• Structural Engineering and Mechanics
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• v.74 no.5
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• pp.611-633
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• 2020

In this paper, a comprehensive review of nanostructures that exhibit piezoelectric behavior on all mechanical, buckling, vibrational, thermal and electrical properties is presented. It is firstly explained vast application of materials with their piezoelectric property and also introduction of other properties. Initially, more application of material which have piezoelectric property is introduced. Zinc oxide (ZnO), boron nitride (BN) and gallium nitride (GaN) respectively, are more application of piezoelectric materials. The nonlocal elasticity theory and piezoelectric constitutive relations are demonstrated to evaluate problems and analyses. Three different approaches consisting of atomistic modeling, continuum modeling and nano-scale continuum modeling in the investigation atomistic simulation of piezoelectric nanostructures are explained. Focusing on piezoelectric behavior, investigation of analyses is performed on fields of surface and small scale effects, buckling, vibration and wave propagation. Different investigations are available in literature focusing on the synthesis, applications and mechanical behaviors of piezoelectric nanostructures. In the study of vibration behavior, researches are studied on fields of linear and nonlinear, longitudinal and transverse, free and forced vibrations. This paper is intended to provide an introduction of the development of the piezoelectric nanostructures. The key issue is a very good understanding of mechanical and electrical behaviors and characteristics of piezoelectric structures to employ in electromechanical systems.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.783-789
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• 2015

This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of -25.7 dBc at an average output power of 33.4 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.9
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• pp.685-697
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• 2017

In this paper, it is presented the result of design and fabrication for C-band solid state high power amplifier unit and components using in search radar. The solid state power amplifier(SSPA) assembly was fabricated using GaN(Gallium Nitride), which is semiconductor device, and the transmit signal output power of the solid state high power amplifier unit is generated by combining the transmit signal power of the solid state power amplifier configured in parallel through a design and fabricated waveguide type transmit signal combine assembler. Designed solid state high power amplifier unit demonstrated C-band 500 MHz bandwidth, maximum 10.5% duty cycle, transmit pulse width from $0.0{\mu}s{\sim}000{\mu}s$, and transmit signal power is 44.98 kW(76.53 dBm).

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.6
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• pp.818-823
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• 2014

A high-gain wideband low noise amplifier (LNA) using $0.25-{\mu}m$ Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 GHz to 15 GHz operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of $25.1{\pm}0.8dB$ and input and output matching of -12 dB for all targeted frequencies. The measured minimum noise figure is 2.8 dB at 12.6 GHz and below 3.6 dB across all frequencies. It consumes 98 mA with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 dB to 24 dB with no significant variations of the input and output matching.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.6
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• pp.467-478
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• 2019

This paper describes the development and measurement results of a wide-band planar active phase array antenna system for an electronic warfare jamming transmitter. The system is designed as an $8{\times}8$ triangular lattice array using a $45^{\circ}$ slant wide-band antenna. The 64-element transmission channel is composed of a wide-band gallium nitride(GaN) solid state power amplifier and a gallium arsenide(GaAs) multi-function core chip(MFC). Each GaAs MFC includes a true-time delay circuit to avoid a wide-band beam squint, a digital attenuator, and a GaAs drive amplifier to electronically steer the transmitted beam over a ${\pm}45^{\circ}$ azimuth angle and ${\pm}25^{\circ}$ elevation angle scan. Measurement of the transmitted beam pattern is conducted using a near-field measurement facility. The EIRP of the designed system, which is 9.8 dB more than the target EIRP performance(P), and the ${\pm}45^{\circ}$ azimuth and ${\pm}25^{\circ}$ elevation beam steering fulfill the desired specifications.

• Tribology and Lubricants
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• v.35 no.5
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.2
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• pp.152-155
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• 2020

This study proposes an input filter for a gallium-nitride-based direct matrix converter with a stepless current commutation technique. Various current commutation strategies have been adopted for reliable operation of switches. These strategies are complex to be implemented and require additional components. The stepless current commutation technique is simple to operate but causes overcurrent issues due to the occurrence of short circuit on input sources. In this study, to restrict the short circuit current, we utilized GaN devices with fast switching properties and modified the input filter. The proposed input filter was verified by experimental results of induction motor drive.

• KIPE Magazine
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• v.27 no.3
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• pp.38-48
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• 2022

국내 통신 시장은 4G LTE 통신 상용화 이후 2019년 세계 최초로 5G 통신 상용화를 시작하여 각각의 통신사가 앞다투어 설비 투자를 진행하고 있다. 많은 투자가 진행됨에도 불구하고 통신망의 범위, 낙후 지역에 대한 비활성화로 인하여 소비자의 욕구를 충족시키지 못하고 있는 실정이다. 이러한 소비자의 불만족을 해소시키고자 정부의 투자 독려로 인해 2022-2024년까지 지속적으로 5G 장비 투자가 진행될 예정이다. 5G 통신 장비에는 시스템 장비에 전원을 공급해주는 전원 장치가 필요하다. 최근 통신용 전원 장치는 시스템 용량이 증가함에 따라 고전력 장비가 요구되고 있으며, 추가적으로 탄소 배출과 관련하여 에너지 문제가 대두됨에 따라 소형화 및 고효율의 통신용 전원 장치 개발이 주를 이루고 있다. 이를 위해 WBG(Wide Band-Gap) 소자 및 토폴로지 변경, 열적 최적화 등 다양한 방법을 통해 고밀도, 고효율을 달성하고 있다. 본고는 WBG 소자 중 GaN(Gallium Nitride) 전력 반도체를 이용하여 제작한 전원 장치의 설계에 내한 내용을 소개한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.133-140
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• 2024

This study offers a comprehensive evaluation of the role and impact of advanced power semiconductors in solar module systems. Focusing on silicon carbide (SiC) and gallium nitride (GaN) materials, it highlights their superiority over traditional silicon in enhancing system efficiency and reliability. The research underscores the growing industry demand for high-performance semiconductors, driven by global sustainable energy goals. This shift is crucial for overcoming the limitations of conventional solar technology, paving the way for more efficient, economically viable, and environmentally sustainable solar energy solutions. The findings suggest significant potential for these advanced materials in shaping the future of solar power technology.