• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.1119-1122
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• 2000

This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

• Journal of Navigation and Port Research
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• v.40 no.6
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• pp.421-430
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• 2016

In this study, a gate simulation model was developed to reduce the truck waiting time for trucking companies servicing container terminals. To verify the developed model, 4 weeks of truck gate-in/gate-out data was collected in December 2014 at the Port of Busan New Port. Also, the existing gate system was compared to the proposed gate system using the developed simulation model. The result showed that based on East gate-in, a maximum number of 50 waiting trucks with a maximum waiting time of 120 minutes. With the proposed system the maximum number of waiting trucks was 10 with a maximum waiting time of 5.3 minutes. Based on West gate-in, the maximum number of waiting trucks was 17 and the maximum waiting time was 34 minutes in the existing gate system. With the proposed system the maximum number of waiting trucks was 10 with a maximum waiting time of 5.3 minutes. Based on West gate-out, the maximum number of waiting trucks was 11 with a maximum waiting time of 5.5 minutes. With the proposed system the maximum number of waiting trucks was 9 with a maximum waiting time of 4.4 minutes. This developed model shows how many waiting trucks there are, depending on the gate-in/gate-out time of each truck. This system can be used to find optimal gate system operating standards by assuming and adjusting the gate-in/gate-out time of each truck in different situations.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.500-510
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• 2013

In this paper, a high-sensitivity low power photodetector using double gate (DG) MOSFET is proposed for the first time using change in subthreshold current under illumination as the sensitivity parameter. An analytical model for optically controlled double gate (DG) MOSFET under illumination is developed to demonstrate that it can be used as high sensitivity photodetector and simulation results are used to validate the analytical results. Sensitivity of the device is compared with conventional bulk MOSFET and results show that DG MOSFET has higher sensitivity over bulk MOSFET due to much lower dark current obtained in DG MOSFET because of its effective gate control. Impact of the silicon film thickness and gate stack engineering is also studied on sensitivity.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of Electrical Engineering and Technology
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• v.12 no.5
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• pp.2014-2020
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• 2017

A compact current model applicable to both single-gate (SG) and double-gate (DG) tunneling field-effect transistors (TFETs) is presented. The model is based on Kane's band-to-band tunneling (BTBT) model. In this model, the well-known and previously-reported quasi-2-D solution of Poisson's equation is used for the surface potential and length of the tunneling path in the tunneling region. An analytical tunneling current expression is derived from expressions of derivatives of local electric field and surface potential with respect to tunneling direction. The previously reported correction factor with three fitting parameters, compensating for superlinear onset and saturation current with drain voltage, is used. Simulation results of the proposed TFET model are compared with those from a technology computer-aided-design (TCAD) simulator, and good agreement in all operational bias is demonstrated. The proposed SG/DG-TFET model is developed with Verilog-A for circuit simulation. A TFET inverter is simulated with the Verilog-A SG/DG-TFET model in the circuit simulator; the model exhibits typical inverter characteristics, thereby confirming its effectiveness.

• Magazine of the Korean Society of Agricultural Engineers
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• v.45 no.1
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• pp.91-101
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• 2003

Boryeong Seadike located at southwestern seashore of Korean peninsula completed in 1997. Sluice gate operation can be an important factor to maintain lake water quality and reduce retaining time of pollutants within lake. The lake water quality simulation model, WASPS was adopted and tested to find out proper gate operation timing and discharge amount. From the simulation of sluice gate operation, the results showed that the later the time of discharge for loosing 1 day successively to 6 days, the better the quality of water. Discharge amount showed relatively minor changes of water quality. This means that pollutants flowed into lake from watershed do not have enough time to mix up with deep water when the gate opened at early time. About 3 days delay of discharge caused the dilution effect to stabilize the lake water quality in case of Boryeong freshwater lake.

• Water Engineering Research
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• v.3 no.1
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• pp.57-62
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• 2002

This research is intended to integrate long-term operation rules and real time operation policy for conservation & flood control in a reservoir. The familiar Yield model has been modified and used to provide long-term rule curves. The model employs linear programming technique under given physical conditions, i.e., total capacity, dead storage, spillways, outlet capacity and their respective elevations to find required and desired minimum storage fur different demands. To investigate the system behavior resulting from the above-mentioned operating policy, i.e., the rule curves, the simulation model was used. Results of the simulation model show that the results of the optimization model are indeed valid. After confirmation of the above mentioned rule curves by the simulation models, gate operation procedure was merged with the long term operation rules to determine the optimum reservoir operating policy. In the gate operation procedure, operating policy in downstream flood plain, i.e., determination of damaging and non-damaging discharges in flood plain, peak floods, which could be routed by reservoir, are determined. Also outflow hydrograph and variations of water surface levels for two known hydrographs are determined. To examine efficiency of the above-mentioned models and their ability in determining the optimum operation policy, Esteghlal reservoir in Iran was analyzed as a case study. A numerical model fur the solution of two-dimensional dam break problems using fractional step method is developed on unstructured grid. The model is based on second-order Weighted Averaged Flux(WAF) scheme with HLLC approximate Riemann solver. To control the nonphysical oscillations associated with second-order accuracy, TVD scheme with SUPERBEE limiter is used. The developed model is verified by comparing the computational solutions with analytic solutions in idealized test cases. Very good agreements have been achieved in the verifications.

• Journal of Korean Society of Water and Wastewater
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• v.21 no.1
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• pp.101-112
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• 2007

This study has used RMA2 model and RMA4 model, which are depth-averaged two-dimensional flow and water-quality prediction models, to analyze the variation of the water-quality by the gates operation in the Seonakdong River. Sensitivity analysis is performed to get the Manning coefficient and the coefficient of eddy viscosity for RMA2 model, and to get the diffusion coefficient for RMA4 model. Since the numerical simulation using RMA2 and RMA4 models did not consider tributary pollutant load except for that of Joman River, it could make a little difference from the natural phenomenon. Nevertheless, the numerical simulation shows that the discharge of $30m^3/s$, which is the continuous inflow from the Daedong-gate, can make it possible to achieve the target water-quality (BOD 4.3mg/L) of Nakbon-N watershed about 10 days later if the Daejeo-gate could remain opened in connection with the Noksan-gate operation.

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.353-357
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• 2015

A new SPICE-compatible model for a gate/body-tied PMOSFET photodetector (GBT PD) with an overlapping control gate is presented. The proposed SPICE-compatible model of a GBT PD with an overlapping control gate makes it possible to control the photocurrent. Research into GBT PD modeling was proposed previously. However, the analysis and simulation of GBT PDs is not lacking. This SPICE model concurs with the measurement results, and it is simpler than previous models. The general GBT PD model is a hybrid device composed of a MOSFET, a lateral bipolar junction transistor (BJT), and a vertical BJT. Conventional SPICE models are based on complete depletion approximation, which is more applicable to reverse-biased p-n junctions; therefore, they are not appropriate for simulating circuits that are implemented with a GBT PD with an overlapping control gate. The GBT PD with an overlapping control gate can control the sensitivity of the photodetector. The proposed sensor is fabricated using a $0.35{\mu}m$ two-poly, four-metal standard complementary MOS (CMOS) process, and its characteristics are evaluated.

• Journal of Environmental Science International
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• v.20 no.9
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• pp.1151-1163
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• 2011

The bed change analysis near the opening gate of a dam or weir to release deposited sediments have been conducted mostly using the numerical models. However, the use of unverified input parameters in the numerical model is able to produce the different results with natural and real conditions. Also, the bed changes near the opening gate of a dam or weir calculated with a numerical model could be varied depending on the geometry extent included the downstream area with supercritical flow in the model. In addition, the different time steps could provide different results in the bed change calculation, even though other conditions such as input parameters, geometries, and total simulation time were same. Therefore, in this study, hydraulic experiments were performed to validate the eddy viscosity coefficient which is the one of important input parameters in the RMA2 model and relevant to variation of simulation results. The bed changes were calculated using the SED2D model based on flow results calculated in the RMA2 model with the verified and selected eddy viscosity coefficient and also compared with experimental results. The bed changes near the opening gate were underestimated in the numerical model comparing with experimental results except only the numerical case without the modeling section of sediment release pipe and downstream area where the supercritical flow was produced. For the simulation of minimum time steps, different shapes of scour hole were produced in numerical and physical modeling.