• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.534-540
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• 1990

In this paper the characteristics of submicron gate GaAs MESFET's have been studied using a particle model which takes into account the hot-electron transport phenomena, i.e., the velocity overshoot. \ulcornervalley(<000> direction), L valley (<111>direction), X valley (<100>direction) as the GaAs conduction energy band and optical phonon, acoustic phonon, equivalent intervalley, nonequivalent intervalley scattering as the scattering models, have been considered in this simulation. And the GaAs material and the device simulation have been done by determination of the free flight time, scattering mechanism and scattering angle according to Monte-Carlo algorithm which makes use of a particle model. As a result of the particle simulation, firstly the electron distribution, the potential energy distribution and the situation of electron displacement in 0.6 \ulcorner gate length device have been obtained. Secondly, the cutoff frequency, obtained by this method, is k47GHz which is in good agreement with the calculated result of theory. And the current-voltage characteristics curve which takes account of the buffer layer effect has been obtained. Lastly it has been verified that parasitic current at the buffer layer can be analyzed using channel depth modulation.

• Proceedings of the KIEE Conference
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• 1994.07a
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• pp.237-239
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• 1994

The MOS-controlled thyristor(MCT) is a new power semi-conductor device that combines four layers thyristor structure presenting regenerative action and MOS-gate providing controlled turn-on and turn-off. The MCT has very fast switching speed owing to voltage controlled MOS-gate, and very low on-state voltage drop resulting from regenerative action of four layers thyristor structure. In addition, because of a higher dv/dt rating and di/dt rating, gate drive circuit and snubber circuit can be simpler comparing to other power switching devices. So recently much interest and endeavor is being applied to develop the performance and ratings of the MCT. This paper describes the switching characteristic of the MCT for its practical applications and presents a model for PSPICE circuit simulation. The model for PSPICE circuit simulation is compared to the experimental result using MCTV75P60F1 made by Harris co..

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.107-117
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• 2010

An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available $ATLAS^{TM}$ device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.10
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• pp.1840-1844
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• 2008

In this paper, the influence of channel doping concentration, which the most important factor is as double gate MOSFET is fabricated, on transport characteristics has been analyzed in the subthreshold region. The analytical model is used to derive transport model based on Poisson equation. The thermionic omission and tunneling current to have an influence on subthreshold current conduction are analyzed, and the relationship of doping concentration and subthreshold swings of this paper are compared with those of Medici two dimensional simulation, to verify this model. As a result, transport model presented in this paper is good agreement with two dimensional simulation model, and the transport characteristics have been considered according to the dimensional parameters of double gate MOSFET.

• Journal of the Society of Naval Architects of Korea
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• v.45 no.6
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• pp.611-619
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• 2008

In most shipyards Floating Dock-gate System is adapted for dry docks. For the safe launching of ships in dry docks, smooth operation of dock-gate must be guaranteed. So it is very important to grasp its behavior in waves for securing the high productivity and the safety of workers. Its seakeeping ability was estimated numerically at the floating conditions and the free roll decay and the seakeeping model tests of dock-gate was carried out with bilge-keels of 3 different widths which have a scale of 1 to 20. More than 20% decrease of roll motion was observed in irregular beam seas by applying a bilge-keel system to the dock-gate that is long and narrow.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.3
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• pp.349-357
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• 2011

This study has an objective to estimate effect on water-quality enhancement by removal of contaminated river-bed material using a two-dimensional numerical modeling in the Seonakdong River, the Pyunggang River and the Maekdo River. RMA2 and RMA4 models were used for flow and contaminant transport simulation, respectively. After the analysis of the effects of flow restoration plan for the Seonakdong River system made by Lee et al (2008), simulation have been performed about scenarios which contains operations of the Daejeo Gate, the Noksan Gate, the Makdo Gate (on planning), and the Noksan Pumping Station. Because there is no option for elution from bed sediment in the RMA4 model, a simple technique has been used for initial condition modification for elution. The analyses revealed that the effect on water quality improvement due to dredging of bed sediment seemed to be less than 10 % of the total effect. The most efficient measure for the water quality improvement of the river system was the linked operation of water-gates and pumping station.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.99-102
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• 2005

In the paper, a proposed VCO based on bondwire inductances and nMOS varactors was implemented in a standard $0.25\;{\mu}m$ CMOS process. Using the new drain current model and a propagation delay time model equations, the operation speed of CMOS gate will predict the dependence on the load capacitance and the depth of oxide, threshold voltage, the supply voltage, the channel length. This paper describes the result of simulation which calculated a gate propagation delay time by using new drain current model and a propagation delay time model. At the result, When the reverse bias voltage on the substrate changes from 0 voltage to 3 voltage, the propagation delay time is appeared the delay from 0.8 nsec to 1 nsec. When the reverse voltage is biased on the substrate, for reducing the speed delay time, a supply voltage has to reduce. The $g_m$ value of MOSFET is calculated by using new drain current model.

• Journal of Power Electronics
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• v.18 no.6
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• pp.1901-1911
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• 2018

This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 1998.10a
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• pp.107-115
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• 1998

For the purpose of building the simulation model on cargo handling capacity of container terminal, we composed a model of container logistics system which has a 4 subsystems ; cargo handling, transportation, storage system and Gate complex system. Several date used in simulation gained through spot research and basic statistic analysis using raw data from January to Jane in 1998. The results of this study are as follows ; First, average available ratio of each subsystem was G/C 50%, Y/T 57.5%, storage system 56%, Gate complex 50%, and there was no subsystem occurring specific bottleneck. Second, comparing the results of simulation to the results of basic statistics, we can verify suitability of this simulation model. Third, Comparing the results of this study to the results of existed study, we were able to confirm a change of BCTOC container logistics system under IMF situation.

• Journal of Korean Port Research
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• v.12 no.2
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• pp.251-260
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• 1998

For the purpose of building the simulation model on cargo handling capacity in container terminal we composed a model of container logistics system which has a 4 subsystem; cargo handling transportation storage and gate complex system. Several data are used in simulation which were gained through a field study and a basic statistic analysis of raw data on BCTOC from January to Jane in 1998. The results of this study are as follows; First average available ratios of each subsystems were 50% for G/C, 57.5% for Y/T, 56% for storage system and 50% for gate complex. And there were no subsystems occurring specific bottleneck. Second comparing the results of simulation to the results of basic statistics analysis we can verifying the suitability of this simulation model. Third comparing the results of this study to the results of existed similar study in 1996, we were able to confirm the changes of container logistics system in BCTOC.