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http://dx.doi.org/10.5515/KJKIEES.2017.28.9.685

Design and Fabrication of C-Band GaN Based on Solid State High Power Amplifier Unit for a Radar System  

Jung, Hyoung Jin (Radar R&D Lab., LIGNex1)
Park, Ji Woong (Radar R&D Lab., LIGNex1)
Jin, Hyoung Seok (Radar R&D Lab., LIGNex1)
Lim, Jae Hwan (Radar R&D Lab., LIGNex1)
Park, Se Jun (Radar R&D Lab., LIGNex1)
Kang, Min Woo (Radar R&D Lab., LIGNex1)
Kang, Hyun Chul (RFHIC)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.28, no.9, 2017 , pp. 685-697 More about this Journal
Abstract
In this paper, it is presented the result of design and fabrication for C-band solid state high power amplifier unit and components using in search radar. The solid state power amplifier(SSPA) assembly was fabricated using GaN(Gallium Nitride), which is semiconductor device, and the transmit signal output power of the solid state high power amplifier unit is generated by combining the transmit signal power of the solid state power amplifier configured in parallel through a design and fabricated waveguide type transmit signal combine assembler. Designed solid state high power amplifier unit demonstrated C-band 500 MHz bandwidth, maximum 10.5% duty cycle, transmit pulse width from $0.0{\mu}s{\sim}000{\mu}s$, and transmit signal power is 44.98 kW(76.53 dBm).
Keywords
Solid State Power Amplifier; SSPA; GaN; C-Band; Search Radar;
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