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http://dx.doi.org/10.5573/JSTS.2016.16.5.695

p-Type Doping of GaSb by Beryllium Grown on GaAs (001) Substrate by Molecular Beam Epitaxy  

Benyahia, Djalal (Institute of Applied Physics, Military University of Technology)
Kubiszyn, Lkasz (Vigo System S.A.)
Michalczewski, Krystian (Institute of Applied Physics, Military University of Technology)
Keblwski, Artur (Vigo System S.A.)
Martyniuk, Piotr (Institute of Applied Physics, Military University of Technology)
Piotrowski, Jozef (Vigo System S.A.)
Rogalski, Antoni (Institute of Applied Physics, Military University of Technology)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.16, no.5, 2016 , pp. 695-701 More about this Journal
Abstract
Be-doped GaSb layers were grown on highly mismatched semi-insulating GaAs substrate (001) with $2^{\circ}$ offcut towards <110> at low growth temperature, by molecular beam epitaxy (MBE). The influence of Be doping on the crystallographic quality, surface morphology, and electrical properties, was assessed by X-ray diffraction, Nomarski microscopy, and Hall effect measurements, respectively. Be impurities are well behaved acceptors with hole concentrations as high as $9{\times}10^{17}cm^{-3}$. In addition, the reduction of GaSb lattice parameter with Be doping was studied.
Keywords
Molecular beam epitaxy; GaSb; doping; high resolution X-ray diffraction; semiconducting III-V materials;
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