin a new approach in the water-gate controller using radio communication. The dissertation is on the controllable device development of water-gate in the remote distance from water-gate trough the transceiver by radio communication. The proposed water-gate control device is simple in structure, an suitable for implementation of water-gate control in the remote distance. The remote controller water-gate device inspected the up and down motion of water-gate through the LCD displayer, so that it was very safety driving about the surroundings information, over loading and position of water-gate, and so on.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1668-1671
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• 2003

Today, remote monitoring and control systems are becoming the cost-effetive management tools for almost all water user groups, including irrigators, water districts, municipal water suppliers, and wildlife management groups. This paper represents a new approach in the water-gate control using radio communication. The proposed device is simple in structure and suitable for implementation of water-gate control through the transceiver by radio communication. It was confirmed that the developed device was very efficient to control water-gate and to prove the up and down motion of water-gate through the LCD displayer

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2892-2898
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• 2015

We propose a new Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor(DIG Ambi-SiNWFET). The proposed transistor has two types of gate such as polarity gate and control gate. The polarity gate determines the operation that the gate bias controls NMOSFET or PMOSFET. The voltage of control gate controls the current characteristic of the transistor. We investigated systematically work functions of the two gates and source/drain to operate ambipolar current-voltage characteristics using 2D device simulator. When the work functions of polarity gate, control gate and source/drain are 4.75eV, 4.5eV, and 4.8eV, respectively, it showed the obvious ambipolar characteristics.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.2
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• pp.83-88
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• 1999

Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.184-187
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• 2002

In this work, the electrical characteristics of organic thin film transistors with the stacked organic gate insulators have been studied. PVP(Polyvinylphenol) and polystyrene were used as gate insulating materials. Both the high dielectric constant of PVP and better insulating capability of polystyrene were compensatorily adopted in two different stacking orders of PVP-polystyrene and polystyrene-PVP. The output characteristics of the device with the stacked gate insulator showed substantial improvement compared with those of the devices with either PVP or polystyrene gate insulator: Furthermore, these stacked organic gate insulators can differently affect the TFT characteristics with the stacking orders. The electrical properties of TFTs with organic gate insulators stacked in different orders are discussed.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1546-1548
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• 2002

In this paper, the electrical characteristics of pentacene thin film transistors(TFTs) with stacked and surface-treated gate insulators have been investigated. The semiconductor layer of pentacene was thermally evaporated onto the stacked gate insulators. For the gate insulating materials. PVP(PolyvinylPhenol) and polystyrene were spin-coated with two different stacking orders, PVP-polystyrene and polystyrene-PVP. Rapid solvent evaporation during the spin-coating processes of these insulating layers produces non-equilibrium phase morphologies accompanied by surface undulations on gate insulator interfaces. This non-equilibrium phase morphology affects the growth mode of the subsequent pentacene layer. Therefore, in order to smoothen the gate dielectric surfaces, gate dielectric surfaces were rubbed laterally along the direction from the drain to the source TFTs with with stacked and surface-treated gate insulators have provided improved operational characteristics.