• Journal of Animal Environmental Science
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• v.20 no.3
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• pp.117-124
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• 2014

The objectives were to assess the use of near-infrared reflectance spectroscopy (NIRS) as a tool for estimating nutrient compositions of corn kernel, and to apply an NIRS-based indium gallium arsenide array detector to the system for collecting spectra and analyzing calibration equations using equipments designed for field application. Partial Least Squares Regression (PLSR) was employed to develop calibration equations based on representative data sets. The kennard-stone algorithm was applied to induce a calibration set and a validation set. As a result, the method for structuring a calibration set significantly affected prediction accuracy. The prediction of chemical composition of corn kernel resulted in the following (kennard-stone algorithm: relative) moisture ($R^2=0.82$, RMSEP=0.183), crude protein ($R^2=0.80$, RMSEP=0.142), crude fat ($R^2=0.84$, RMSEP=0.098), crude fiber ($R^2=0.74$, RMSEP=0.098), and crude ash ($R^2=0.81$, RMSEP=0.048). Result of this experiment showed the potential of NIRS to predict the chemical composition of corn kernel.

• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.411-416
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• 2004

In the international temperature scale of 1990 (ITS-90), standard platinum resistance thermometer (SPRT) is a defining standard thermometer used in the temperature range from 13.8033 K to $961^{\circ}C$. Uncertainty of SPRT is about several mK and uncertainty of defining fixed points of the ITS-90 which is used for calibrating SPRT is about several tenth of mK. Above $0^{\circ}C$. the defining fixed points are gallium melting point and indium, tin, zinc, aluminium and silver freezing points which are all realized using an electric furnace or a liquid bath. To realize freezing point of tin ($231.928^{\circ}C$) and zinc ($419.527^{\cir}C$), two 3-zone furnaces which have 3 electric heaters were manufactured. Temperature gradient of the constructed furnaces were tested. Uncertainty caused by temperature gradient of furnace and immersion effect of SPRT in the sealed-type freezing point cells were evaluated 0.038 mK for tin freezing point and 0.036 mK for zinc freezing point.

• Korean Journal of Materials Research
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• v.23 no.2
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• pp.104-111
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• 2013

In this study, GaN powders were synthesized from gallium oxide-hydroxide (GaOOH) through an ammonification process in an $NH_3$ flow with the variation of $B_2O_3$ additives within a temperature range of $300-1050^{\circ}C$. The additive effect of $B_2O_3$ on the hexagonal phase GaN powder synthesis route was examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared transmission (FTIR) spectroscopy. With increasing the mol% of $B_2O_3$ additive in the GaOOH precursor powder, the transition temperature and the activation energy for GaN powder formation increased while the GaN synthesis limit-time ($t_c$) shortened. The XPS results showed that Boron compounds of $B_2O_3$ and BN coexisted in the synthesized GaN powders. From the FTIR spectra, we were able to confirm that the GaN powder consisted of an amorphous or cubic phase $B_2O_3$ due to bond formation between B and O and the amorphous phase BN due to B-N bonds. The GaN powder synthesized from GaOOH and $B_2O_3$ mixed powder by an ammonification route through ${\beta}-Ga_2O_3$ intermediate state. During the ammonification process, boron compounds of $B_2O_3$ and BN coated ${\beta}-Ga_2O_3$ and GaN particles limited further nitridation processes.

• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• v.42 no.1
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• pp.2-8
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• 2016

Objectives: The purpose of this study was to investigate the effects of low-level laser therapy (LLLT) with a diode gallium-aluminum-arsenide (Ga-Al-As) low-level laser device on the healing and attachment of titanium implants in bone. Materials and Methods: Thirteen New Zealand white male rabbits weighing $3.0{\pm}0.5kg$ were used for this study. Dental titanium implants (3.75 mm in diameter and 8.5 mm in length, US II RBM plus fixture; Osstem, Seoul, Korea) were implanted into both femurs of each rabbit. The rabbits were randomly divided into a LLLT group and a control group. The LLLT was initiated immediately after surgery and then repeated daily for 7 consecutive days in the LLLT group. Six weeks and 12 weeks after implantation, we evaluated and compared the osseointegration of the LLLT group and control group, using histomorphometric analysis, removal torque testing, and resonance frequency analysis (RFA). The results were statistically significant when the level of probability was 0.05 or less based on a non-parametric Mann-Whitney U-test. Results: The implant survival rate was about 96%. Histologically and histomorphometrically, we observed that the titanium implants were more strongly attached in LLLT group than in control group. However, there was no significant difference between the LLLT group and control group in removal torque or RFA. Conclusion: Histologically, LLLT might promote cell-level osseointegration of titanium implants, but there was no statistically significant effects.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.3
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• pp.109-113
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• 2005

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.5
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• pp.10-15
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• 2012

In this work, we proposed the asymmetric MQW structure with gradually increased or decreased well thickness from n-layers to p-layers in order to improve the performance of DUV-LEDs. We report the simulation results of electrical/optical characteristics by using the SimuLED program. From the simulation results, we found that B structure with thickness of the wells gradually increased from the n-side to the p-side has the same forward voltage(Vf) as standard structure, but the light output power (Pout) was improved by a factor of 1.17 at 20mA compared with those of the standard structure.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.99-104
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• 1990

The hetero-epitaxial growth of AmB v type onto-electronic material is attempted by means of the laser-induced chemical vapour deposition technique. The bimolecular gas phase reaction of trimethylgallium with ammonia on (001) alumina substrate for the epitaxy of gallium nitride is chosen as a model system. In this study, ArF exciter laser (193nm) is employed as a photon source. Marked difference is found in nucleation and in subsequent crystal incorporation between the doposits formed with and without the laser-irradiation. The surface coverage with isomorphically grown drystallites is pronounced upon "volume-excited" irradiation in comparison with the conventional thermal process. As to the crystal structure of the grown layers, the laser-induced deposits of GaN may be represented by either of the following two models: (001) plane of sapphire //y (001) plane of wurtzite-type GaN, OR (001) plane of sapphire//(001) plane of wurtzite-type-GaN (111) plane of twinned zinc blende-type GaN.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.357-361
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• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.10
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• pp.1017-1026
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• 2009

The solar cell system operates by facing the sun-light. Minor cracks, static discharge, and thermal shock that can happen during production/testing phase can lead to degradation in performance during operation, since solar cells are exposed to extreme thermal/mechanical environment in space. In order to detect small cracks and internal damages in the solar cells due to thermal shocks, which are the core units of a solar cell system, expensive equipment, complicated test process, and much time are required. Therefore, a qualitative method for easily and quickly testing the 'health' of solar cell functionality is required. This dissertation describes a theoretical and technical grounds for quickly and easily evaluating the health of solar cells using electroluminescence effect of Gallium-Arsenide solar cells that are most widely used by spacecrafts in recent years. Also described in the dissertation is the technical issues and constraining factors for applying the proposed method to actual space-rated solar cell systems.