• Journal of Welding and Joining
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• v.25 no.3
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• pp.28-36
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• 2007

A bulk amorphous NiTiZrSiSn powder produced using an inert gas atomization was sprayed by kinetic spraying process that is basically a solid-state deposition process onto a mild steel substrate. They were successfully overlaid onto the mild steel substrate. In order to evaluate the tribological behavior of the kinetic sprayed NiTiZrSiSn BMG (Bulk Metallic Glass) coatings, a partially crystallized coating and a fully crystallized coating were prepared by the isothermal heat treatments. Tribological behaviors were investigated in view of friction coefficient, hardness and amorphous phase fraction of coating layer. Surface morphologies and depth in the wear tracks were observed and measured by scanning electron microscope and alpha-step. From the examination of the scratch wear track microstructure, transition from the ductile like deformation (micro cutting) to the brittle deformation (micro fracturing) in the scratch groove was observed with the increase of the crystallinity.

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.81-88
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• 1997

We investigated the CVPE grown of GaN thin films on (0001) sapphire using the $GaCl_3$ and $NH_3$ as source gases. The growth temperatures are ranged 970 to $1040^{\circ}C$ with the various flow rate ratio of source gases. The nitridation treatment was performed using the $NH_3$ gas before the GaN deposition. The optimal growth conditions were determined to be; growth temperature of $1040^{\circ}C$, III/V flow rate ratio of 2, nitridation time of 3 min. The FWHM at the (0002) peak from the XRD analysis was shown to be 0.32 deg. for the sample grown under those conditions. The growth rate was about $40{\mu}m/hr$ at $1040^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.519-523
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• 2013

When atomic layer deposition (ALD) is performed on a porous material by using an organometallic precursor, minimum exposure time of the precursor for complete coverage becomes much longer since the ALD is limited by Knudsen diffusion in the pores. In the previous report by Min et al. (Ref. 23), shrinking core model (SCM) was proposed to predict the minimum exposure time of diethylzinc for ZnO ALD on a porous cylindrical alumina monolith. According to the SCM, the minimum exposure time of the precursor is influenced by volumetric density of adsorption sites, effective diffusion coefficient, precursor concentration in gas phase and size of the porous monolith. Here we modify the SCM in order to consider undesirable adsorption of byproduct molecules. $TiO_2$ ALD was performed on the cylindrical alumina monolith by using titanium tetrachloride ($TiCl_4$) and water. We observed that the byproduct (i.e., HCl) of $TiO_2$ ALD can chemically adsorb on adsorption sites, unlike the behavior of the byproduct (i.e., ethane) of ZnO ALD. Consequently, the minimum exposure time of $TiCl_4$ (~16 min) was significantly much shorter than that (~71 min) of DEZ. The predicted minimum exposure time by the modified SCM well agrees with the observed time. In addition, the modified SCM gives an effective diffusion coefficient of $TiCl_4$ of ${\sim}1.78{\times}10^{-2}\;cm^2/s$ in the porous alumina monolith.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.58.2-58.2
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• 2012

Heavy hydrocarbon reforming is a core technology for "Dirty energy smart". Heavy hydrocarbons are components of fossil fuels, biomass, coke oven gas and etc. Heavy hydrocarbon reforming converts the fuels into $H_2$-rich syngas. And then $H_2$-rich syngas is used for the production of electricity, synthetic fuels and petrochemicals. Energy can be used efficiently and obtained from various sources by using $H_2$-rich syngas from heavy hydrocarbon reforming. Especially, the key point of "Dirty energy smart" is using "dirty fuel" which is wasted in an inefficient way. New energy conversion laboratory of KAIST has been researched diesel reforming for solid oxide fuel cell (SOFC) as a part of "Dirty energy smart". Diesel is heavy hydrocarbon fuels which has higher carbon number than natural gas, kerosene and gasoline. Diesel reforming has difficulties due to the evaporation of fuels and coke formation. Nevertheless, diesel reforming technology is directly applied to "Dirty fuel" because diesel has the similar chemical properties with "Dirty fuel". On the other hand, SOFC has advantages on high efficiency and wasted heat recovery. Nippon oil Co. of Japan recently commercializes 700We class SOFC system using city gas. Considering the market situation, the development of diesel reformer has a great ripple effect. SOFC system can be applied to auxiliary power unit and distributed power generation. In addition, "Dirty energy smart" can be realized by applying diesel reforming technology to "Dirty fuel". As well as material developments, multidirectional approaches are required to reform heavy hydrocarbon fuels and use $H_2$-rich gas in SOFC. Gd doped ceria (CGO, $Ce_{1-x}Gd_xO_{2-y}$) has been researched for not only electrolyte materials but also catalysts supports. In addition, catalysts infiltrated electrode over porous $La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2}O_3-{\delta}$ and catalyst deposition at three phase boundary are being investigated to improve the performance of SOFC. On the other hand, nozzle for diesel atomization and post-reforming for light-hydrocarbons removal are examples of solving material problems in multidirectional approaches. Likewise, multidirectional approaches are necessary to realize "Dirty energy smart" like reforming "Dirty fuel" for SOFC.

• Nano
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• v.13 no.10
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• pp.1850124.1-1850124.12
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• 2018

$TiO_2$ films were deposited from oxygen/titanium tetraisopropoxide (TTIP) plasmas at low temperature by Helicon-PECVD at floating potential ($V_f$) or substrate self-bias of -50 V. The influence of titanium precursor partial pressure on the morphology, nanostructure and optical properties was investigated. Low titanium partial pressure ([TTIP] < 0.013 Pa) was applied by controlling the TTIP flow rate which is introduced by its own vapor pressure, whereas higher titanium partial pressure was formed through increasing the flow rate by using a carrier gas (CG). Then the precursor partial pressures [TTIP+CG] = 0:027 Pa and 0.093 Pa were obtained. At $V_f$, all the films exhibit a columnar structure, but the degree of inhomogeneity is decreased with the precursor partial pressure. Phase transformation from anatase ([TTIP] < 0.013 Pa) to amorphous ([TTIP+CG] = 0:093 Pa) has been evidenced since the $O^+_2$ ion to neutral flux ratio in the plasma was decreased and more carbon contained in the film. However, in the case of -50 V, the related growth rate for different precursor partial pressures is slightly (~15%) decreased. The columnar morphology at [TTIP] < 0.013 Pa has been changed into a granular structure, but still homogeneous columns are observed for [TTIP+CG] = 0:027 Pa and 0.093 Pa. Rutile phase has been generated at [TTIP] < 0:013 Pa. Ellipsometry measurements were performed on the films deposited at -50 V; results show that the precursor addition from low to high levels leads to a decrease in refractive index.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.1-7
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• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1155-1159
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• 1999

Thin film solar cells on a glass/$SnO_2$ substrate with p-SiC/i-Si/n-Si heterojunction structures were fabricated using a plasma-enhanced chemical-vapor deposition system. The photovoltaic properties of the solar cells were examined with varying the gas phase composition, x=$CH_4/\;(SiH_4+CH_4)$, during the deposition of the p-SiC layer. In the range of x=0~0.4, the efficiency of solar cell increased because of the increased band gap of the p-SiC window layer. Further increase in the gas phase composition, however, led to a decrease in the cell efficiency probably due to in the increased composition mismatch at the p-SiC/i-Si layers. As a result, the efficiency of a glass/$SnO_2$/p-SiC/i-SiC/i-Si/n-Si/Ag thin film solar cell with $1cm^2$ area was 8.6% ($V_{oc}$=0.85V, $J_{sc}$=16.42mA/$cm^2$, FF=0.615) under 100mW/$cm^2$ light intensity.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.5
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• pp.81-86
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• 2019

Metal oxide/graphene composites have been known as promising functional materials for advanced applications such as high sensitivity gas sensor, and high capacitive secondary battery. In this study, tin dioxide ($SnO_2$) nanostructures were grown on chemically synthesized graphene nanosheets using a two-zone horizontal furnace system. The large area graphene nanosheets were synthesized on Cu foil by thermal chemical vapor deposition system with the methane and hydrogen gas. Chemically synthesized graphene nanosheets were transferred on cleaned $SiO_2$(300 nm)/Si substrate using the PMMA. The $SnO_2$ nanostuctures were grown on graphene nanosheets at $424^{\circ}C$ under 3.1 Torr for 3 hours. Raman spectroscopy was used to estimate the quality of as-synthesized graphene nanosheets and to confirm the phase of as-grown $SnO_2$ nanostructures. The surface morphology of as-grown $SnO_2$ nanostructures on graphene nanosheets was characterized by field-emission scanning electron microscopy (FE-SEM). As the results, the synthesized graphene nanosheets are bi-layers graphene nanosheets, and as-grown tin oxide nanostructures exhibit tin dioxide phase. The morphology of $SnO_2$ nanostructures on graphene nanosheets exhibits complex nanostructures, whereas the surface morphology of $SnO_2$ nanostructures on $SiO_2$(300 nm)/Si substrate exhibits simply nano-dots. The complex nanostructures of $SnO_2$ on graphene nanosheets are attributed to functional groups on graphene surface.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.9
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• pp.536-542
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• 2018

Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.