Physical properties of Silicon Dioxide Film Deposited on GaAs by Photo Excitation

GaAs기판위에 형성된 광여기 산화막의 물리적 특성

In this study, physical properties of silicon dioxide film deposited on GaAs by photo excitation are evaluated using ellisometry, ESCA and AES. Under the pressure of 2-8 torr, silicon dioxide film is deposited on GaAs by photo excitation at 200\ulcorner using gas mixtures of SiH4 and N2O. The measured results show refractive index varies from 1.37 to 1.42 and stoichiometry from 1.97 to 2.09 with process pressure. The observed characteristics of deposition rate are divided into three different regions with process pressure and possible deposition mechanism are also discussed, qualitatively.