• Journal of IKEEE
• /
• v.21 no.2
• /
• pp.170-173
• /
• 2017

In this study, we fabricate amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with three different gate electrode materials of Al, Mo and Pt on plastic substrates and investigate their electrical characteristics. Compared to an a-IGZO TFT with Al gate electrode, the threshold voltage of an a-IGZO TFT with a Pt electrode decreases from -4.2 to -0.3 V. and the filed-effect mobility is improved from 15.8 to $22.1cm^2/V{\cdot}s$. The threshold voltage shift of the TFT is affected by the difference between the work function of the gate electrode and the Fermi energy of the channel layer. Moreover, the Pt gate electrode is considered to be the suitable material in terms of the electrical characteristics of the TFT. In addition, an description on an a-IGZO TFT with a Mo electrode will be given here.

• Journal of Hydrogen and New Energy
• /
• v.20 no.5
• /
• pp.432-438
• /
• 2009

In this paper, we synthesized LSG powder by Modified-GNP method. Lanthanum, strontium and gallium (LSG) were selected in the preparation of an oxygen-electrode (anode) for High Temperature Steam Electrolysis system (HTSE). The used amount and concentration of nitric acid were varied to find out an appropriate composition for oxygen-electrode (anode). In order to optimize the molar ratio of La and Sr, ratio of La to Sr was varied that 2:8, 5:5 and 8:2. The combined LSGs were calcined for 2 hours at $700^{\circ}C$ and were sintered in a furnace for 4 hours at $1200^{\circ}C$. The phase and crystallinity of LSG powder were determined by XRD. The surface morphology was observed through SEM photograph, and the specific surface area was investigated with BET. The thermochemical property was determined by TG/DTA. The synthesized preparation was obtained of $La_{0.8}Sr_{0.2}GaO_{3}$ formula for 3M nitric acid, which was the best perovskite phase.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.4
• /
• pp.306-317
• /
• 1995

Abstract Gallium arsenide crystal is usually grown from the melt by the horizontal Bridgman method. We constructed pseudo - steady - state model for crystal growth of GaAs which inclue melt, crystal and the free interface. Mathematical equations of the model were solved for flow, temperature, and concentration field in the melt and temperature field in the crystal. The location and shape of the interface were also solved simultaneously. In 2 - dimensional model, the shape of the interface is flat with adiabatic thermal boundary condition, but it becomes curved with completely conducting thermal boundary condition. In 3 - dimensional model, the interface is less curved than 2 - dimensional case and the flow intensity is similar to that of 2 - dimensional case. With the increase of flow intensity vertical segregation shows maximum value in both 2 - and 3 - D model. However, the maximum value occurs in lower flow intensity in 2 - D model because the interface is more curved for the same flow intensity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.3
• /
• pp.185-190
• /
• 2015

In this study, we fabricated the indium gallium zinc oxide (IGZO), zinc oxide (ZnO), aluminum zinc oxide (AZO). oxide and silver are deposited by magnetron sputtering and thermal evaporator, respectively transparency and energy bandgap were changed by the thickness of silver layer. To fabricate metal oxide metal (OMO) structure, IGZO sputtered on a corning 1,737 glass substrate was used as bottom oxide material and then silver was evaporated on the IGZO layer, finally IGZO was sputtered on the silver layer we get the final OMO structure. The radio-frequency power of the target was fixed at 30 W. The chamber pressure was set to $6.0{\times}10^{-3}$ Torr, and the gas ratio of Ar was fixed at 25 sccm. The silver thickness are varied from 3 to 15 nm. The OMO thin films was analyzed using XRD. XRD shows broad peak which clearly indicates amorphous phase. ZnO, AZO, OMO show the peak [002] direction at $34^{\circ}$. This indicate that ZnO, AZO OMO structure show the crystalline peak. Average transmittance of visible region was over 75%, while that of infrared region was under 20%. Energy band gap of OMO layer was increased with increasing thickness of Ag layer. As a result total transmittance was decreased.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.5
• /
• pp.519-525
• /
• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.9
• /
• pp.783-789
• /
• 2015

This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of -25.7 dBc at an average output power of 33.4 dBm.

• The Journal of Korean Physical Therapy
• /
• v.13 no.3
• /
• pp.569-578
• /
• 2001

The purpose of the present study was to examine the functional recovery of the crushed sciatic nerve of rats after low-power laser irradiation applied to the corresponding segments of the spinal cord. After a crushed injury on the left sciatic nerve in rats. low-power laser irradiation was applied transcutaneously to corresponding segments of the spinal cord immediately after suture the wound by using 2000 mW, 2000Hz, 830 nm CaAIAs(Gallium-aluminum-arsenide) semiconductor diode laser. The laser treatment was performed with 10 minutes daily for 4 successive weeks. Functional recovery was evaluated per weekly following injury by sciatic function index(SFI),using data obtained by walking track analysis. For four weeks after crush injury, experimental group had significantly greater functional improvement than control group(${\alpha}$=0.05). In a experimental group, SFI was significantly increased for three weeks, but control group not increased for two weeks. This study suggests that low-power laser irradiation applied directly to the spinal cord can improve functional recovery of the crushed sciatic nerve in rats.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.28 no.9
• /
• pp.685-697
• /
• 2017

In this paper, it is presented the result of design and fabrication for C-band solid state high power amplifier unit and components using in search radar. The solid state power amplifier(SSPA) assembly was fabricated using GaN(Gallium Nitride), which is semiconductor device, and the transmit signal output power of the solid state high power amplifier unit is generated by combining the transmit signal power of the solid state power amplifier configured in parallel through a design and fabricated waveguide type transmit signal combine assembler. Designed solid state high power amplifier unit demonstrated C-band 500 MHz bandwidth, maximum 10.5% duty cycle, transmit pulse width from $0.0{\mu}s{\sim}000{\mu}s$, and transmit signal power is 44.98 kW(76.53 dBm).

• Transactions on Electrical and Electronic Materials
• /
• v.18 no.1
• /
• pp.7-12
• /
• 2017

This work takes place in the context of the development of a transport phenomena simulation based on group III nitrides. Gallium and boron nitrides (GaN and BN) are both materials with interesting physical properties; they have a direct band gap and are relatively large compared to other semiconductors. The main objective of this paper is to study the effect of boron content on the electron transport of the ternary compound $B_xGa_{(1-x)}N$ and the effect of the temperature of this alloy at x=50% boron percentage, specifically the piezoelectric, acoustic, and polar optical scatterings as a function of the energy, and the electron energy and drift velocity versus the applied electric field for different boron compositions ($B_xGa_{(1-x)}N$), at various temperatures for $B_{0.5}Ga_{0.5}N$. Monte carlo simulation, was employed and the three valleys of the conduction band (${\Gamma}$, L, X) were considered to be non-parabolic. We focus on the interactions that do not significantly affect the behavior of the electron. Nevertheless, they are introduced to obtain a quantitative description of the electronic dynamics. We find that the form of the velocity-field characteristic changes substantially when the temperature is increased, and a remarkable effect is observed from the boron content in $B_xGa_{(1-x)}N$ alloy and the applied field on the dynamics of holders within the lattice as a result of interaction mechanisms.

• Journal of Periodontal and Implant Science
• /
• v.26 no.1
• /
• pp.230-243
• /
• 1996

Root surface exposure due to gingival recession after periodontal surgery, dentin exposure after root planing elicit pain response when exposed to mechanical, heat, chemical or osmotic stimulation. Especially, patients treated with periodontal surgery, show high frequency and there have been reports showing the 1 out of 7 patients have dentin hypersensitivity. There have been many studies on the clinical effects of various materials on the treatment of dentin hypersensitivity. but, none could provide absolute clinical efficacy. In this study, 45 teeth from 30 patients, who had had periodontal surgery and showed dentin hypersensitivity after surgery were chosen for the experimental group and they were illuminated with laser, 15teeth were chosen for the control group and they were not exposed to laser. After this dentin hypersensitivity was elicited by tactile, compressed air, cold water and then, the degree was evaluated using NRS(Numerical Rating Scale). And during LLLT(Low Level Laser Therapy) semiconductor laser using Gallium - Arsenide as a diode was illuminated for 180 seconds at a frequency of 7(500Hz). This therapy was done 10 times, and each time the changes in dentin hypersensitivity was evaluated using NRS. The results were as follows : 1. After treat with LLLT on dentin hypersensitivity due to periodontal surgery, 22.2% showed total loss of dentin hypersensitivity, 60.0% showed loss of tactile dentin hypersensitivity, 48.8% showed loss of compressed air dentin hypersensitivity, 22.2% showed loss of cold water dentin hypersensitivity. 2. As a result of clinical evaluation of dentin hypersensitivity using NRS, there was significant increase in improvement of dentin hypersensitivity in the experimental group compare to the control group(P<0.05). And there was almost no natural loss of dentin hypersensitivity in the control group. 3. In comparison of the stages of evaluation, there was significant difference in between experimental and control group. after the second visit(P<0.05), and the difference increased with each visit.