• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Journal of the Korean Society of Industry Convergence
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• v.24 no.5
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• pp.589-596
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• 2021

In this study, the optimum gating system was designed, and the two zinc alloy worm gears were manufactured in single process by applying a symmetrical gating system with 2 runners. The SRG ratio is set to 1 : 0.9 : 0.6, and the cross-sectional shapes such as sprue, runner and gate are designed. In order to determine whether the design of the gating system is appropriate, casting analysis was carried out. It takes 4.380 s to charge the casting 100%, 0.55 to 0.6 m/s at the gates and solidification begins after the casting is fully charged. The amount of air entrapment is 2% in the left gear and 6% in the right gear. Hot spots occurred in the center hole of the gear, and pores were found to occur around the upper part of the hole. Therefore, the design of the casting method is suitable for worm gears. CT analysis showed that all parts of worm gear were distributed with fine pores and some coarse pores were distributed around the central hole of worm gear. The yield strength and tensile strength were 220 MPa, 285 MPa, and the elongation rate was 8%. Vickers hardness is 82 HV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.

• Nuclear Engineering and Technology
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• v.56 no.2
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• pp.745-752
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• 2024

A method for gamma/neutron event classification based on frequency-domain analysis for mixed radiation environments is proposed. In contrast to the traditional charge comparison method for pulse-shape discrimination, which requires baseline removal and pulse alignment, our method does not need any preprocessing of the digitized data, apart from removing saturated traces in sporadic pile-up scenarios. It also features the identification of neutron events in the detector's full energy range with a single device, from thermal neutrons to fast neutrons, including low-energy pulses, and still provides a superior figure-of-merit for classification. The proposed frequency-domain analysis consists of computing the fast Fourier transform of a triggered trace and integrating it through a simplified version of the transform magnitude components that distinguish the neutron features from those of the gamma photons. Owing to this simplification, the proposed method may be easily ported to a real-time embedded deployment based on Field-Programmable Gate Arrays or Digital Signal Processors. We target an off-the-shelf detector based on a small CLYC (Cs2LiYCl6:Ce) crystal coupled to a silicon photomultiplier with an integrated bias and preamplifier, aiming at lightweight embedded mixed radiation monitors and dosimeter applications.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.9-16
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• 1999

When the conventional IPD (inter-poly-dielctrics) layer with ONO(oxide-nitride-oxide) structure was used in the Flash EEPROM cell, its data retention characteristics were significanfly degraded because the top oxide of the ONO layer was etched off due to the cleaning process used in the gate oxidation process for the peripheral MOSFETs. When the IPD layer with the ONON(oxide-nitride-oxide-nitride) was used there, however, its data retention characteristics were much improved because the top nitride of the ONON layer protected the top oxide from being etched in the cleaning process. For the modelling of the data retention characteristics of the Flash EEPROM cell with the ONON IPD layer, the decrease of the threshold voltage cue to the charge loss during the bake was here given by the empirical relation ${\Delta}V_t\; = \;{\beta}t^me^{-ea/kT}$ and the values of the ${\beta}$=184.7, m=0.224, Ea=0.31 eV were obtained with the experimental measurements. The activation energy of 0.31eV implies that the decrease of the threshold voltage by the back was dur to the movement of the trapped electrons inside the inter-oxide nitride layer. On the other hand, the results of the computer simulation using the model were found to be well consistent with the results of the electrical measurements when the thermal budget of the bake was not high. However, the latter was larger then the former in the case of the high thermal budger, This seems to be due to the leakage current generated by the extraction of the electrons with the bake which were injected into the inter-oxide niride later and were trapped there during the programming, and played the role to prevent the leakage current. To prevent the generation of the leakage current, it is required that the inter-oxide nitride layer and the top oxide layer be made as thin and as thick as possible, respectively.

• Journal of Technologic Dentistry
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• v.36 no.3
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• pp.141-147
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• 2014

Purpose: Dental casting #Gr I (Co-25Cr-5Mo-3Sn-1Mn-1Si), #Gr II (Co-25Cr-5Mo-5Cu-1Mn -1Si) and #Gr III (Co-25Cr-5Mo-3Sn-5Cu-1Mn-1Si) master alloys of granule type were manufactured the same as manufacturing processes for dental casting Ni-Cr and Co-Cr-Mo based alloys of ingot type. These alloys were analyzed melting processes with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer. Methods: These alloys were manufactured such as; alloy design, the first master alloy manufatured using vacuum arc casting machine, melting metal setting in crucible, melting in VIM, pouring in the mold of bar type, cutting the gate and runner bar and polishing. These alloys were put about 30g/charge in the ceramic crucible of high frequency induction centrifugal casting machine and heat, Infrared thermal image analyzer indicated alloys in the crucible were set and operated. Results: The melting temperatures of these alloys measuring infrared thermal image analyzer were decreased in comparison with remanium$^{(R)}$ GM 800+, vera PDI$^{TM}$, Biosil$^{(R)}$ f, WISIL$^{(R)}$ M type V, Ticonium 2000 alloys of ingot type and vera PDS$^{TM}$(Aabadent, USA), Regalloy alloys of shot type. Conclusion: Co-Cr-Mo based alloy in addition to Sn(#Gr I alloy) were decreased the melting temperature with heating time of high frequency induction centrifugal casting machine using infrared thermal image analyzer.

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

• Korean Journal of Heritage: History & Science
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• v.39
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• pp.165-189
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• 2006

The purpose of this study is to examine process and organization of local government-managed construction by reviewing official documents and materials in regard to the official residences and castles officially constructed in Dongnae in the 19c Chosun Dynasty. Results of this study can be described as follows. 1) The construction of official residences requires exchanges of official documents among upper and lower governmental agencies concerned. Previously prepared for some 1 or 2 months, the construction was proceeded through proceeded from Paok to Gaegi, Ipju, Sangryang, Gaeok and to Iptaek. Such construction was carried out independently and concurrently Gijang and Yangsan neighboring Dongnae provided cooperation by way of supplying labor and timbers. 2) Dongnaebu castle was constructed under local autonomy system, like other government-oriented works, as governor of Dongnae became responsible for defending such establishment in 1739. The castle was built up in 1731 as an establishment with 6 gated and 15 forts. Directly controlled by governor of Dongnae, the castle continued to be partially repaired until the 19th century. Under the regime of Daewongun, the castle was enlarged and extended for military strengthening. Besides the gate having double-gated structure for the outside wall, the other five gates came to have bastions and 30 forts were additionally established, dramatically changing the structure of the castle as whole. 3) Government-managed construction was often implemented by an organization whose members included local government officials, lower administrative agencies and local influential persons. The construction of official residences was implemented by Gamyeokdogam which was headed by Jwasu of Hyangcheong. In the construction, chief of military officials became supervisor, who was responsibly supported by Saekri. The construction of castled were divided into several works, for example, establishments of fortress, tower gate and quarrying stone were implemented by the organization of Paejang, Gamkwan and Saekri. As a military official, Gamkwan supervised the construction. Saekri was in charge of related internal affairs. Paejang was an technical expert leading several workers. The construction of castles in 1870 were organized as a general rule having particularity of social conditions on Dongnae.

• Journal of the Korean Institute of Traditional Landscape Architecture
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• v.28 no.3
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• pp.85-97
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• 2010

This research studied the location and the spatial composition of Pihyang-jeong zone. Pihyang-jeong is regarded as one of the five great pavilions in Chollabuk-do. Located in Taein-myeon of Jeongeup-si, Pihyang-jeong is also called as 'the number one pavilion in Honam area'. 1. There is no record regarding the first construction of Pihyang-jeong. There is only transmitting by word of mouth that the scholar Choi Chi-won had an excursion to here and composed some poetry during the age of King Heon-gang of Shilla dynasty. However, there are records that Lee Ji-gweng had expanded the humble structure in 1618, Park Sung-go repaired it in 1664 and Yoo Geun repaired it again in 1715. 2. The location of Pihyang-jeong is 'high in north and low in south' and typical 'mountain in rear and water in front'. It has Seong-hwang Mountain(189m) in the north, Hang-ga Mountain(106m) in the south, Tae Mountain(33m) in the south and an open field in the northwest. 3. The spatial composition around Pihyang-jeong is as following. Pihyang-jeong faces 'Hayeonji'(the lower side lotus pond) in the south-south-west direction. 4. The buildings around Pihyang-jeong are; Pihyang-jeong, which was the pavilion of the government official not directly in charge of government office, Hambyeok-lu in the Hayeonji and the facility for the caretaker. Pihyang-jeong is a rectangular building with double eaves and hipped-and-gabled roof. It has five rooms in the front and four rooms in the side. Hambyeok-lu had been first built in 1918 as two-storey wooden pavilion with dancheong, traditional multicolored paintwork on wooden buildings. Then it was modified into rectangular single-storey pavilion with hipped-and-gabled roof and five rooms in 1971. In 2010, it was rebuilt as a hexagonal pavilion; therefore, the present shape is completely different one from the original shape. 5. The scenic features around Pihyang-jeong are as following. There are 21 stone monuments in Pihyang-jeong zone. The fence surrounding Pihyang-jeong is a traditional Korean style crude stone fence. There are three gates in three-gates-style, each gate made with two posts and one 'matbae'(gabled) roof. Also, a stepping stone for mounting/dismounting was found in the east of Pihyang-jeong outer perimeter. 6. The water scenic feature around Pihyang-jeong is a representative case of drawing in the water from the natural pond nearby government office and building a pavilion around the water. 7. The planting around Pihyang-jeong is as following. There are Zelkova trees in the boundary perimeter. In the southern small park, there are Zelkova trees, Crape-myrtie trees, Bushy young pine trees, Pine trees, Satuki, Purple azalea and Grass field. Around Hambyeok-lu in the Ha-yeonji, Elm trees, Zelkova trees and Pine trees are growing in good condition.

• Korean Journal of Heritage: History & Science
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• v.53 no.3
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• pp.24-41
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• 2020

The engraved line expression in metal crafts is a detailed technique of carving or decorating metal surfaces. This technique engraves a line using a tool on the surface of a metal craft. This technique was used extensively in articles made of various metal materials during the Goryeo Dynasty, and the range of patterns that could be expressed and the width of users was wide. In this paper, based on relics and literature, the concept of line representation of this engraving technique used in the metal crafts of the Goryeo Dynasty and the perceptions and terms of the Goryeo Dynasty were examined. In addition, the users engaged in this craft and the specific patterns and patterns of decoration were reviewed. Through these means, it was possible to confirm various aspects of a technique that was thought previously to involve just simple expression of lines using tools. In addition, through the literature, Geumseokmun Gate, and relics currently being transmitted, it was possible to confirm the utilization patterns of techniques used in various types of objects. Various uses have led to the combination with other metal craft techniques that were popular at the time, and while utilizing unique characteristics of the techniques, this maximized the molding of various patterns. In the meantime, it is true that the intaglio technique in metal crafts has not received much attention compared to the decoration techniques of other metal crafts, such as inlay, embossing, and openwork techniques in which decorative effects are maximized due to the recognition that the technique was used so widely in relics. However, the universality of the technique is premised on its wide use across all eras. As such, it was used in metal craft relics that reflect the various cultural characteristics of Korea and various cultural aspects that are currently passed down. On the one hand, technology has been passed down as a form of intangible heritage that embodies a longstanding craft culture which continues to the present in the fields of sculpture and intangible cultural properties. As such, the universality of Seongak contains many cultural meanings. In addition, the uniqueness of the technique is distinct, and it is deeply related to Goryeo, who was in charge of the use of technology and craftsmanship of the Joseon Dynasty and the metal craft technology that is currently handed down. I think research on future techniques should be continued in depth.