• 제목/요약/키워드: Gate Design

검색결과 1,594건 처리시간 0.029초

Gate Workfunction Optimization of a 32 nm Metal Gate MOSFET for Low Power Applications

  • Oh Yong-Ho;Kim Young-Min
    • Journal of Electrical Engineering and Technology
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    • 제1권2호
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    • pp.237-240
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    • 2006
  • The feasibility of a midgap metal gate is investigated for a 32 nm MOSFET for low power applications. The midgap metal gate MOSFET is found to deliver $I_{on}$ as high as a bandedge gate if a proper retrograde channel is used. An adequate design of the retrograde channel is essential to achieve the performance requirement given in the ITRS roadmap. A process simulation is also run to evaluate the feasibility of the necessary retrograde profile in manufacturing environments. Based on the simulated result, it is found that any subsequent thermal process should be tightly controlled to retain transistor performance, which is achieved using the retrograde doping profile. Also, the bandedge gate MOSFET is determined be more vulnerable to the subsequent thermal processes than the midgap gate MOSFET. A guideline for gate workfunction $(\Phi_m)$ is suggested for the 32 nm MOSFET.

고속 스윗징을 위한 새로운 GTO 구동기법 (A New GTO Driving Technique for Faster Switching)

  • Kim, Young-Seok;Seo, Beom-Seok;Hyun, Dong-Seok
    • 대한전기학회논문지
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    • 제43권2호
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    • pp.244-250
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    • 1994
  • This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.

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A study on efficient gate system based RFID at the container terminal

  • Kim, Hyun;Kim, Yul-Seong
    • 한국항해항만학회지
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    • 제30권4호
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    • pp.277-283
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    • 2006
  • It is a world trend to construct large terminal and develop automated container terminal to attract Super Post-Panamax and provide service which is based on differentiation. In fact, there is insufficient research for automatization of terminal gate since the automatization of current constructed container terminal is only focused on increasing productivity and unmanned system through the automatization of quay, yard, etc. In this paper, we have investigated advantage/disadvantage of existing gate operation systems and compared each gate operation system in the aspect of raising terminal image and the productivity. For the specific study, we have used data from actual terminal gate operation and RFID model business sponsored by MOMAF (Ministry of Maritime Affairs and Fisheries). As a result, this paper carried out an efficient gate operation system and it has been expected that it will be performed as groundwork of automated gate operation system which is for design of container terminal and improvement of gate operation system.

양극성 이중 독립 게이트 실리콘 나노와이어 전계 효과 트랜지스터 설계 (Design of Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor)

  • 홍성현;유윤섭
    • 한국정보통신학회논문지
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    • 제19권12호
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    • pp.2892-2898
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    • 2015
  • 양극성 이중 독립 게이트 실리콘 나노와이어 전계 효과 트랜지스터를 새롭게 제안한다. 제안한 트랜지스터는 극성 게이트와 제어 게이트를 가지고 있다. 극성게이트의 바이어스에 따라서 N형과 P형 트랜지스터의 동작을 결정할 수 있고 제어 게이트의 전압에 따라 트랜지스터의 전류 특성을 제어할 수 있다. 2차원 소자 시뮬레이터를 이용해서 양극성 전류-전압 특성이 동작하도록 두 개의 게이트들과 소스 및 드레인의 일함수를 조사했다. 극성게이트 4.75 eV, 제어게이트 4.5 eV, 소스 및 드레인 4.8 eV일 때 명확한 양극성 특성을 보였다.

Smartphone Color-Code based Gate Security Control

  • Han, Sukyoung;Lee, Minwoo;Mariappan, Vinayagam;Lee, Junghoon;Lee, Seungyoun;Lee, Juyoung;Kim, Jintae;Cha, Jaesang
    • International journal of advanced smart convergence
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    • 제5권3호
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    • pp.66-71
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    • 2016
  • Smart building gate security control system using smartphone integrated with near field communication (NFC) has become part of daily life usage these days. The technology change in replacing RF NFC device using visible light communication technology based approach growing faster in recent days. This paper propose a design and development of gate security control system using color code based user authentication ID generation as part of an intelligent access control system to control automatic door open and close. In this approach gate security access control use the recent visible light communication technology trends to transfer the user specific authentication code to door access control system using color code on smartphone screen. Using a camera in the door access control system (ACS), color codes on smartphone screens are detected and matched to the database of authenticated user to open the door automatically in gate security system. We measure the visual light communication technology efficiency as a part of the research and the experiments have revealed that more than 95% users authenticated correctly at the suggested experiment environment on gate security control system.

A Study on the Design of Gating System for Semi-Solid Diecasting Process

  • Park, Chul-Woo;Kim, Young-Ho
    • International Journal of Precision Engineering and Manufacturing
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    • 제4권2호
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    • pp.39-48
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    • 2003
  • In the Semi-Solid Diecasters design, a Seni-Solid Diecasters experiment has usually been carried out before producing new casts. At the Semi-Solid Diecasting stages, the runner-gate part has been always repeatedly corrected, which leads to a tedious processing time and high processing cost. Much experience is essential in manual assessment and if the design is defective, much time and a great deal of efforts will be wasted in the modification of the die. In this study, a design system has been developed based on the design database In addition, a gate experiment for the gating system design has been tarried out to append the database. It is possible for engineers to make efficient gating system design of Semi-Solid Diecasting and it will result in the reduction of expenses and time to be required.

유동해석을 이용한 자동차용 부품(오일팬_DX2E)의 주조방안설계에 대한 사례연구 (A Case Study on Casting Layout Design of Automotive Oil Pan_DX2E Using Computer Simulation)

  • 권홍규
    • 산업경영시스템학회지
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    • 제36권4호
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    • pp.71-76
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    • 2013
  • For a die casting mold, generally, the casting layout design should be considered based on the relation among injection system, casting condition, gate system, and cooling system. Also, the extent or the location of product defects was differentiated according to the various relations of the above conditions. In this research, in order to optimize the casting layout design of an automotive Oil Pan_DX2E, Computer Aided Engineering (CAE) simulation was performed with two layout designs by using the simulation software (AnyCasting). The simulation results were analyzed and compared carefully in order to apply them into the production die-casting mold. During the filling process with two models, internal porosities caused by air entrapments were predicted and also compared with the modification of the gate system and overflow. With the solidification analysis, internal porosities occurring during the solidification process were predicted and also compared with the modified gate system.

대면적 고화질의 TFT-LCD 화소 설계 최적화 및 어레이 시뮬레이션 특성 (Array Simulation Characteristics and TFT-LCD Pixel Design Optimization for Large Size, High Quality Display)

  • 이영삼;윤영준;정순신;최종선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.137-140
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    • 1998
  • An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

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A Novel Design of Low Noise On-panel TFT Gate Driver

  • Deng, Er Lang;Shiau, Miin Shyue;Huang, Nan Xiong;Liu, Don Gey
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1305-1308
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    • 2008
  • In this study, we redesigned the reliable integrated on-panel display gate driver that was equipped with dual pull-down as well as controlled discharge-path structure to reduce the high voltage stress effect and realized with TSMC 0.35 um CMOS-based technology before. An improved discharge path and a low noise design are proposed for our new a-Si TFT process implementation. Our novel reliable gate driver design can make each cell of shift register to be insensitive to the coupling noise of that stage.

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소형 수문용 랙-피니언의 접촉 피로수명 (Contact Fatigue Life of Rack-Pinion for Small-Sized Sluice Gate)

  • 권순만
    • 한국생산제조학회지
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    • 제26권3호
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    • pp.299-305
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    • 2017
  • Gate-lifting devices in small- to mid-sized sluice gates mostly employ the mechanical roller rack pinion (RRP) system. This RRP system, which consists of a rack-bar and a pinion, transforms a rotation motion into a linear one. The rack-bar has a series of roller trains that mesh with the pinion. In this study, we adopt an exact involute-trochoid tooth profile of the pinion to obtain a higher contact fatigue strength using the profile modification coefficient. Further, we determine the contact forces and investigate Hertz contact stresses to predict the pitting life of the pinion according to varying the shape design parameters. The results indicate that the design fatigue life of an RRP system for sluice gate can be achieved only when the design value of the profile modification coefficient reaches or exceeds a certain level.