• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.2
• /
• pp.165-170
• /
• 2015

In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

• Journal of Life Science
• /
• v.7 no.4
• /
• pp.342-346
• /
• 1997

This experiment was carried out to clarify the effects of gibberellin(GA) aplication and bagging on repeening and quality in 'Delaware' grape berries. Treatments are 4 plots(2X2 factorial experiment); GA, GA+bagging, bagging and control. The clusters were dipped twice in 100 ppm GA with GA treatment : 10 days before and after the full bloom. The results obtained as follows: 1. GA treatment made the seedless grape berry reduced in the fresh weight but it hastened the ripening period about 2 weeks. 2. Total soluble solid(TSS), viscosity and pH value of berry juice increased with maturation. The concentration of TSS and viscosity were higher in GA treatment plot than GA non-treatment. 3. Berry-hardness, titratable acidity and alcohol inslouble solid(AIS) decreased with maturation. Expically berry-hardness and AIS decreased more greatly in GA non-treatment than GA treatment. 4. The concentration of anthocyanin increased with ripening but pectic substance didn't fluctuate nearly. These of anthocyanin and pectin were higher in GA non-treatment plot than GA treatment. 5. By analysis of factorial experiment GA treatment was highly significant with the $^{o}$Brix/Acidity ratio, juice viscosity and AIS, but high negatively, significant with berry-hardness and berry fresh weight. And it was significant with T S S and negatively, titratable acidity. Bagging was significant with $^{o}$Brix/Acidity ratio and AIS content, but negatively, titratable acidity. 6. Qualitative characters were high correlated with the $^{o}$Brix/Acidity ratio in simple correlation but direct effect by the path-coefficient analysis didn't coincide with simple correlation. The direct effect of pH was large and juice viscosity, the next. And that of berry-hardness was negligible but, AIS, small negatively.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.22 no.6
• /
• pp.149-154
• /
• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.

• Current Photovoltaic Research
• /
• v.2 no.2
• /
• pp.69-72
• /
• 2014

We investigated current-voltage (I-V) and capacitance (C)-V characteristics of solution-processed thin film solar cells, consisting of $Cu(In,Ga)S_2$ and $CuInS_2$ stacked absorber layers. The ideality factors, extracted from the temperature-dependent I-V curves, showed that the tunneling-mediated interface recombination was dominant in the cells. Rapid increase of both series- and shunt-resistance at low temperatures would limit the performance of the cells, requiring further optimization. The C-V data revealed that the carrier concentration of the $CuInS_2$ layer was about 10 times larger than that of the $Cu(In,Ga)S_2$ layer. All these results could help us to find strategies to improve the efficiency of the solution-processed thin film solar cells.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.6
• /
• pp.540-545
• /
• 2015

This paper presents the design, fabrication and measurement results of a S-band internally-matched power amplifier using Gallium Nitride High Electron Mobility Transistor(GaN HEMT) die. In order to fabricate the S-band internally-matched power amplifier, a high dielectric substrate and alumina were used for input/output matching circuits. The measured output power is 55.4 dBm, the drain efficiency is 78 % and the power gain is 11 dB under pulse operation at the frequency of 3 GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.10-12
• /
• 1996

AlGaAs/GaAs Heterojunotion Bipolar Transistors (HBTs) with various emitter areas were fabricated and the device size dependence on the current gain was examined. With the different emitter areas, the passivated devices having the same peripheral length were fabricated and measured. The measured base current density in the Gummel plots shows an ideality factor of nearly 2. It is found that as the emitter area becomes small, the base current density with the ideality factor of 2 increases linearly, and as the emitter perimeter/area ratio becomes large, the surface recombination current density component increases. The current gain performance in AlGaAs/GaAs HBTs is mainly determined by either the larger emitter area or the smaller ratio of the emitter perimeter to the emitter area. These results will be compared with experimental works for GaInP/GaAs HBTs

• Bulletin of the Korean Chemical Society
• /
• v.18 no.3
• /
• pp.311-316
• /
• 1997

The synthesis and characterization of the mononuclear group 13 heterocyclic carboxaldehyde methyldithiocarbazate complexes Me2M[NC5H4CRNNC(S)SCH3] (M=Al, R=H(1); M=Ga, R=H(2); M=Al, R=CH3(3); M-Ga, R=CH3(4); M=In, R=CH3(5)) are described. Compounds 1-5 were prepared by the reaction of MMe3 (M=Al, Ga, In) with 2-formy or 2-acetylpyridine-S-methyldithiocarbazate in toluene. These compounds 1-5 have been characterized by microanalysis, NMR (1H, 13C) spectroscopy, mass spectra, and single-crystal X-ray diffraction. X-ray single-crystal diffraction analyses reveal that 4-5 are mononuclear metal compounds with coordination number of 5 and N,N,S coordination mode.

• Proceedings of the KAIS Fall Conference
• /
• 2010.11a
• /
• pp.168-171
• /
• 2010

본 논문에서는 GaN HEMT 소자를 이용한 고출력 고효율 특성을 가지는 광대역 SSPA의 개발을 다루고 있다. 개발한 SSPA는 8W 급과 15W 급의 GaN HEMT 소자를 사용하여 Pre-Drive 증폭단을 구성하였으며, Drive 증폭단은 50W/150W급 GaN HEMT 소자를 직/병렬구조로 사용하였다. Main 증폭단은 4-way 분배기와 결합기를 이용한 Balanced Structure를 적용하여 높은 출력을 구현하였으며, 안정적인 동작을 위하여 음(-)전원 제어 회로와 출력신호 검출 회로를 포함하고 있다. 제작된 SSPA의 사용가능 대역은 2.9GHz~3.3GHz로 단일전원을 사용하고 있으며 100us 펄스 폭, 10% Duty Cycle 조건에서 60dB의 전압이득, 1kW 출력과 약 28% 효율 특성을 가지는 것으로 측정되었다. 본 논문에서 개발한 SSPA는 S-대역을 사용하는 레이더시스템의 송신단에 적용될 수 있다.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.7
• /
• pp.15-22
• /
• 1997

A 10Gbit/s limiting amplifier IC for optical transmission system was implemented with AlGaAs HBT (heterojunction bipolar transistor) technology. HBTs with 2x10.mu. $m^{2}$ and 6x20.mu. $m^{2}$ emitter size were used. The HBT structures are based on metal-organic chemical vapor deposition (MOCVD) epitxy and employ a mesa structure with self-aligned emitter/base and sidewall dielectric passivation. IC was designed to support differnetial input and output. Small signal performance of the packaged IC showed 26dB gain and $f_{3dB}$ of 8GHz. A single ouput has 800m $V_{p-p}$ swing with more than 26dB dynamic range. The performance of the limiting amplifier was verified through single mode fiber320km transmission link test.est.

• Korean Journal of Pharmacognosy
• /
• v.40 no.1
• /
• pp.32-34
• /
• 2009

Korean folk medicine 'Ma Ga Mog' has been used as a remedy for rheumatis, cough and bronchitis in Korea. The botanical origin of the crude drug has been no pharmacognostical confirmation on it. To clarify the botanical origin of 'Ma Ga Mog', the anatomical characteristics of the bark of Sorbus amurensis Koehne, S. commixta Hedl. and S. sambucifolia (Cham. et Schltdl.) Roemer var. psuedo-gracilis C. K. Schneid. were studied. As a result, it was clarified that 'Ma Ga Mog' from Korea was the bark of Sorbus amurensis Koehne and S. commixta Hedl.