• Proceedings of the KIPE Conference
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• 2012.07a
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• pp.230-231
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• 2012

This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.6
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• pp.429-436
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• 2021

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

• Journal of the Korean Society for Railway
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• v.20 no.3
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• pp.339-348
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• 2017

Power supply for railway cars can be divided into propulsion system power supply and auxiliary power units (APU). The propulsion system power supply is for propulsion of railway cars, and regenerative braking; the APU provides power for the air compressor, lighting, car control and other auxiliary parts. According to high voltage and high current specifications, generally, an insulated-gate bipolar transistor (IGBT) is adopted for the switching component. For appropriate switching operation, a gate driver unit (GDU) is essentially required. In this paper, the technical trends of GDU for railway cars are analyzed and a design consideration for IGBT GDU is described.

• The Journal of the Korea institute of electronic communication sciences
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• v.14 no.1
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• pp.87-96
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• 2019

Flexible organic light-emitting diode (OLED) displays with organic thin-film transistors (OTFTs) backplanes have been studied. A gate driver is required to drive the OLED display. The gate driver is integrated into the panel to reduce the manufacturing cost of the display panel and to simplify the module structure using fabrication methods based on low-temperature, low-cost, and large-area printing processes. In this paper, pseudo complementary metal oxide semiconductor (CMOS) logic gates are implemented using OTFTs for the gate driver integrated in the flexible OLED display. The pseudo CMOS inverter and NAND gates are designed and fabricated on a flexible plastic substrate using inkjet-printed OTFTs and the same process as the display. Moreover, the operation of the logic gates is confirmed by measurement. The measurement results show that the pseudo CMOS inverter can operate at input signal frequencies up to 1 kHz, indicating the possibility of the gate driver being integrated in the flexible OLED display.

• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.1304-1306
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• 1996

A regenerative signal amplifying gate driver of self-excited electronic ballast is presented. It can be used for high pressure sodium (HPS) lamp without auxiliary external ignitor. Since the HPS lamp requires very high ignition voltage at start up, the resonant frequency of the circuit must be increased to obtain high voltage oscillations in spite of relatively small resonant current. The presented gate driver amplifies the current of gate drive transformer and raises the gate-source voltage Quickly to turn on the MOSFET switches. Hence, the resonant frequency can be increased more than 100kHz. The HPS lamp used in the simulation and experiment has the rating of 400W input power at 220V input ac voltage source. The experiments show that the resonant frequency is above 150kHz at start up.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.1
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• pp.1-7
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• 2012

We have developed a new gate driver circuit for liquid crystal displays using oxide thin-film transistors (TFTs). In the new gate driver, negative gate bias is applied to turn off the oxide TFTs because the oxide TFT occasionally has negative threshold voltage (VT). In addition, we employed three parallel pull-down TFTs that are turned on in turns to enhance the stability. SPICE simulation showed that the proposed circuit worked successfully covering the VT range of -3 V ~ +6 V And fabrication results confirmed stable operation of the new circuit using oxide TFTs.

• ETRI Journal
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• v.37 no.6
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• pp.1176-1187
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• 2015

This work proposes a highly efficient sensorless motor driver chip for various permanent-magnet synchronous motors (PMSMs) in a wide power range. The motor driver chip is composed of two important parts. The digital part is a sensorless controller consisting mainly of an angle estimation block and a speed control block. The analog part consists of a gate driver, which is able to sense the phase current of a motor. The sensorless algorithms adapted in this paper include a sliding mode observer (SMO) method that has high robust characteristics regarding parameter variations of PMSMs. Fabricated SMO chips detect back electromotive force signals. Furthermore, motor current-sensing blocks are included with a 10-bit successive approximation analog-to-digital converter and various gain current amplifiers for proper sensorless operations. Through a fabricated SMO chip, we were able to demonstrate rated powers of 32 W, 200 W, and 1,500 W.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1176-1178
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• 2007

A novel integrated a-Si:H gate driver with high reliability has been designed and simulated. Since the a-Si:H TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift. The conventional circuit shows voltage drop at the input stage by threshold voltage of the TFT, however, the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.855-858
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• 1998

Many semiconductive switches are operated in series for high voltage operation. The same number of gate drivers are needed to control all the switches, hence, the drivers cause high cost and system complexity. In this study, a simple and low cost gate driver for high voltage thyristor diode switches is investigated. This gate driver can operate several high voltage thyristor diode switches at the same time.

• Proceedings of the KIEE Conference
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• 1998.07f
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• pp.2133-2135
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• 1998

Many semiconductive switches are operated in series for high voltage operation. The same number of gate drivers are needed to control all the switches, hence, the drivers cause high cost and system complexity. In this study, a simple and low cost gate driver for high voltage thyristor-diode switches is investigated. This gate driver can operate several high voltage thyristor-diode switches at the same time.