• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.177-180
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• 1999

In this paper, we studied Surface Discharge Type Flat Fluorescent Lamp(FFL) with High Luminance for LCD Backlighting. This lamp is Surface Discharge Type structure with a pair of Sodalime glass, insulator layer, phosphor layer, and Xe gas gap. There are two influences of Electric field on different dielectric thickness. The Electric field difference at the dielectric layer itself enhances minimum value of firing voltage and luminance uniformity. So, we measured the Electric filed at 0.5mm, 1mm gap length and discharge voltage for difference dielectric layer thickness. In experiment result, the thicker dielectric layer has higher firing voltage and lower current.

• 한국광학회지
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• 제1권2호
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• pp.169-177
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• 1990

레이저관내에 별도의 전극을 설치하지 않고 레이저전극 자체만으로 선전리 효과를 얻을 수 있는 질소레이저를 연구하였다. 이를 위하여 펄스형 전원과 고속고전압 방전간극을 사용하는 레이저를 제작하였으며, 레이저관 양단에는 저항 또는 인덕터를 연결하여 이들이 레이저 동작특성에 미치는 영향과 자체 선전리 효과를 함께 연구하였다.

• 공업화학
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• 제30권2호
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• pp.205-211
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• 2019

지난 수십 년 동안 고분자 분산형 액정(polymer dispersed liquid crystal, PDLC)은 전기광학적으로 전환이 가능한 특성으로 인해 빛의 투과도를 자유롭게 조절할 수 있는 smart window를 개발하는 물질로서 주목을 받아왔다. 본 연구에서는 높은 구동전압과 낮은 명암비 등의 PDLC 문제점을 해결하기 위해 아크릴계 단량체 2-hydroxyethyl acrylate (2-HEA)와 ethylene glycol phenyl ether acrylate (EGPA)의 조성이 PDLC의 전기광학 특성에 미치는 영향을 평가하였다. 상온에서 10 cps 이하의 낮은 점도를 나타내는 2-HEA와 EGPA 단량체를 사용하여 제조하는 경우 보다 쉽게 capillary action에 의해서 indium tin oxide (ITO) glass 사이에 주입하는 공정이 가능하였다. Phenyl group를 포함한 EGPA 단량체가 대부분으로 이루어진 1 : 9인 단량체 혼합물로 만들어진 PDLC cell의 경우 전기장을 인가하지 않은 경우에도 불투명한 상태가 관측되지 않았고 인가 전압에 따라 매우 불안정한 투과율을 나타내었다. Cell gap thickness가 증가함에 따라 문턱전압(threshold voltage, $V_{th}$)과 포화전압(saturation voltage, $V_{sat}$)도 증가하는 경향을 나타내었으며, $20{\mu}m$의 cell gap thickness를 갖는 PDLC cell이 10과 $40{\mu}m$의 경우 보다 상대적으로 높은 명암비를 나타내었다. 특히, 7 : 3 비율의 2-HEA : EGPA 단량체 혼합물을 사용하여 제조된 PDLC cell의 경우가 낮은 구동전압과 높은 명암비의 가장 우수한 전기광학적 특성을 나타내었다.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권1호
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• pp.33-39
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• 2005

Comparing with the conventional transformer without the air gap, a contactless transformer with the large air gap between the long primary winding and the secondary winding has increased leakage inductance and reduced magnetizing inductance. For transferring the primary power to the secondary one, the high frequency series resonant converter has been widely used for the contactless power supply system with the large air gap and the increased leakage inductance of the contactless transformer However, the high frequency series resonant converter has the disadvantages of the low efficiency and high voltage gain characteristics in the overall load range due to the large air gap and the circulating magnetizing current. In this paper, the characteristics of the high efficiency and unit voltage gain are revealed in the proposed three-level series-parallel resonant converter. The results are verified on the simulation based on the theoretical analysis and the 5kW experimental prototype.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권5호
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• pp.239-244
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• 2006

To drive the high-image quality plasma displays of XGA and/or full-HD, we must effectively improve the driving waveform, which get the reset period for the stabilized control of wall charges, the address period to select discharge or non-discharge, and sustain period for luminance in 1 TV-frame, and also the display quality. To accomplish them, the development of the technology for the fast address discharge is required. In this paper, the correlation between the sustain-electrode gap and address discharge characteristics for the high-speed addressing was analyzed using the measurements of dynamic voltage margins. Results showed that the narrower the gap between the sustain electrodes, the narrower the with of the scan pulse became and a dynamic margin of data voltage of 29.2 V was obtained at scan pulse width of $1.0{\mu}s\;and\;V_{ramp}$ of 240 V for driving 4-inch test penal, which the gap between sustain electrodes was $65{\mu}m$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1544-1545
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• 2006

In this paper, we present a new reset waveform for a large-sustain-gap structure in at PDPs. In the driving of the large-sustain-gap structure with a conventional ramp reset waveform, we cannot avoid the condition of an address being a cathode, which causes lots of trouble in stabilizing a reset discharge. To solve these problems, we use the square pulse instead of the conventional rising ramp pulse. Before making a strong discharge between the address (cathode) and scan (anode) electrodes, we make a priming discharge between the address (anode) and the scan (cathode) electrodes to stabilize the strong discharge in which the address electrodes are the cathode. With this scheme, we obtained 60V minimum address voltage and 145V maximum address voltage in $250{\mu}m$ and $350{\mu}m$ gap structures.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.46-50
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• 2020

In this research, the attractive force of Coulomb type electrostatic chuck(ESC), which consisted of alumina dielectric, on glass substrate was studied by using the finite element analysis. The attractive force is caused by the high electrical resistance which occurs in contact region between glass substrate and dielectric layer. This research tries the simple geometrical modeling of ESC and glass substrate with air gap. The influences of the applied voltage, and air gap are investigated. When alumina dielectric with 1014 Ω·cm, 1.5 kV voltage, and 0.01 mm air gap were applied, electrostatic force in this work reached to 4 gf/㎠. This results show that the modeling of air gap is essential to derive the attractive force of the ESC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.52-57
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• 1995

An accurate and efficient single-integral semi-numerical model is developed and applied to analyse effects of localized electronic states in the mobility gap on the drain-current versus gale-voltage characteristics of hydrogenated amorphous field-effect transistors. It is shown that the low-density deep-gap states distributed in the midgap also sensitively and largely influence the device electronic performance as well as well as the large-density tail states distributed near the conduction band edge.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.262-264
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• 2009

Ternary oxides with controlled band gap energy and reduced reactivity against moisture and carbon dioxide gas were designed and studied as a potential material for protective layer of ac-PDPs. The results showed a significant reduction in firing voltage and improved environmental stability.

• 전기학회논문지
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• 제66권4호
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.