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http://dx.doi.org/10.14478/ace.2014.1059

Study on Leaching Behavior for Recovery of Ga Metal from LED Scraps  

Park, Kyung-Soo (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Swain, Basudev (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Kang, Lee Seung (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Lee, Chan Gi (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Uhm, Sunghyun (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Hong, Hyun Seon (Advanced Materials & Processing Center, Institute for Advanced Engineering (IAE))
Shim, Jong-Gil (Enco co. Ltd.)
Park, Jeung-Jin (Enco co. Ltd.)
Publication Information
Applied Chemistry for Engineering / v.25, no.4, 2014 , pp. 414-417 More about this Journal
Abstract
LED scraps consisting of highly crystalline GaN and their leaching behavior are comprehensively investigated for hydro-metallurgical recovery of rare metals. Highly stable GaN renders the leaching of the LED scraps extremely difficult in ordinary acidic and basic media. More favorable state can be obtained by way of high temperature solid-gas reaction of GaN-$Na_2CO_3$ powder mixture, ball-milled thoroughly at room temperature and subsequently oxidized under ambient air environment at $1000-1200^{\circ}C$ in a horizontal tube furnace, where GaN was effectively oxidized into gallium oxides. Stoichiometry analysis reveals that GaN is completely transformed into gallium oxides with Ga contents of ~73 wt%. Accordingly, the oxidized powder can be suitably leached to ~96% efficiency in a boiling 4 M HCl solution, experimentally confirming the feasibility of Ga recycling system development.
Keywords
light emitting diode scraps; leaching; gallium nitride; heat treatment; recovery;
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