• Title/Summary/Keyword: GaN(Gallium Nitride)

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A 6-16 GHz GaN Distributed Power Amplifier MMIC Using Self-bias

  • Park, Hongjong;Lee, Wonho;Jung, Joonho;Choi, Kwangseok;Kim, Jaeduk;Lee, Wangyong;Lee, Changhoon;Kwon, Youngwoo
    • Journal of electromagnetic engineering and science
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    • v.17 no.2
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    • pp.105-107
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    • 2017
  • The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

Transient-State Parameter Extraction and Evaluation of GaN FET (GaN FET의 과도특성 파라미터 추출 및 평가)

  • Ahn, Jung-Hoon;Lee, Byoung-Kuk;Kim, Nam-Jun;Kim, Jong-Soo
    • Proceedings of the KIPE Conference
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    • 2013.11a
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    • pp.192-193
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    • 2013
  • 본 논문에서는 WBG(Wide Band Gap)특성을 갖는 GaN FET의 과도특성을 분석한다. 먼저, GaN(Gallium Nitride) FET의 공개된 정보를 바탕으로 스위칭 과도 특성과 관련된 파라미터들을 정량적으로 추출하고, GaN FET의 동특성을 반영하는 시뮬레이션 모델을 구성한다. 이 모델을 통하여 Si MOSFET과 비교하여 GaN FET의 성능을 예측한다.

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Commercialization and Research Trends of Next Generation Power Devices SiC/GaN (차세대 파워디바이스 SiC/GaN의 산업화 및 학술연구동향)

  • Cho, Mann;Koo, Young-Duk
    • Journal of Energy Engineering
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    • v.22 no.1
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    • pp.58-81
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    • 2013
  • Recently, the technological progress in manufacturing power devices based on wide bandgap materials, for example, silicon carbide(SiC) or gallium nitride(GaN), has resulted in a significant improvement of the operating-voltage range and switching speed and/or specific on resistance compared with silicon power devices. This paper will give an overview of the status on The Next generation Power Devices such as SiC/GaN with a focus on commercialization and research.

Pt-AlGaN/GaN HEMT-based hydrogen gas sensors with and without SiNx post-passivation

  • Vuong, Tuan Anh;Kim, Hyungtak
    • Journal of IKEEE
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    • v.23 no.3
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    • pp.1033-1037
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    • 2019
  • GaN-based sensors have been widely investigated thanks to its potential in detecting the presence of hydrogen. In this study, we fabricated hydrogen gas sensors with AlGaN/GaN heterojunction and investigated how the sensing performance to be affected by SiN surface passivation. The gas sensor employed a high electron mobility transistors (HEMTs) with 30 nm platinum catalyst as a gate to detect the hydrogen presence. SiN layer was deposited by inductively-coupled chemical vapor deposition as post-passivation. The sensors with SiN passivation exhibited hydrogen sensing characteristics with various gas flow rates and concentrations of hydrogen in inert background gas at $200^{\circ}C$ similar to the ones without passivation. Aside from quick response time for both sensors, there are differences in sensitivity and recovery time because of the existence of the passivation layer. The results also confirmed the dependence of sensing performance on gas flow rate and gas concentration.

Technical Trends of Semiconductors for Harsh Environments (극한 환경용 반도체 기술 동향)

  • Chang, W.;Mun, J.K.;Lee, H.S.;Lim, J.W.;Baek, Y.S.
    • Electronics and Telecommunications Trends
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    • v.33 no.6
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    • pp.12-23
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    • 2018
  • In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

S-Band Low Noise Amplifier Based on GaN HEMT for High Input Power Robustness (고입력 내성을 위한 GaN HEMT 기반 S-대역 저잡음 증폭기)

  • Kim, Hong-Hee;Kim, Sang-Hoon;Choi, Jin-Joo;Choi, Gil-Wong;Kim, Hyoung-Joo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.2
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    • pp.165-170
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    • 2015
  • In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm.

Surface Analysis of Plasma Pretreated Sapphire Substrate for Aluminum Nitride Buffer Layer

  • Jeong, Woo Seop;Kim, Dae-Sik;Cho, Seung Hee;Kim, Chul;Jhin, Junggeun;Byun, Dongjin
    • Korean Journal of Materials Research
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    • v.27 no.12
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    • pp.699-704
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    • 2017
  • Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor

  • Kang, Hye Su;Seo, Jae Hwa;Yoon, Young Jun;Cho, Min Su;Kang, In Man
    • Journal of Electrical Engineering and Technology
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    • v.11 no.6
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    • pp.1763-1768
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    • 2016
  • This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two-dimensional (2-D) technology computer-aided design (TCAD) simulations. The CAVETs are considered as the alternative device due to their high breakdown voltage and high integration density in the high-power applications. The optimized design for the CAVET focused on the electrical performances according to the different gate-source length ($L_{GS}$) and aperture length ($L_{AP}$). We analyze DC and RF parameters inducing on-state current ($I_{on}$), threshold voltage ($V_t$), breakdown voltage ($V_B$), transconductance ($g_m$), gate capacitance ($C_{gg}$), cut-off frequency ($f_T$), and maximum oscillation frequency ($f_{max}$).

Large Signal Determination of Non-Linear Output Capacitance of Gallium-Nitride Field Effect Transistors from Switch-Off Voltage Transients - A Numerical Method

  • Pentz, David;Joannou, Andrea
    • Journal of Power Electronics
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    • v.18 no.6
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    • pp.1912-1919
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    • 2018
  • The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.

Single Crystal Growing of Gallium Nitride Films on (0001), (10${\bar{1}}$2) and(11${\bar{2}}$0) Sappire ((0001), (10${\bar{1}}$2)와 (11${\bar{2}}$0) Sapphire 기판에서 Gallium Nitribe 단결정 박막의 성장)

  • 황진수;알렉산
    • Korean Journal of Crystallography
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    • v.5 no.1
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    • pp.24-32
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    • 1994
  • The study of (0001), (1120) and (1011) GAN epitaxy films grown on the (0001),(1012) and (1120) α-Al2O3 substrates have been investigated using the haliar vapor phaes epitaxy(HVPE) method in Ga/HCI/NH3/He system. XRD, RHEED and SEM are used for the study of the films struction and surface morphology. Chemical composition of the film surface is estimsted by XPS. The following orientation relationships are observed; (0001) GaN /(0001) Al2O3 (1120) GaN/ (1012) Al2O3 and (0001) and (1011) GaN/ (1120) Al2O3 in accordance with growth conditions. The (0001) GaN films grown on(0001) and (1120) a-Al2O3 substrates at higer temperature(1050℃) have shown two dimensional grownth mechanism. Form SEM and RHEED, the smoother surface morphology and better structure are observed for the (1011) GaN films grown on (1120) sapphire at higer temperature.

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