• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.48-48
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• 2007

P-type transparent conducting $CuGaO_2$ thin films have been prepared by DC/RF sputtering using Quartz(0001) and sapphire(0001) substrates. The target was fabricated by heating a stoichiometric mixture of CuO and $Ga_2O_3$ at 1373K for 12h under $N_2$ atmosphere. The film were deposited under mixture gas of Ar and $O_2(Ar:O_2=4:1)$ during 10~30min. and the as-deposited films were annealed at 1123K and $N_2$ atmosphere. Room temperature conductivity and the activation energy of the sintered body in the temperature range of 223K ~ 423K were 0 004S/cm, 1.9eV, respectively. XRD revealed that all of the as-deposited films were amorphous. Heating of the films deposited on Quartz substrates above 1123K resulted in crystallization with a second phase of $CuSiO_3$, which was assumed owing to reaction with Quartz substrate. The single phase of $CuGaO_2$ was obtained at the film deposited on the sapphire substrates. The transmittance after annealing of DC- and RF-sputtered films were 55~75% at 550nm. From the transmittance and reflectance measurement. the direct band gap of the DC/RF-sputtered films were 3.63eV and 3.57eV. and there was little difference between DC and RF sputtered films.

• 대한전자공학회논문지
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• 제26권8호
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• pp.1197-1202
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• 1989

In this study, physical properties of silicon dioxide film deposited on GaAs by photo excitation are evaluated using ellisometry, ESCA and AES. Under the pressure of 2-8 torr, silicon dioxide film is deposited on GaAs by photo excitation at 200\ulcorner using gas mixtures of SiH4 and N2O. The measured results show refractive index varies from 1.37 to 1.42 and stoichiometry from 1.97 to 2.09 with process pressure. The observed characteristics of deposition rate are divided into three different regions with process pressure and possible deposition mechanism are also discussed, qualitatively.

• 한국재료학회지
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• 제16권3호
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• 한국재료학회지
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• 제9권12호
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• pp.1216-1221
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• 1999

TMGa와 유전체 장벽방전에 기초한 질소함유 활성종을 이용하여 (0001) 사파이어 기판위에 GaN 박막을 저온에서 성장시켰다. III-V 질소화합물 반도체의 에피막 성장에 있어서 암모니아는 유기금속 화학증착법에서 지금까지 알려진 가장 보편적인 질소 공급원이며 충분한 질소공급을 위해 $1000^{\circ}C$ 이상의 고온 성장이 필수적이다. GaN 박막을 비교적 저온에서 성장시키기 위하여 질소 공급원으로 암모니아 대신 유전체 장벽방전을 이용하였다. 유전체 장벽방전은 전극사이에 유전체 장벽을 설치하여 arc를 조절하는 방전이며 수 기압의 높은 공정압력보다 훨씬 높으므로 기판표면까지 전달하는데도 이점이 있다. GaN 박막의 결정성과 표면형상은 성장온도, 완충층에 따라 변화하였으며, $700^{\circ}C$의 저온에서도 우수한 (0001) 배향성을 갖는 GaN 박막을 성장할 수 있었다.

• 한국결정성장학회지
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• 제21권3호
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• pp.110-113
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• 2011

본 논문에서는 금속촉매를 이용하여 육각형 GaN 피라미드의 꼭지점 부분에만 마이크로 크기의 GaN 구조를 선택적으로 성장시킬 수 있는 결정 성장 방법에 대하여 연구하였다. GaN Template 위에 $SiO_2$ 막을 증착하고 3 ${\mu}m$의 원형 패턴을 형성하여 metal organic vapor phase epitaxy (MOVPE) 방법으로 선택적 결정 성장에 의해 GaN 피라미드를 성장한 후, photolithography 공정을 이용하여 피라미드 꼭지점 부분에만 Au화 Cr을 각각 증착하였다. GaN 피라미드 구조의 꼭지점 부근에만 금속이 증착된 시료를 MOVPE 반응관에 장착하고 10분 동안 GaN 마이크로 구조를 성장하였다. 성장 온도는 650, 700, $750^{\circ}C$로 변화를 주어 특성 변화를 알아보았다. 막대 형상의 마이크로 GaN 구조들은 {1-101} 결정면들을 구성하는 6개의 결정면에 대해 각각 수직한 방향으로 성장되었으며 이들 구조들의 형성조건과 모양은 성장온도와 금속의 종류에 의해 영향을 받는 것을 확인할 수 있었다.

• 한국결정학회지
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• 제5권1호
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• pp.24-32
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• 1994

(0001),(1012) 및 (1120)면 sapphire 기판위에 성장되는 (0001), (1120) 및 (1011)면 GaN epitaxy 박막을 Ga/HCI/NH3/He 계를 사용한 HVPE(halide vapor phase epitaxy)방법에 의하여 성장시키는 연구를 수행하였다. 박막의 표면조직과 결정구조는 XRD, RHEED와 SEM으로 분석하였으며, 성장된 막의 화학적 조성은 XPS로 관찰되었다. (1120) sapphire위에는 각각 (0001)과 (1120) GaN epitaxy 박막의 두가지 배향관계가 관찰되었다. (0001)면 GaN epitaxy 박막은 (0001)과 (1120)면 sapphire 기판위에서 1050℃ 의 고온으로 성장시킬 때 이차원적인 성장구조를 보여주였으며, (1120) sapphire 기판위에 성장된 (1011) GaN 박막이 주사전자현미경과 RHEED 분석결과 가장 좋은 표면조직과 결정구조를 보여주었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1907-1909
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• 1999

In this paper, we report a high quality GaN films with high hole concentrations and low resistivities without post growth treatment using a GAIVBE system equipped with a home-made inductively coupled RF plasma source. The room temperature hole concentrations obtained were $5{\times}10^{17}{\sim}1.6{\times}10^{19}cm^{-3}$, and the mobilities were $2.5{\sim}8cm^2/Vs$. Also we have grown high quality n-type GaN films with the range of electron concentrations of $1.4{\times}10^{17}{\sim}4.7{\times}10^{19}cm^{-3}$ and the mobilities of $180{\sim}410cm^2/Vs$.

• 한국재료학회지
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• 제8권7호
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• pp.591-595
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• 1998

이 연구에서는 HVPE법으로 두께가 350$\mu\textrm{m}$, 면적이 100$\textrm{mm}^2$인 크랙이 없는 freestanding GaN 단결정 기판을 제작하고, 그 특성을 조사하였다. 제작된 GaN 기판의 격자상수는 $c_{o}$ =5.18486$\AA$이었고, 이중 X-선 회절피크의 반치폭은 650 arcsec 이었다. 10K의 온도에서 측정한 PL 스펙트럼은 에너지 밴드 갭 부근에서 중성 도너와 중성 억셉터에 구속된 여기자 및 자유여기자의 소멸에 의한 발광과 결정 결함고 관계하는 깊은 준위에 의한 1.8eV 부근 발광으로 구성되었다. 또한 라만 E2(high)모드 주파수는 567cm-1로서 벌크 GaN 단결정의 값과 같았다. 한편, GaN 기판의 전기저항도형은 n형이었고, 전기 비저항은 0.02$\Omega$.cm이었으며, 캐리어 이동도와 농도는 각각 283$\textrm{cm}^2$/V.s와 1.1$\times$$10^{18}$$cm^{-3}$이었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.174-174
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• 2010

Gallium Nitride(GaN) attracts great attention due to their wide band gap energy (3.4eV), high thermal stability to the solid state lighting devices like LED, Laser diode, UV photo detector, spintronic devices, solar cells, sensors etc. Recently, researchers are interested in synthesis of polycrystalline and amorphous GaN which has also attracted towards optoelectronic device applications significantly. One of the alternatives to deposit GaN at low temperature is to use Single Source Molecular Percursor (SSP) which provides preformed Ga-N bonding. Moreover, our group succeeds in hybridization of SSP synthesized GaN with Single wall carbon nanotube which could be applicable in field emitting devices, hybrid LEDs and sensors. In this work, the GaN thin films were deposited on c-axis oriented sapphire substrate by MBE (Molecular Beam Epitaxy) using novel single source precursor of dimethyl gallium azido-tert-butylamine($Me_2Ga(N_3)NH_2C(CH_3)_3$) with additional source of ammonia. The surface morphology, structural and optical properties of GaN thin films were analyzed for the deposition in the temperature range of $600^{\circ}C$ to $750^{\circ}C$. Electrical properties of deposited thin films were carried out by four point probe technique and home made Hall effect measurement. The effect of ammonia on the crystallinity, microstructure and optical properties of as-deposited thin films are discussed briefly. The crystalline quality of GaN thin film was improved with substrate temperature as indicated by XRD rocking curve measurement. Photoluminescence measurement shows broad emission around 350nm-650nm which could be related to impurities or defects.

• 한국재료학회지
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• 제23권3호
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.