• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.185-188
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• 1996

The doped n-type $Al_{x}Ga_{1-x}Sb$ crystals were grown by the vertical Bridgman method at composition ratio x=0, x=0.1, x=02 respectively. The lattice constants of the $Al_{x}Ga_{1-x}Sb$ crystals were 6.096${\AA}$, 6.097${\AA}$, 6.106${\AA}$ at composition ratio respectively. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x-0 were n≡1 x $10^{17}$$cm^{-3}$, $\rho$≡0.15 ${\Omega}$-cm, ${\mu}$$_{n}$≡500 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K. The carrier concentration, the resistivity, and the carrier mobility measured by the Van der Pauw method at x=0.1 were n≡2.96 x $10^{15}$$cm^{-3}$, $\rho$≡103 $\textrm{cm}^2$$V^{-1}$$sec^{-1}$ at 300K.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.127-127
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• 2010

Owing to many advantages on indirect intersubband absorption from the hole miniband to the electron miniband based on the type-II band alignment in InAs/GaSb strained-layer superlattice (SLS), InAs/GaSb SLS infrared photodetector (SLIP) has emerged as a promising system to realize high-detectivity quantum photodetector operating up to room temperature in the spectral range of mid-infrared (MIR) to far-infrared (FIR). In particular, n-barrier-n (n-B-n) structure designed for blocking the majority-carrier dark current makes it possible for MIR/FIR dual-band SLIP whose photoresponse (PR) band can be exclusively selected by the bias polarity. In this study, we present the MIR and FIR photoresponse (PR) mechanism identified by dual-band PR spectra and photoluminescence (PL) profiles taken from InAs/GaSb SLIP. In the MIR/FIR PR spectra measured by changing bias polarity, each spectrum individually shows a series of distinctive peaks related to the transitions from the hole subbands to the conduction one. The PR mechanism at each polarity is discussed in terms of diffusion current, and a superposition of MIR-PR in the FIR-PR spectrum is explained by tunnelling of electrons activated in MIR-SLS. The effective FIR-PR spectrum decomposed into three curves for HH1, LH1, and HH2 has revealed the edge energies of 120, 170, and 220 meV, respectively, and the temperature variation of the MIR-PR edge energies shows that the temperature behavior of the SLS systems can be approximately expressed by the Varshni empirical equation.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.152.2-152.2
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.52-53
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• 2004

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.271-277
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• 2022

We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the N_it distribution using TCAD simulation. As interface trap number density (N_it) increased, the threshold voltage increased while the drain current density decreased. Under N_it=5.0×10¹⁰ cm^-2 condition, the threshold voltage was 3.2 V for V_DS=1 V, and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the N_it distribution type, there was an increase in the subthreshold swing (SS) following an increase in N_it. Under U-shaped N_it distribution, it was confirmed that the SS varied depending on the gate voltage. The interface fixed charge (Q_f) caused an shift in the threshold voltage and increased the off-state current collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectronic circuit provided the surface state is significantly reduced.

• The Journal of Korean Academy of Prosthodontics
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• v.55 no.4
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• pp.389-393
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• 2017

Purpose: The aim of this study is to evaluate the flexural strength of flexible resins and the flexibility of different resin splint (RS) systems in comparison with resin wire splint (RWS) system. Materials and methods: Three different resin materials (G-aenial flo, GA, GC; Superbond, SB, Sun medical; G-fix, GF, GC) were tested flexural strength test in accordance with ISO-4049:2000. For the flexibility test of splint systems, a artificial model with resin teeth was used to evaluate three types of resin splint systems (GA, SB, and GF) and one resin wire splint system. The left central incisor was simulated 'injured teeth' with third degree mobility. Three consecutively repeated measurements of periotest value were taken in horizontal direction, before and after splinting to access tooth mobility. The splinting effect was calculated through the periotest value. Differences were evaluated through One-way Anova and Tukey HDS post-hoc tests for pair-wise comparison (${\alpha}=.05$). Results: Although GA group showed significant higher flexural strength than SB and GF groups, all of three different resin splint systems produced a significantly higher and rigid splinting effect compared with 016" resin-wire splint system (P < .05). Conclusion: Within the limits of an in vitro study, it can be stated that resin splint systems are too rigid and may not be acceptable to treat tooth avulsion.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• Proceedings of the Optical Society of Korea Conference
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• 2003.07a
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• pp.34-35
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• 2003

광통신 분야에서 광신호의 장거리 전송에 따른 세기 감소를 보강하기 위해 쓰이는 광섬유증폭기는 현재 1.3 $\mu\textrm{m}$ 대역, 1.45 $\mu\textrm{m}$ 대역 및 1.5 $\mu\textrm{m}$ 대역에서 작동하는 희토류 이온 첨가 광섬유 광증폭기가 개발되어 쓰이고 있다. 한편 ETRI에서는 기존 광통신에 쓰이는 광 증폭기에 추가해 더 넓은 파장대를 광통신에 쓸 수 있도록 하는 새로운 파장대역의 광 증폭기 구현을 가능케하고 나아가 광통신 용량을 기존보다 휠씬 더 큰 10 Tbps급 이상으로 늘이기 위해 1.6 $\mu\textrm{m}$ 파장대인 U 밴드대 광증폭기용 광섬유인 Pr 첨가 셀레나이드 유리 조성의 신소재를 개발하였는데, 본 연구에서는 Ge-Sb-Ga-Se 계열의 Pr 첨가 셀레나이드 유리의 굴절률을 분광타원 법 (spectroscopic ellipsometry)을 사용하여 결정하였다. (중략)

• 전기의세계
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• v.28 no.9
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• pp.60-73
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• 1979

이 논문은 1979년 vol. 28 n. 4에 이어지는 글이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.331.2-331.2
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• 2016

스퍼터 타깃 (target)을 스퍼터링하여 박막을 형성하는 스퍼터 증착은 고체 박막 형성 방법의 하나로서 널리 사용되고 있다. 타깃을 구성하는 합금 원소의 스퍼터링율 (sputtering yield)의 차이 때문에 스퍼터 증착이 진행됨에 따라 타깃 표면의 조성이 변화하지만 일반적으로 원소 간의 표면 농도 및 스퍼터링율의 차이 효과가 서로 상쇄되므로 증착되는 합금 박막의 조성은 타깃의 조성과 일치한다. 그러나 갈륨 (Ga)을 포함하는 합금 타깃을 스퍼터링하는 경우에는 갈륨의 낮은 녹는점 특성 때문에 타깃 조성보다 갈륨의 농도가 더 높은 갈륨 합금 박막이 형성되는 현상이 최근에 보고되었다 [1]. 본 연구에서는 GeGa 및 GeSbTe 타깃을 스퍼터링한 후의 타깃 표면형상 및 성분의 변화를 조사함으로써 마그네트론 스퍼터링 기술로 갈륨 합금 박막을 형성할 때 타깃 표면에서 발생하는 불균일한 조성 변화 특성을 고찰한다. GeSbTe 타깃에 비해 GeGa 타깃은 횡적으로 구분되는 영역이 뚜렷하고 각 영역에서의 Ge와 Ga의 농도가 최대 25 at%의 차이를 나타낸다. 이러한 국부적인 미세구조와 Ge 및 Ga 농도의 차이를 비교 분석하여 갈륨 합금 타깃 표면에서 발생하는 불균일한 조성 변화 현상의 메커니즘을 설명한다.