p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy |
Benyahia, Djalal
(Institute of Applied Physics, Military University of Technology)
Kubiszyn, Lkasz (Vigo System S.A.) Michalczewski, Krystian (Institute of Applied Physics, Military University of Technology) Keblwski, Artur (Vigo System S.A.) Martyniuk, Piotr (Institute of Applied Physics, Military University of Technology) Piotrowski, Jozef (Vigo System S.A.) Rogalski, Antoni (Institute of Applied Physics, Military University of Technology) |
1 | R.A. Hogg, K. Suzuki, K. Tachibana, L. Finger, K. Hirakawa, Y. Arakawa, "Optical spectroscopy of self-assembled type II GaSb/GaAs quantum dot structures grown by molecular beam epitaxy," Appl. Phys. Lett. Vol.72, No.22, pp.2856-2858, Jun., 1998. DOI |
2 | L. Muller-Kirsch, R. Heitz, U.W. Pohl, D. Bimberg, I. Haussler, H. Kirmse, W. Neumann, "Temporal evolution of GaSb/GaAs quantum dot formation," Appl. Phys. Lett. Vol.79, No.7, pp.1027-1029, Aug., 2001. DOI |
3 | Y.B. Li, Y. Zhang, Y.P. Zeng, " Electron mobility in modulation-doped AlSb/InAs quantum wells," J. Appl. Phys, Vol.109, pp.073703, Apr., 2011. DOI |
4 | H.K. Lin, D.W. Fana, Y.C. Lina, P.C. Chiua, C.Y. Chiena, P.W. Lia, J.I. Chyia, C.H. Kob, T.M. Kuanb, M.K. Hsiehb, W.C. Leeb, C.H. Wann, "E-beam-evaporated for InAs/AlSb metaloxide-semiconductor HEMT development," Solid-State Electron. Vol.54, pp.505-508, May., 2010. DOI |
5 | O. Cathabard, R. Teissier, J. Devenson, J.C. Moreno, A.N. Baranov, "Quantum cascade lasers emitting near 2.6," Appl. Phys. Lett. Vol.96, pp.141110, Apr., 2010. DOI |
6 | C. Kittel, "Introduction to Solid State Physics," Polish Scientific Punlishers (PWN). Warsaw, pp.348-384, 1960. |
7 | E.H. Aifer, J.G. Tischler, J.H. Warner, I. Vurgaftman, W.W. Bewley, J.R. Meyer, J.C. Kim, L.J. Whitman, C.L. Canedy, E.M. Jackson, "Wstructure type-II superlattice long-wave infrared photodiodes with high quantum efficiency," Appl. Phys. Lett. Vol.89, pp.053519, Aug., 2006. DOI |
8 | M. Grudzien, J. Piotrowski, "Monolithic optically immersed HgCdTe IR detectors," Infrared Phys. Vol.29, pp.251-253, May, 1989. DOI |
9 | C. Anayama, T. Tanahashi, H. Kuwatsuka, S. Nishiyama, S. Isozumi, K. Nakajima, "High-purity GaSb epitaxial layers grown from Sb-rich solutions," Appl. Phys. Lett. Vol.56, pp.239-240, Nov., 1990. DOI |
10 | M. Leszczynski, J. Bak-Misiuk, J, Domagala, J. Muszalski, M. Kaniewska, J. Marczewski, "Lattice dilation by free electrons in heavily doped GaAs:Si," Appl. Phys. Lett. Vol.67, No.4, pp.539-541, Jul., 1995. DOI |
11 | J. Bak-Misiuk, M. Leszczynski, J, Domagala, J. Trela, "GaAlAs lattice parameter dependence on free electron concentration," Solid State Phenom. Vol.47-48, pp.437-442, Jan., 1996. DOI |
12 | I. Sankowska, A. Jasik, I. Kubacka-Traczyk, J.Z. Domagal, K. Reginski, "Role of beryllium doping in strain change in II-type InAs/GaSb superlattice investigated by high resolution X-ray diffraction method," Appl. Phys. A. Vol.108, pp.491-496, Apr., 2012. DOI |
13 | H.N. Leifer, W.C. Dunlap, "Some properties of ptype gallium antimonide between 15 K and 925 K," J. Phys. Rev. Vol.95, pp.51-56, Jul., 1954. DOI |
14 | B. Jenichen, R. Hey, S. Westphal, V, Kaganer, R. Kohler, "Crystal defects in vertical epitaxial structures on GaAs investigated by X-ray methods," Mater. Sci. Eng. B. Vol.28, pp.520-522, Dec., 1994. DOI |
15 | D. Benyahia, L. Kubiszyn, K. Michalczewski, A. Keblowski, P. Martyniuk, J. Piotrowski, A. Rogalski, "Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy," Opto-Electron. Rev. Vol.24, No.1, pp.40-45, Jan., 2016. DOI |
16 | W. Qian, M. Skowronski, R. Kaspi, M. De Graef, V.P. Dravid, "Nucleation of misfit and threading dislocations during the growth of GaSb on GaAs (001) substrates," J. Appl. Phys. Vol.81, No.11, pp.7268-7272, Mar., 1997. DOI |
17 | K.F. Longenbach, S. Xin, W.I. Wang, "p-type doping of GaSb by Ge and Sn grown by molecular beam epitaxy," J. Appl. Phys. Vol.69, No.5, pp.3393-3395, Mar., 1991. DOI |
18 | C.B. Alcock, V.P. Itkin, M.K. Horrigan, "Vapour pressure equations for the metallic elements: 298-2500 K," Canadian Matallurgical Quarterly, Vol.23, No.3, pp.309-313, Apr., 1984. DOI |