• 전기의세계
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• v.28 no.4
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.226-232
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• 1997

Ternary semiconductor $Al_{x}$G $a_{1-x}$ Sb crystals which have energy gap of 0.7eV-1.6 eV at room temperature according to the composition ratios were grown by the vertical Bridgman method. The characteristics of the crystals were investigated by XRD, HRTEM and Hall effect. The lattice constants of $Al_{x}$G $a_{1-x}$ Sb crystals were varied from 6.096A over .deg. to 6.135A over .deg. with the composition ratio x. The Hall effect of the $Al_{x}$G $a_{1-x}$ Sb crystals were measured by van der Pauw method with the magnetic field of 3 kilogauss at room temperature. The resistivities of Te-doped $Al_{x}$G $a_{1-x}$ Sb crystals were increased from 0.071 to 5 .OMEGA.-cm at room temperature according to the increment of the composition ratio x. The mobilies of $Al_{x}$G $a_{1-x}$ Sb crystals varied with the composition ratio x resulted in the following three different regions of GaSb-like (0.leq.x.leq.0.3), intermediate (0.3.leq.x.leq.0.4) and AlSb-like (0.4.leq.x.leq.l).q.l).q.l).q.l).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.103-103
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• 2009

본 논문에서는 기존의 GST(GeSbTe=2:2:5)와 비교하여 상변화 재료로서의 Ga 도핑된 $Ge_2Sb_2Te_5$의 가능성을 확인하고자 하였다. 실험에 사용된 Ga 도핑된 $Ge_2Sb_2Te_5$ 박막은 전통적 melt-quenching 방법에 의해 비정질로 제작된 벌크를 Thermal evaporation을 통하여 Si(100) 및 유리 (coming glass, 7059) 기판 위에 200nm의 두께로 증착하여 제작하였다. 각 박막의 상변화 특성은 여러 온도에서 열처리된 박막을 X-ray diffraction (XRD) 측정을 통하여 확인하였다. 각 조성 박막의 비정질-결정질 상변화속도 비교를 위하여 나노-펄스 스캐너 (nano-pulse scanner)를 사용하여 power; 1~17mW, pulse duration; 10~460ns 범위에서 박막의 상변화에 따른 반사도 차이를 측정 분석하였다. Ga의 도핑농도에 따른 전기적 특성 차이를 확인하기 위하여 4-point probe를 이용하여 박막의 면 저항을 측정하였고 또한 hall 측정을 통하여 박막의 흘 계수, 흘 농도 및 이동도를 확인하고 Ga가 상전이에 미치는 영향에 대하여 분석하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.113-116
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• 2010

We report on the growth and characteristics of the structural and optical properties of InGaN nano-structures doped with antimony (Sb) as a catalyst. The use of catalyst has been explored to modify the growth and defect generation during strained layer heteroepitaxial growth. We performed the growth of the InGaN nano-structures on c-sapphire substrates using mixed-source hydride vapor phase epitaxy (HVPE). The characteristic of samples was measured by scanning electron microscope (SEM) and photoluminescence (PL). The aligning direction of c-axis of the InGaN nano-structures was changed from vertical to parallel or inclined to the surface of substrates when the Sb was added as a catalyst. The indium composition was estimated about 3.2% in both cases of with or without the addition of Sb in the InxGal-xN structures. From the results of InGaN nano-structures formed with the addition of Sb, we can expect the performance of optical devices would be more improved by reduced piezo-electric field if we use the InGaN nano-structures of which c-axes are aligned parallel to the substrates as an active layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.695-701
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• 2016

Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.

• Journal of the Korean Vacuum Society
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• v.20 no.1
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• pp.22-29
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• 2011

An infrared thermographic imaging module of [$320{\times}256$] focal-plane array (FPA) based on [InAs/GaSb] strained-layer superlattice (SLS) was fabricated, and its images were demonstrated. The p-i-n device consisted of an active layer (i) of 300-period [13/7]-ML [InAs/GaSb]-SLS and a pair of p/n-electrodes of (60/115)-period [InAs:(Be/Si)/GaSb]-SLS. FTIR photoresponse spectra taken from a test device revealed that the peak wavelength (${\lambda}_p$) and the cutoff wavelength (${\lambda}_{co}$) were approximately $3.1/2.7{\mu}m$ and $3.8{\mu}m$, respectively, and it was confirmed that the device was operated up to a temperature of 180 K. The $30/24-{\mu}m$ design rule was applied to single pixel pitch/mesa, and a standard photolithography was introduced for [$320{\times}256$]-FPA fabrication. An FPA-ROIC thermographic module was accomplished by using a $18/10-{\mu}m$ In-bump/UBM process and a flip-chip bonding technique, and the thermographic image was demonstrated by utilizing a mid-infrared camera and an image processor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.33-36
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• 2004

탄소 도핑$(5{\times}10^{19}\;cm^{-3})$된 p-type GaAsSb 에피층 위에, Ti/Pt/Au, Pd/Au, Pd/Ir/Au를 이용한 다층 오믹 접촉을 제작하였다. MOCVD(metal-organic chemical vapor deposition)를 이용하여 성장시킨 이 p-GaAsSb의 정공 이동도는 탄소의 도핑 농도가 매우 높음에도 불구하고, $50\;cm^2/Vs$로 측정되었다. 오믹 접촉의 전기적 특성을 측정하기 위하여 TLM(Transfer length method)를 이용하였다. Pd/Ir/Au을 이용한 오믹접촉의 specific contact resistivity는 $10^{-8}\;ohm-cm^2$ 보다 작은 수치를, transfer length는 100 nm보다 작은 수치를 보였으며, Ti/Pt/Au을 이용한 ohmic contact의 specific contact resistivity는 $10^{-7|\;ohm-cm^2$ 보다 작은 수치를, transfer length는 400 nm보다 작은 수치를 나타내었다.

• Electrical & Electronic Materials
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• v.9 no.9
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• pp.885-890
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• 1996

Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.