• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.27 no.8
• /
• pp.1309-1316
• /
• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO2, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism and determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• Journal of the Korean Society for Precision Engineering
• /
• v.20 no.2
• /
• pp.218-225
• /
• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.120-120
• /
• 2003

The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.21-21
• /
• 2003

To increase the light-emission efficiency of LED, we increased the internal and external quantum efficiency by suppressing the defect formation in the quantum well and by increasing the light extraction efficiency in LED, respectively. First, the internal quantum efficiency was improved by investigating the effect of a low temperature (LT) grown p-GaN layer on the In$\sub$0.25/GaN/GaN MQW in green LED. The properties of p-GaN was optimized at a low growth temperature of 900oC. A green LED using the optimized LT p-type GaN clearly showed the elimination of blue-shift which is originated by the MQW damage due to the high temperature growth process. This result was attributed to the suppression of indium inter-diffusion in MQW layer as evidenced by XRD and HR-TEM analysis. Secondly, we improved the light-extraction efficiency of LED. In spite of high internal quantum efficiency of GaN-based LED, the external quantum efficiency is still low due to the total internal reflection of the light at the semiconductor-air interface. To improve the probability of escaping the photons outside from the LED structure, we fabricated nano-sized cavities on a p-GaN surface utilizing Pt self-assembled metal clusters as an etch mask. Electroluminescence measurement showed that the relative optical output power was increased up to 80% compared to that of LED without nano-sized cavities. I-V measurement also showed that the electrical performance was improved. The enhanced LED performance was attributed to the enhancement of light escaping probability and the decrease of resistance due to the increase in contact area.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.4
• /
• pp.39-43
• /
• 2004

The parallel multi-quantum well structures of blue and amber lights were designed and grown in metal-organic chemical vapor deposition by utilizing integration process on epitaxial layers. Samples were deposited for 5 periods-InGaN multi-quantum well layers for blue light emission and partially etched in order to regrow the 3 periods-InGaN multi-quantum wells for amber light. The blue and amber photoluminescence spectra were observed at the peak wavelengths of 475 and 580 nm, respectively. The chromatic coordinates of the white emitting diode were 0.31 and 0.34.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.5
• /
• pp.192-195
• /
• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.28 no.4
• /
• pp.159-165
• /
• 2018

The demand on use of GaN single crystal substrates for high efficient and environment - friended high power electronic semiconductor has be increased. The industrial business trend on GaN substrate along with its research activities has been reviewed through the recent scientific and technical in formations on the basic of Yole report (2013). The research on the GaN single crystal substrate has been performed continuously for the purpose of the high quality and larger diameter, but its market has not been activated yet.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2000.11a
• /
• pp.729-732
• /
• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting condition. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In order to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber, breaker, and precision servo mechanism in order to dice an semiconductor wafer.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.6
• /
• pp.617-621
• /
• 2013

This study examined the effect of electron-beam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from $4.0{\times}10^{-4}A$, $6.5{\times}10^{-5}A$, $2.7{\times}10^{-8}A$ to $7.7{\times}10^{-5}A$, $7.7{\times}10^{-6}A$, $4.7{\times}10^{-9}A$, respectively, at a drain voltage of -10V. Furthermore, we also investigated the effect of E-beam irradiation on the AlGaN surface in AlGaN/GaN heterostructure high electron mobility transistors(HEMTs). The results showed that the maximum drain current density of the AlGaN/GaN HEMTs with E-beam irradiation was greatly improved, when compared to that of the AlGaN/GaN HEMTs without E-beam irradiation. These results strongly suggest that E-beam irradiation is a promising method to reduce leakage current of AlGaN/GaN HEMTs on sapphire through the neutralization the trap.

• Korean Journal of Materials Research
• /
• v.3 no.6
• /
• pp.645-651
• /
• 1993

The growth of semi-insulating(SI) high resistant undoped GaAs epilayer has been studied to solve the problems ocurring when GaAs IC is fabricated by the widely used ion implantation directly into the SI GaAs substrate. The EPD ditribution of the SI substrates has been examined, and the suitability of the buffer layers grown by MOCVD and MBE, respectively, has been tested for IC fabrication through leakage current measurement. IJngated FET has been fabricated on the SI epilayer and leakage current through the buffer layer has been measured. In the case of MOCVD grown 1$\mu\textrm{m}$-thick buffer layer, the leakage current is as small as about 270nA/mm, and this value does not affect the pinch-off of FET. In this case, the epilayer quality is affected by the substrate defects because the leakage current distribution is coincided with the EPD distribution of the SI substrate. The 2$\mu\textrm{m}$-thick buffer layer grown by MBE, however, has the better quality, and shows the lower leakage current(40nA/mrn) and higher uniformity.