• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• 한국항해항만학회지
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• 제40권6호
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• pp.421-430
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• 2016

컨테이너 터미널에서 육상 운송을 담당하는 트럭 운송사 입장에서의 트럭 대기 시간을 줄이기 위한 게이트 시뮬레이션 모델을 개발하였다. 개발 모델의 검증을 위하여 부산신항 P항만을 대상으로 2014년 12월의 4주간 트럭 진출입 자료를 적용한 결과, 99% 이상의 정확성을 보였다. 또한, 개발한 시뮬레이션 모델을 통해 기존 게이트 시스템과 최근 게이트 시스템을 비교해 보았다. 결과적으로 동쪽 진입 게이트 기준으로 기존 게이트 시스템에서는 최대 50대의 트럭 대기와 120분의 대기 시간이 발생하였으나, 신규 게이트 시스템에서는 최대 10대의 트럭 대기와 5.3분의 대기 시간이 소요되었다. 서쪽 진입 게이트 기준으로 기존 게이트 시스템에서는 최대 17대의 트럭 대기와 34분의 대기 시간이 발생하였으나, 신규 게이트 시스템에서는 최대 10대의 트럭 대기와 5.3분의 대기 시간이 소요되었다. 서쪽 진출 게이트 기준으로 기존 게이트 시스템에서는 최대 11대의 트럭 대기와 5.5분의 대기 시간이 발생하였으나, 신규 게이트 시스템에서는 최대 9대의 트럭 대기와 4.4분의 대기 시간이 소요되었다. 본 개발 모델을 통하여 각 게이트의 트럭당 진출입 처리 시간에 따라 어느 정도의 트럭 대기가 발생하는지를 파악할 수 있게 되었다. 또한, 각 게이트에서 트럭 진출입에 따른 트럭당 처리 시간을 여러 시나리오별로 시뮬레이션하여 트럭의 대기가 발생되지 않는 최적 게이트 시스템의 운영 기준을 찾는데 활용될 수 있다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권5호
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• pp.500-510
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• 2013

In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.2014-2020
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• 2017

A compact current model applicable to both single-gate (SG) and double-gate (DG) tunneling field-effect transistors (TFETs) is presented. The model is based on Kane's band-to-band tunneling (BTBT) model. In this model, the well-known and previously-reported quasi-2-D solution of Poisson's equation is used for the surface potential and length of the tunneling path in the tunneling region. An analytical tunneling current expression is derived from expressions of derivatives of local electric field and surface potential with respect to tunneling direction. The previously reported correction factor with three fitting parameters, compensating for superlinear onset and saturation current with drain voltage, is used. Simulation results of the proposed TFET model are compared with those from a technology computer-aided-design (TCAD) simulator, and good agreement in all operational bias is demonstrated. The proposed SG/DG-TFET model is developed with Verilog-A for circuit simulation. A TFET inverter is simulated with the Verilog-A SG/DG-TFET model in the circuit simulator; the model exhibits typical inverter characteristics, thereby confirming its effectiveness.

• 한국농공학회지
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• 제45권1호
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• pp.91-101
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• 2003

Boryeong Seadike located at southwestern seashore of Korean peninsula completed in 1997. Sluice gate operation can be an important factor to maintain lake water quality and reduce retaining time of pollutants within lake. The lake water quality simulation model, WASPS was adopted and tested to find out proper gate operation timing and discharge amount. From the simulation of sluice gate operation, the results showed that the later the time of discharge for loosing 1 day successively to 6 days, the better the quality of water. Discharge amount showed relatively minor changes of water quality. This means that pollutants flowed into lake from watershed do not have enough time to mix up with deep water when the gate opened at early time. About 3 days delay of discharge caused the dilution effect to stabilize the lake water quality in case of Boryeong freshwater lake.

• Water Engineering Research
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• 제3권1호
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• pp.57-62
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• 2002

This research is intended to integrate long-term operation rules and real time operation policy for conservation & flood control in a reservoir. The familiar Yield model has been modified and used to provide long-term rule curves. The model employs linear programming technique under given physical conditions, i.e., total capacity, dead storage, spillways, outlet capacity and their respective elevations to find required and desired minimum storage fur different demands. To investigate the system behavior resulting from the above-mentioned operating policy, i.e., the rule curves, the simulation model was used. Results of the simulation model show that the results of the optimization model are indeed valid. After confirmation of the above mentioned rule curves by the simulation models, gate operation procedure was merged with the long term operation rules to determine the optimum reservoir operating policy. In the gate operation procedure, operating policy in downstream flood plain, i.e., determination of damaging and non-damaging discharges in flood plain, peak floods, which could be routed by reservoir, are determined. Also outflow hydrograph and variations of water surface levels for two known hydrographs are determined. To examine efficiency of the above-mentioned models and their ability in determining the optimum operation policy, Esteghlal reservoir in Iran was analyzed as a case study. A numerical model fur the solution of two-dimensional dam break problems using fractional step method is developed on unstructured grid. The model is based on second-order Weighted Averaged Flux(WAF) scheme with HLLC approximate Riemann solver. To control the nonphysical oscillations associated with second-order accuracy, TVD scheme with SUPERBEE limiter is used. The developed model is verified by comparing the computational solutions with analytic solutions in idealized test cases. Very good agreements have been achieved in the verifications.

• 상하수도학회지
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• 제21권1호
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• pp.101-112
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• 2007

This study has used RMA2 model and RMA4 model, which are depth-averaged two-dimensional flow and water-quality prediction models, to analyze the variation of the water-quality by the gates operation in the Seonakdong River. Sensitivity analysis is performed to get the Manning coefficient and the coefficient of eddy viscosity for RMA2 model, and to get the diffusion coefficient for RMA4 model. Since the numerical simulation using RMA2 and RMA4 models did not consider tributary pollutant load except for that of Joman River, it could make a little difference from the natural phenomenon. Nevertheless, the numerical simulation shows that the discharge of $30m^3/s$, which is the continuous inflow from the Daedong-gate, can make it possible to achieve the target water-quality (BOD 4.3mg/L) of Nakbon-N watershed about 10 days later if the Daejeo-gate could remain opened in connection with the Noksan-gate operation.

• 센서학회지
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• 제24권5호
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• 한국환경과학회지
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• 제20권9호
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• pp.1151-1163
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• 2011

The bed change analysis near the opening gate of a dam or weir to release deposited sediments have been conducted mostly using the numerical models. However, the use of unverified input parameters in the numerical model is able to produce the different results with natural and real conditions. Also, the bed changes near the opening gate of a dam or weir calculated with a numerical model could be varied depending on the geometry extent included the downstream area with supercritical flow in the model. In addition, the different time steps could provide different results in the bed change calculation, even though other conditions such as input parameters, geometries, and total simulation time were same. Therefore, in this study, hydraulic experiments were performed to validate the eddy viscosity coefficient which is the one of important input parameters in the RMA2 model and relevant to variation of simulation results. The bed changes were calculated using the SED2D model based on flow results calculated in the RMA2 model with the verified and selected eddy viscosity coefficient and also compared with experimental results. The bed changes near the opening gate were underestimated in the numerical model comparing with experimental results except only the numerical case without the modeling section of sediment release pipe and downstream area where the supercritical flow was produced. For the simulation of minimum time steps, different shapes of scour hole were produced in numerical and physical modeling.