• Corrosion Science and Technology
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• v.18 no.5
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• pp.206-211
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• 2019

Silicon carbide (SiC) thin films become superhard when they have microstructures of nanocolumnar crystalline grains (NCCG) with an intergranular amorphous SiC matrix. We investigated the role of ion bombardment and deposition temperature in forming the NCCG in SiC thin films. A direct-current (DC) unbalanced magnetron sputtering method was used with pure Ar as sputtering gas to deposit the SiC thin films at fixed target power of 200 W and chamber pressure of 0.4 Pa. The Ar ion bombardment of the deposited films was conducted by applying a negative DC bias voltage 0-100 V to the substrate during deposition. The deposition temperature was varied between room temperature and $450^{\circ}C$. Above a critical bias voltage of -80 V, the NCCG formed, whereas, below it, the SiC films were amorphous. Additionally, a minimum thermal energy (corresponding to a deposition temperature of $450^{\circ}C$ in this study) was required for the NCCG formation. Transmission electron microscopy, Raman spectroscopy, and glancing angle X-ray diffraction analysis (GAXRD) were conducted to probe the samples' structural characteristics. Of those methods, Raman spectroscopy was a particularly efficient non-destructive tool to analyze the formation of the SiC NCCG in the film, whereas GAXRD was insufficiently sensitive.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.106-110
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• 2011

A high thermal conductive AlN composite coating is attractive in thermal management applications. In this study, AlN-YAG composite coatings were manufactured by atmospheric plasma spraying from two different powders: spray-dried and plasma-treated. The mixture of both AlN and YAG was first mechanically alloyed and then spray-dried to obtain an agglomerated powder. The spray-dried powder was primarily spherical in shape and composed of an agglomerate of primary particles. The decomposition of AlN was pronounced at elevated temperatures due to the porous nature of the spray-dried powder, and was completely eliminated in nitrogen environment. A highly spherical, dense AlN-YAG composite powder was synthesized by plasma alloying and spheroidization (PAS) in an inert gas environment. The AlN-YAG coatings consisted of irregular-shaped, crystalline AlN particles embedded in amorphous YAG phase, indicating solid deposition of AlN and liquid deposition of YAG. The PAS-processed powder produced a lower-porosity and higher-hardness AlN-YAG coating due to a greater degree of melting in the plasma jet, compared to that of the spray-dried powder. The amorphization of the YAG matrix was evidence of melting degree of feedstock powder in flight because a fully molten YAG droplet formed an amorphous phase during splat quenching.

• Journal of the Korean Ceramic Society
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• v.30 no.1
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• pp.46-54
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• 1993

$\beta$-SiC was chemically vapor deposited by pyrolysis of MTS＋H2 gas mixture. The experiments were conducted in the temperature range of 1100~150$0^{\circ}C$ with a r.f. induction furnace under atmospheric pressure. The IR, XRD, EDS and AES analysis revealed that the free Si was always codeposited with SiC below 140$0^{\circ}C$, regardless of the total flow rate and MTS concentration, whereas $\beta$-SiC single phase was deposited at 150$0^{\circ}C$. C3H8 or CH2Cl2 as an excess C sources, was supplied with MTS in order to obtain stoichiometric SiC at low temperature. With the addition of C3H8 or CH2Cl2, the deposition rate was increased and $\beta$-SiC single phase could be deposited even at temperature as low as 110$0^{\circ}C$. In the absence of C3H8 or CH2Cl2, the microhardness of the layer was quite low (

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Journal of ILASS-Korea
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• v.1 no.1
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• pp.28-34
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• 1996

Study on the mechanism of droplet transport and the droplet eddy diffusivity in the intake manifold of internal conbustion engine with carburetor has been carried out in this paper The theory and experiments were studied and performed respectively, to elucidate the mechanism and to measure typical rates of deposition, on the walls of a straight type intake manifold, of water droplets suspended in a turbulent air streams. Accordingly, the results are that Mechanism of a spray transport to the walls is caused by the fluctuation component of radial velocity. Deposition rate of a spray on the walls is mainly dependent upon air velocity and mean diameter of spray, and Droplet eddy diffusivity in the intake manifold is around $80\sim105cm^2/sec$.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.49-53
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• 1999

We have studied the field emission characteristics of diamond-like-carbon (DLC) films deposited by a layer-by-layer technique using plasma enhanced chemical vapor deposition, in which the deposition of a thin layer of DLC and a CH4 plasma exposure on its surface were carried out alternatively. The hydrogen-free DLC can be deposited by CH4 plasma exposure for 140 sec on a 5 nm DLC layer. N2 gas-phase doping in the CH4 plasma was also carried out to reduce the work function of the DLC. The optimum [N2]/[CH4] flow rate ratio was found to be 9% for the efficient electron emission, at which the onset-field was 7.2 V/$\mu\textrm{m}$. It was found that the hydrogen-free DLC has a stable electron emitting property.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.289-289
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• 2011

The conducting polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Terephthalaldehyde (TPA) and p-phenylenediamine (PD) were used as monomers to deposit conducting polymer. Self-terminating nature of TPA and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of conducting polymer thin films. Layer by layer growth and polymerization of thin films can be showed by shifting of absorption edge using UV-VIS spectroscopy. This conducting polymer fabricated by using MLD method gives the opportunity to develop new hybrid materials by combining inorganic materials in nanoscale.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.305-305
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• 2012

The organic-inorganic hybrid polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Titaniumchloride (TiCl4) and 1,4-phenylenediamine (PD) were used as monomers to deposit hybrid polymer. Self-terminating nature of TiCl4 and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of hybrid polymer thin films. Layer by layer growth was showed by increasing UV-VIS absorption peak of hybrid polymer thin films.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.83-86
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• 2003

YBa$_2$Cu$_3$$O_{7-x}$ thin films for coated conductor application were deposited on a MgO single crystalline substrate by a metal organic chemical vapor deposition (MOCVD) system of a vertical type using a single liquid source. The film uniformity was enhanced by controlling the gas shower head structure, the distance between the shower head and substrate, and the rotation of the substrate. The source mole ratio of Y(thd)$_3$: Ba(thd)$_2$: Cu(thd)$_2$ was changed for obtaining stoichiometric film. The phase formation, crystal orientation, surface morphology and film composition were investigated with different source mole ratios, and the critical temperature (T$_{c}$) was measured.red.