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http://dx.doi.org/10.6111/JKCGCT.2018.28.4.159

The industrial trends of GaN substrates on the power electronic semiconductors  

Lee, Hee Ae (Division of Advanced Materials Science and Engineering, Hanyang University)
Park, Jae Hwa (Division of Advanced Materials Science and Engineering, Hanyang University)
Lee, Joo Hyung (Division of Advanced Materials Science and Engineering, Hanyang University)
Park, Cheol Woo (Division of Advanced Materials Science and Engineering, Hanyang University)
Kang, Hyo Sang (Division of Advanced Materials Science and Engineering, Hanyang University)
In, Jun Hyeong (Division of Advanced Materials Science and Engineering, Hanyang University)
Shim, Kwang Bo (Division of Advanced Materials Science and Engineering, Hanyang University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.28, no.4, 2018 , pp. 159-165 More about this Journal
Abstract
The demand on use of GaN single crystal substrates for high efficient and environment - friended high power electronic semiconductor has be increased. The industrial business trend on GaN substrate along with its research activities has been reviewed through the recent scientific and technical in formations on the basic of Yole report (2013). The research on the GaN single crystal substrate has been performed continuously for the purpose of the high quality and larger diameter, but its market has not been activated yet.
Keywords
GaN substrate; Power electronic; Semiconductor; Industrial trend;
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