• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.266-270
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• 2011

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (${\pm}0.02$) and 2.07 (${\pm}0.02$) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.114-121
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• 2015

In conventional LEDs, a mesa-structure is usually used and it causes the current to be overcrowded in a specific region. We propose a novel structure of GaN-based LED to overcome this problem. In order to distribute the current in an active region, a spreading pad is inserted at the p-type region in the GaN based LED device. The inserted spreading pad helps the current flow because it is more conductive than the p-type GaN layer. By performing electrical and optical simulations, the effects of the spreading pad insertion are confirmed. The results of electrical simulation show that the current spreads more uniformly and more radiative recombination is produced as well. Moreover, from the optical simulation, it is revealed that the ITO is less absorptive material than p-GaN if the condition of specific wavelength sources is satisfied. Considering all of the results, we can conclude that the luminescent power is enhanced by the spreading pad.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.510-514
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• 2005

We have investigated the excitation-light source dependence of photo-catalytic efficiency for the benzene removal. The photo-catalytic module for the benzene removal is fabricated by a combination of GaN-based ultraviolet light-emitting diode (UV GaN-LED) and $TiO_2$ thin film coated on an aluminum plate. The benzene reduction rates of 365 nm and 375 nm modules at 60 mA junction current are approximately $8.95\;\%/Hr$ and $9.2\;\%/Hr$, respectively, which indicates that 365 nm GaN-LED is more effective than 375 nm GaN-LED. The benzene reduction efficiency is also noticeably dependent on the excitation wavelength and excitation-light power, as well as it is increased with the shorter wavelength and higher excitation power. This result exhibits that UV GaN-LED is useful to remove the volatile organic compounds (VOCs) existing in the environment.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.441-446
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• 2023

Electrical and optical characteristics of the GaN-based light-emitting diode (LED) with the improved multi-quantum well (MQW) structure have been studied for light source in bio-sensing systems. Novel GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN and Al_0.1GaN/GaN/In_0.2GaN/GaN/Al_0.1GaN (MQW) structures were suggested, and their radiative recombination rate, light output power, electroluminescence, and external quantum efficiency were compared with those of the conventional GaN/In_0.2GaN/GaN MQW structure using device simulation. The LED with the GaN/In_0.1GaN/In_0.2GaN/In_0.1GaN/GaN MQW structure showed an excellent recombination rate of 5.57 × 10²⁸ cm^-3·s^-1 that was more than one order improvement over that of the conventional LED. In addition, the efficiency droop was relieved by the suggested stepped MQW structure.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.177-182
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• 2013

Nanosphere lithography is an inexpensive, simple, high-throughput nanofabrication process. NSL can be done in different ways, such as drop coating, spin coating or by means of tilted evaporation. Nitride-based light-emitting diodes (LEDs) are applied in different places, such as liquid crystal displays and traffic signals. The characteristics of gallium nitride (GaN)-based LEDs can be enhanced by fabricating nanopatterns on the top surface of the LEDs. In this work, we created differently sized (420, 320 and 140 nm) nanopatterns on the upper surfaces of GaN-based LEDs using a modified nanosphere lithography technique. This technique is quite different from conventional NSL. The characterization of the patterned GaN-based LEDs revealed a dependence on the size of the holes in the pattern created on the LED surface. The depths of the patterns were 80 nm as confirmed by AFM. Both the photoluminescence and electroluminescence intensities of the patterned LEDs were found to increase with an increase in the size of holes in the pattern. The light output power of the 420-nm hole-patterned LED was 1.16 times higher than that of a conventional LED. Moreover, the current-voltage characteristics were improved with the fabrication of differently sized patterns over the LED surface using the proposed nanosphere lithography method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.150-150
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• 2008

고효율 LED를 얻기 위해서는 LED의 내부 양자효율과 외부 양자효율이 높아야 한다. 현재 GaN-Based LED의 내부 양자효율은 결정의 질의 개선 및 이중이종접합 또는 다중양자우물 구조와 같이 활성층의 캐리어 농도를 높이는 접합구조로 설계되어 거의 100%에 가까워졌다. 그러나 외부 양자효율은 반도체 재료의 높은 굴절률로 인하여 외부로 탈출하지 못하고 내부로 전반사 되어 반도체 내부에 갇히게 되는데 이처럼 갇힌 빛은 반도체와 중간 Interface에 TIR(total internal reflection) 또는 반사판에 의해 계속적으로 반사 된다. 그러므로 이를 해결하기 위한 플립칩 구조, 포토닉 크리스탈 등의 여러 가지 방법들이 제시되고 있지만 아직도 더 높은 외부 양자 효율의 개선을 요구하고 있다. 본 연구에서는 새로운 형태의 반사판(Al) 즉 p-GaN과 반사판 사이의 interlayer로 반사판과의 오믹 접촉을 고려한 Embo type의 NiO를 구현하여 반사된 빛의 방향을 내부반사를 줄일 수 있는 방향으로 변화시킴으로써 광 추출 효율의 향상을 기대할 수 있게 되었다.

• Korean Journal of Materials Research
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• v.19 no.8
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• pp.443-446
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• 2009

This study develops a highly transparent ohmic contact scheme using indium oxide doped ZnO (IZO) as a current spreading layer for p-GaN in order to increase the optical output power of nitride-based lightemitting diodes (LEDs). IZO based contact layers of IZO, Ni/IZO, and NiO/IZO were prepared by e-beam evaporation, followed by a post-deposition annealing. The transmittances of the IZO based contact layers were in excess of 80% throughout the visible region of the spectrum. Specific contact resistances of $3.4\times10^{-4}$, $1.2\times10^{-4}$, $9.2\times0^{-5}$, and $3.6\times10^{-5}{\Omega}{\cdot}cm^2$ for IZO, Ni/Au, Ni/IZO, and NiO/IZO, respectively were obtained. The forward voltage and the optical output power of GaN LED with a NiO/IZO ohmic contact was 0.15 V lower and was increased by 38.9%, respectively, at a forward current of 20 mA compared to that of a standard GaN LED with an Ni/Au ohmic contact due to its high transparency, low contact resistance, and uniform current spreading.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.454-461
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• 2015

Light enhancement of GaN based light emitting diodes (LEDs) have been investigated by texturing the top p-GaN surface. Nano-textured LEDs have been fabricated using self-assembled Ni nano mask during dry etching process. Experimental results were further compared with simulation data. Three types of LEDs were fabricated: Conventional (planar LED), Surface nano-porous (porous LED) and Surface nano-cluster (cluster LED). Compared to planar LED there were about 100% and 54% enhancement of light output power for porous and cluster LED respectively at an injection current of 20 mA. Moreover, simulation result showed consistency with experimental result. The increased probability of light scattering at the nano-textured GaN-air interface is the major reason for increasing the light extraction efficiency.