• Resources Recycling
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• v.23 no.6
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• pp.63-67
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• 2014

Gallium is an important material and is used by industry of oxide semi-conductor and LED chip. However, the most of the gallium-containing waste resources became outflow abroad and the most of which is imported from oversea by following technical problem and low circulation rate. In this research, the recovery of high purity Gallium metal from Gallium scrap, which containing about 30% of Gallium, was investigated by using hydro-metallurgical process. As pretreatment, the Gallium scrap was pulverized and leached by strong acid such as hydro chloric acid. At the leached solution, Indium was separated as an Indium sponge by substitution reaction and then Gallium and Zinc hydroxide separated and filtrated using strong alkaline solution such as sodium hydroxide by precipitation method. Also, Gallium metal and Zinc metal was recovered by electrowinning method. To make an electrolytic solution, Gallium and Zinc hydroxide was leached by strong alkaline solution. Finally, High purity Gallium metal was recovered by vacuum refining process to remove the Zinc impurity.

• Resources Recycling
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• v.2 no.4
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• pp.27-32
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• 1993

A process has been studied to recover gallium from steelmaking dust which had several hundreds ppm of gallium. Aqueous solution containing 38 mg/l gallium was obtained by leaching of dust with 2.25 mol/l sulfuric acid. The leach liquor contained iron and zinc about 1,000 times greater than gallium. Gallium was then concentrated by ion exchanger of chelating resin with functional group of amino carboxylic acid after reduction of ferric ion to ferrous ion and pH adjustment. Gallium was concentrated to be 13 g/l in the resulting eluate by double ion exchanges. The liquor was further treated to remove impurities by solvent extraction technique empolying TOMAC as extractant. The galluim with 99% purity was finally obtainable.

• Resources Recycling
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• v.2 no.2
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• pp.22-26
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• 1993

The flowsheet for the recovery of gallium and indium from zinc residues has been established based on the sulfuric acid treatment. In comparison with the alkali treatment, the method proposed in this work allowed the recovery of indium together with gallium. The majority of iron contained in leach liquor could be removed through the two-stage neutrallization under oxidative or reductive atmosphere. Crude gallium and indium could be obtained through the alkali and/or acid leaching of the products generated from the above treatment. In addition, cementation of indium with zinc powders could also be used for the concentration of it from weak acid solutions.

• Resources Recycling
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• v.9 no.3
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• pp.29-36
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• 2000

A study on the recovery of gallium from leaching solutions is carried out by solvent extraction in order to produce gallium oxide of high purity. The results show that the extraction of gallium is found to be increase with acidities of aqueous solution up to 7.4 M/L when pure isopropyl ether is used. And the extraction of iron also increases with increasing acidity of aqueous solution. It appears that the separation of gallium from iron cannot be satisfactorily accomplished with isopropyl ether. But, in the case of extaction with D2EHPA, almost complete extraction of iron is achieved-leaving all the gallium in the aqueous solution-by maintaining the acidity of aqueous solution at 2 M/L. Accordingly, $Ga_2O_3{\cdot}H_2O$ of more than 99wt.% in purity can be produced from zinc residues through the processes comprising of alkali leaching, precipitation by neutralization and solvent extraction using isopropyl ether and D2EHPA as extractants.

• Resources Recycling
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• v.9 no.3
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• pp.22-28
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• 2000

A study on the recovery of gallium from zinc residues is carried out by alkali leaching using NaOH. The results show that in case of alkali leaching of zinc residues, Zn, K and Si are mainly leached out and Fe and other base metals are scarcely leached out, which results in that gallium is easily recovered by solvent extraction. The leaching efficiency of gallium increases with increasing alkali concentration and solid density. Especially, alkali consumption is considerably reduced by washing the zinc residues with water before leaching in order to eleminate the soluble zinc compounds. The gallium from zinc residues is found to be leached out with a recovery of 80% or higher for 2hrs leaching with 1~1.25 M/L NaOH solution and solid density 333 g/L at $25^{\circ}C$.

• Resources Recycling
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• v.29 no.1
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• pp.81-88
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• 2020

Recovery of gallium and indium from waste light emitting diodes has been emphasized gradually owing to high content of gallium and indium. This study was established the recovery of gallium (Ga³⁺) and indium (In³⁺) from waste gallium nitride was contained in waste light-emitting diodes. The procedure was divided into the following steps; characteristic analysis, alkaline roasting, and leaching. In characteristic analysis part, the results were used as a theoretical basis for the acid leaching part, and the chemical composition of waste light emitting diodes is 70.32% Ga, 5.31% Si, 2.27% Al and 2.07% In. Secondly, with reduction of non-metallic components by alkaline roasting, gallium nitride was reacted into sodium gallium oxide, in this section, the optimal condition of alkaline roasting is that the furnace was soaked at 900℃ for 3 hours with mixing Na₂CO₃. Next, leaching of waste light emitting diodes was extremely important in the process of recovery of gallium and indium. The result of leaching efficiency was investigated on the optimal condition accounting for the acid agent, concentration of acid, the ratio of liquid and solid, and reaction time. The optimal condition of leaching procedures was carried out for 2.0M of HCl liquid-solid mass ratio of 30 ml/g in 32minutes at 25℃ and about 96.88% Ga and 96.61% In were leached.

• Journal of Powder Materials
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• v.22 no.4
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• pp.278-282
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• 2015

The GaN-powder scrap generated in the manufacturing process of LED contains significant amounts of gallium. This waste can be an important resource for gallium through recycling of scraps. In the present study, the influence of annealing temperatures on the structural properties of GaN powder was investigated when the waste was recycled through the mechanochemical oxidation process. The annealing temperature varied from $200^{\circ}C$ to $1100^{\circ}C$ and the changes in crystal structure and microstructure were studied. The annealed powder was characterized using various analytical tools such as TGA, XRD, SEM, and XRF. The results indicate that GaN structure was fully changed to $Ga_2O_3$ structure when annealed above $900^{\circ}C$ for 2 h. And, as the annealing temperature increased, crystallinity and particle size were enhanced. The increase in particle size of gallium oxide was possibly promoted by powder-sintering which merged particles to larger than 50 nm.

• Resources Recycling
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• v.14 no.2
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• pp.28-32
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• 2005

By using thermal decomposition method, the preliminary experiments for recovery of metallic Ga from GaAs scraps produced in the manufacturing of compound semiconductors were carried out in laboratory(200 g/batch) scales. From these results, decomposition appratus with packed tower was constructed in commercial scale(30 kg/batch). The decomposition rate of GaAs increased with raising decomposition temperature, but the yield of Ga decreased over 1000$^{\circ}C. As a result, the optimum decomposition temperature was 1000~1050$^{\circ}C when the pressure of decomposition reactor was 2~2.5${\times}10^{-2} mmHg, and the yield of Ga was about 89 wt.%. The commercial decomposition apparatus was designed with packed tower because the partial pressure of As in vapor state was not reduced even if the temperature of As vapor was decreased. The recovery yield of Ga from GaAs scraps in large scale experiment showed 99%.

• Applied Chemistry for Engineering
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• v.25 no.4
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• pp.414-417
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• 2014

LED scraps consisting of highly crystalline GaN and their leaching behavior are comprehensively investigated for hydro-metallurgical recovery of rare metals. Highly stable GaN renders the leaching of the LED scraps extremely difficult in ordinary acidic and basic media. More favorable state can be obtained by way of high temperature solid-gas reaction of GaN-$Na_2CO_3$ powder mixture, ball-milled thoroughly at room temperature and subsequently oxidized under ambient air environment at $1000-1200^{\circ}C$ in a horizontal tube furnace, where GaN was effectively oxidized into gallium oxides. Stoichiometry analysis reveals that GaN is completely transformed into gallium oxides with Ga contents of ~73 wt%. Accordingly, the oxidized powder can be suitably leached to ~96% efficiency in a boiling 4 M HCl solution, experimentally confirming the feasibility of Ga recycling system development.

• Resources Recycling
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• v.4 no.3
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• pp.10-18
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• 1995

Recycling of GaAs scrap which occurs durmg the manufachre of GaAs waters is. therefore, required to solve the environmentalproblcrns caused by arsenic metal and to reutilize gallium which is a expensive metal. A thema-analyticalstudy (thermogravimeg. and derivative thermogravimetry) tor the evaporation behavior of Fa, As from Gak\ulcorner scrap powdersat vacuum atmosphere(2-2.5X 10'mmHg); was primarily performed to identi j the possibility of Ga extraction. Until79YC, the weight change of G d s porvder does not take place, at 800-970C range GaAs vaporizes as the GaAs compound,and over 1WO"C it decamposes mto Ga and As md then As vaporizes rapidly as a result of the difference af vaporprcssure for Ga and As, liquid Ga rcmains eventually.mains eventually.