• KIPE Magazine
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• v.27 no.3
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• pp.38-48
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• 2022

국내 통신 시장은 4G LTE 통신 상용화 이후 2019년 세계 최초로 5G 통신 상용화를 시작하여 각각의 통신사가 앞다투어 설비 투자를 진행하고 있다. 많은 투자가 진행됨에도 불구하고 통신망의 범위, 낙후 지역에 대한 비활성화로 인하여 소비자의 욕구를 충족시키지 못하고 있는 실정이다. 이러한 소비자의 불만족을 해소시키고자 정부의 투자 독려로 인해 2022-2024년까지 지속적으로 5G 장비 투자가 진행될 예정이다. 5G 통신 장비에는 시스템 장비에 전원을 공급해주는 전원 장치가 필요하다. 최근 통신용 전원 장치는 시스템 용량이 증가함에 따라 고전력 장비가 요구되고 있으며, 추가적으로 탄소 배출과 관련하여 에너지 문제가 대두됨에 따라 소형화 및 고효율의 통신용 전원 장치 개발이 주를 이루고 있다. 이를 위해 WBG(Wide Band-Gap) 소자 및 토폴로지 변경, 열적 최적화 등 다양한 방법을 통해 고밀도, 고효율을 달성하고 있다. 본고는 WBG 소자 중 GaN(Gallium Nitride) 전력 반도체를 이용하여 제작한 전원 장치의 설계에 내한 내용을 소개한다.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.294-295
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• 2020

차세대 전력반도체 중 하나인 GaN HEMT(Gallium Nitride High Electron Mobility Transistor)는 낮은 온 저항, 고속 스위칭 및 낮은 출력 커패시턴스 특성을 가지므로 더 높은 전력밀도를 달성할 수 있다. 그러나 낮은 문턱 전압 및 높은 dv/dt로 인해 외부 요인에 취약하다. 본 논문에서는 GaN HEMT를 3kW급 단상 인버터에 적용 시 발생한 문제점을 분석하고 해결방안을 제시한다.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.300-301
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• 2020

본 논문은 GaN(Gallium Nitride)전력모듈과 GaN IPM(Intelligent Power Module)의 DPT(Double Pulse Test)를 통한 스위칭 특성 분석에 대해 다룬다. GaN 소자는 낮은 스위칭 손실로 인하여 고속 스위칭이 가능하여 최근 각광받는 소자 중 하나이다. 본 논문에서는 GaN 소자의 DPT를 위한 테스터를 설계/제작하고, 이를 활용하여 전압/전류 별 스위칭 특성을 실험적으로 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.133-140
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• 2024

This study offers a comprehensive evaluation of the role and impact of advanced power semiconductors in solar module systems. Focusing on silicon carbide (SiC) and gallium nitride (GaN) materials, it highlights their superiority over traditional silicon in enhancing system efficiency and reliability. The research underscores the growing industry demand for high-performance semiconductors, driven by global sustainable energy goals. This shift is crucial for overcoming the limitations of conventional solar technology, paving the way for more efficient, economically viable, and environmentally sustainable solar energy solutions. The findings suggest significant potential for these advanced materials in shaping the future of solar power technology.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1064-1073
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• 2013

In this paper, a compact 370 W high efficiency GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) power amplifier(PA) using internal harmonic manipulation circuits is presented for cellular and L-band. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd harmonic frequency. In order to minimize package size, new 41.8 mm GaN HEMT and two MOS(Metal Oxide Semiconductor) capacitors are internally matched and combined package size $10.16{\times}10.16{\times}1.5Tmm^3$ through package material changes and wire bonded in a new package to improve thermal resistance. When drain biased at 48 V, the developed GaN HEMT power amplifier has achieved over 80 % Drain Efficiency(DE) from 770~870 MHz and 75 % DE at 1,805~1,880 MHz with 370 W peak output power(Psat.). This is the state-of-the-art efficiency and output power of GaN HEMT power amplifier at cellular and L-band to the best of our knowledge.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.165-170
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• 2015

In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

• Korean Journal of Crystallography
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• v.5 no.1
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• pp.24-32
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• 1994

The study of (0001), (1120) and (1011) GAN epitaxy films grown on the (0001),(1012) and (1120) α-Al2O3 substrates have been investigated using the haliar vapor phaes epitaxy(HVPE) method in Ga/HCI/NH3/He system. XRD, RHEED and SEM are used for the study of the films struction and surface morphology. Chemical composition of the film surface is estimsted by XPS. The following orientation relationships are observed; (0001) GaN /(0001) Al2O3 (1120) GaN/ (1012) Al2O3 and (0001) and (1011) GaN/ (1120) Al2O3 in accordance with growth conditions. The (0001) GaN films grown on(0001) and (1120) a-Al2O3 substrates at higer temperature(1050℃) have shown two dimensional grownth mechanism. Form SEM and RHEED, the smoother surface morphology and better structure are observed for the (1011) GaN films grown on (1120) sapphire at higer temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.1-6
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• 2020

In this research, 50 nm thick AlN thin films were deposited on the patterned sapphire (0001) substrate by using HVPE (Hydride Vapor Phase Epitaxy) system and then epitaxial layer structure was grown by MOCVD (metal organic chemical vapor deposition). The surface morphology of the AlN buffer layer film was observed by SEM (scanning electron microscopy) and AFM (atomic force microscope), and then the crystal structure of GaN films of the epitaxial layer structure was investigated by HR-XRC (high resolution X-ray rocking curve). The XRD peak intensity of GaN thin film of epitaxial layer structure deposited on AlN buffer layer film and sapphire substrate was rather higher in case of that on PSS than normal sapphire substrate. In AFM surface image, the epitaxial layer structure formed on AlN buffer layer showed rather low pit density and less defect density. In the optical output power, the epitaxial layer structure formed on AlN buffer layer showed very high intensity compared to that of the epitaxial layer structure without AlN thin film.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)