• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.230-233
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• 2004

The stochiometric mix of evaporating materials for the $CuInS_2$ single crystal thin films was prepared from horizontal furnance. Using extrapolation method of X-ray diffraction patterns for the $CuInS_2$ polycrystal, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.524\;{\AA}$ and $11.142\;{\AA}$, respectively. To obtain the single crystal thin films, $CuInS_2$ mixed crystal was deposited on throughly etched semi-insulator GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperature were 640 t and 430 t, respectively and the thickness of the single crystal thin films was $2{\mu}m$. Hall effect on this sample was measured by the method of van dot Pauw and studied on carrier density and temperature dependence of mobility. The carrier density and mobility deduced from Hall data are $9.64{\times}10^{22}/m^3,\;2.95{\times}10^{-2}\;m^2/V{\cdot}s$ at 293 K, respectively The optical energy gaps were found to be 1.53 eV at room temperature. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the thin film, we have found that the values of spin orbit coupling splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 0.0211 eV and 0.0045 eV at 10 K, respectively. From PL peaks measured at 10K, 807.7nm (1.5350ev) mean Ex peak of the free exciton emission, also 810.3nm (1.5301eV) expresses $I_2$ peak of donor-bound exciton emission and 815.6nm (1.5201eV) emerges $I_1$ peak of acceptor-bound exciton emission. In addition, the peak observed at 862.0nm (1.4383eV) was analyzed to be PL peak due to donor-acceptor pair(DAP).

• 한국전기전자재료학회논문지
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• 제24권1호
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• pp.12-16
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• 2011

In this study, we fabricated the flexible pentacene TFTs with the polymer gate dielectric and contact printing method by using the silver nano particle ink as a source/drain material on plastic substrate. In this experiment, to lower the cross-linking temperature of the PVP gate dielectric, UV-Ozone treatment has been used and the process temperature is lowered to $90^{\circ}C$ and the surface is optimized by various treatment to improve device characteristics. We tried various surface treatments; $O_2$ Plasma, hexamethyl-disilazane (HMDS) and octadecyltrichlorosilane (OTS) treatment methods of gate dielectric/semiconductor interface, which reduces trap states such as -OH group and grain boundary in order to improve the OTFTs properties. The optimized OTFT shows the device performance with field effect mobility, on/off current ratio, and the sub-threshold slope were extracted as $0.63cm^2 V^{-1}s^{-1}$, $1.7{\times}10^{-6}$, and of 0.75 V/decade, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.519-525
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• 2015

Positive bias stress-induced instability in amorphous indium-gallium-zinc-oxide (a-IGZO) bottom-gate thin-film transistors (TFTs) was investigated under high $V_{GS}$/low $V_{DS}$ and low $V_{GS}$/high $V_{DS}$ stress conditions through incorporating a forward/reverse $V_{GS}$ sweep and a low/high $V_{DS}$ read-out conditions. Our results showed that the electron trapping into the gate insulator dominantly occurs when high $V_{GS}$/low $V_{DS}$ stress is applied. On the other hand, when low $V_{GS}$/high $V_{DS}$ stress is applied, it was found that holes are uniformly trapped into the etch stopper and electrons are locally trapped into the gate insulator simultaneously. During a recovery after the high $V_{GS}$/low $V_{DS}$ stress, the trapped electrons were detrapped from the gate insulator. In the case of recovery after the low $V_{GS}$/high $V_{DS}$ stress, it was observed that the electrons in the gate insulator diffuse to a direction toward the source electrode and the holes were detrapped to out of the etch stopper. Also, we found that the potential profile in the a-IGZO bottom-gate TFT becomes complicatedly modulated during the positive $V_{GS}/V_{DS}$ stress and the recovery causing various threshold voltages and subthreshold swings under various read-out conditions, and this modulation needs to be fully considered in the design of oxide TFT-based active matrix organic light emitting diode display backplane.

• 대한화학회지
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• 제38권1호
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• pp.34-40
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• 1994

다이오드 레이저를 optogalvanic spectroscopy에 이용하여 우라늄, 토륨 및 루비듐에 대한 전자전이 및 다이오드 레이저의 분광학적 특성을 살펴보았다. 흡수스펙트럼의 분석은 속빈 음극관내 음극표면에서 튕김에 의해 형성된 고온의 금속원자 기체를 다이오드 레이저를 이용하여 금속원자의 광흡수 현상에 따른 임피던스의 변화를 측정함으로써 수행되었다. 다이오드 레이저를 사용하여 자연산 악티늄족 원소인 토륨과 우라늄의 검출을 수행하였다. 본 실험에 이용된 optogalvanic spectroscopy에서는 Doppler효과로 인한 띠 나비에 제한이 있어 초미세 갈라짐이나 동위원소 선이동을 관찰하는데 어려움이 있었다. 하지만 루비듐 780.023 nm에서는 Doppler 띠 넓힘이 있음에도 불구하고 동위원소의 선이동과 초미세 갈라짐을 관찰할 수 있었다. 본 연구에서는 다이오드 레이저가 방사능을 지닌 악티늄족 원소들의 검출과 이들의 동위원소 존재비를 측정할 때 유용하고, 별로 알려지지 않은 란탄족 및 악티늄족의 초미세 갈라짐 상수와 같은 분광학적으로 중요한 파라미터를 구하는데에도 긴요하게 쓰일 수 있음을 고찰하였다.

• 한국지반공학회논문집
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• 제30권9호
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• pp.67-75
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• 2014

방대한 저장량으로 차세대 에너지원으로 평가받는 메탄가스 하이드레이트는 생산과정에서 유발될 수 있는 문제를 최소화하고 최적의 생산조건을 선정하기 위한 하이드레이트 포함한 다공질 재료의 THM 현상에 대한 프로그램의 개발이 절실하다. 기존의 해석 프로그램들은 국제공동연구를 통하여 프로그램들간의 상호 비교검증을 진행하고 있으나, 예측값의 불일치와 수렴성에 문제가 있는 것으로 나타났다. 본 논문에서는 다공질 재료내 메탄 하이드레이트의 해리 현상을 해석할 수 있는 fully coupled THM 유한요소 프로그램을 개발하였다. Methane hydrate, soil, water, 및 methane gas의 질량보존의 법칙, 에너지 보존의 법칙, 그리고 힘평형 방정식으로부터 지배방정식을 유도하였다. 다양한 주변수들의 조합을 통하여 주변수를 변위, 가스 포화도, 유체압, 온도, 하이드레이트 포화도로 선택하였으며, 상변화 전영역에서 해석이 가능하도록 하였다. 하이드레이트의 해리를 예측하는 모델은 kinetic model을 이용하였다. 개발된 THM 유한요소 프로그램을 이용하여 메탄가스 생산에 관한 Masuda의 실내 모형실험 결과와 비교적 분석을 수행하였으며, 해의 수렴성과 안정성을 확인할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.260-260
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• 2011

투명 비정질 산화물반도체는 디스플레이의 구동소자인 박막 트랜지스터에 채널층으로 사용된다. 또한 투명하면서 유연성이 있는 소자를 저비용으로 제작할 수 있는 장점을 가진다. 투명 산화물반도체 재료 중 IGZO는 Si 또는 GaAs와 같은 공유결합성 반도체와는 다른 전자 배치로 전도대가 금속이온의 ns 궤도에서 형성되며, 가전도대가 산소 음이온의 2p 궤도에서 형성된다. 특히 큰 반경의 금속 양이온은 인접한 양이온과 궤도 겹침이 크게 발생하게 되며 캐리어의 효과적인 이동 경로를 제공해줌으로써 다른 비정질 반도체와는 다르게 높은 전하이동도(~10 $cm^2$/Vs)를 가진다. 따라서 저온공정에서 우수한 성능의 TFT소자를 제작할 수 있는 장점이 있다. 본 연구에서는 TFT 채널층으로 사용하기 위한 a-IGZO박막의 산소분압에 따른 특성변화를 분석 하였다. a-IGZO박막은 Pulsed Laser Deposition (PLD)를 이용하여 산소분압(20~200 mTorr) 변화에 따라 Glass기판에 증착하였다. 증착된 a-IGZO 박막의 구조적 특성으로는 X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), 광학적 특성은 UV-vis spectroscopy 분석을 통해서 알아보았다. TFT 채널층의 조건으로는 낮은 off-current, 높은 on-off ratio를 위해 고저항 ($10^3\;{\Omega}cm$)의 진성반도체 성질과 source/drain금속과의 낮은 접촉저항(ohmic contact) 등의 전기적 성질이 필요하다. 따라서 이러한 전기적 특성확인을 위해 transmission line method (TLM)을 사용하여 접촉저항과 비저항을 측정하였고, 채널층으로 적합한 분압조건을 확인해볼 수 있었다.

• 한국산업보건학회지
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• 제27권4호
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• pp.361-370
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• 2017

Objectives: This study evaluated the diesel engine exhaust (DEE) exposure levels of door-to-door deliverers in Daegu from July to September. Methods: We measured exposure levels of DEE surrogates for the same door-to-door deliverers who joined the particulate matter 2.5 exposure study previously published in this journal. Black carbon(BC) concentrations were measured using real-time BC monitoring devices with 1 minute interval. $NO_2$ concentrations were monitored using passive badges. DEE exposure data were analyzed using the same characteristics and GPS information as the first study. Results: A total of 40 measurements of BC concentrations and $NO_2$ concentrations were collected during delivery of parcels. The average exposure levels to BC, and $NO_2$ were $2.23{\mu}g/m^3$ ($0.001-350.85{\mu}g/m^3$) and 21.26 ppb(3.3-61.37 ppb), respectively. Exposure levels to BC according to the day of a week and coverage areas were not significantly different(p>0.05). Delivery trucks manufactured before 2006 caused significantly higher exposure to BC than the trucks manufactured after 2006(p<0.05). Exposure levels of BC integrated for each time in residential area and roadsides were $1.96{\mu}g/m^3$ and $3.46{\mu}g/m^3$, respectively, and the difference was statistically significant(p<0.001). The Pearson correlation coefficients between the ambient $PM_{2.5}$ and BC was significant, r=0.26(p<0.01); however, the correlations between $PM_{2.5}$ and ambient $PM_{2.5}$, and between BC of DEE and $PM_{2.5}$ of DEE did not show a significant correlation Conclusions: BC and $NO_2$ exposure levels were significantly lower when door-to-door deliverers drove newer trucks. BC exposure levels of deliverers were higher in roadsides than in residential area. DEE from nearby vehicles through open windows might be the main source of BC exposure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국약용작물학회지
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• 제23권5호
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• pp.385-394
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• 2015

Background : Dibenzocyclooctadiene lignans are secondary metabolites present abundantly in the fruits belonging to the genus Schisandra. According to previous studies, Schisandra lignans exhibit anti-inflammatory, anti-cancer and anti-diabetic properties, as well as an inhibitory effect on platelet aggregation. Therefore, establishing the Korean "Omija" (Schisandra chinensis) as a lignan-rich source, in addition to identifying and quantifying the lignans, is extremely valuable. Methods and Results : Dibenzocyclooctadiene lignans were analyzed with liquid chromatography using diode array detection/mass spectrometry, from methanol extracts subsequently identified by a constructed chemical library of 50 lignans. A total of 27 components of lignan including gomisin S were identified, of which schisandrin, gomisin A, gomisin N, deoxyschisandrin, ${\gamma}$-schisandrin, and schisandrin C were identified as the major components in the Korean Omija, Schisandra chinensis. These compounds were divided into two groups, S-biphenyl and R-biphenyl based on the configurations of the stereoisomers structures with contents of 661.7 and 1350.1mg per 100 g dry weight, respectively. The total lignan content averaged 2011.4mg per 100 g dry weight, of which schisandrin and gomisin N comprised the majority (771.8 and 420.5mg per 100 g dry weight respectively). Conclusions : Lignans which are present in high quantities in the ripe fruit of Schisandra chinensis are important functional compounds that play a major role in the prevention and treatment of human diseases.