• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.213-216
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• 2003

Recently a new high power device GCT (Gate Commutated Turn-off) thyristor has been successfully introduced to high power converting application areas. GCT thyristor has a quite different turn-off mechanism to the GTO thyristor. All main current during turn-off operation is commutated to the gate. Therefore, IGCT thyristor has many superior characteristics compared with GTO thyristor; especially, snubberless tum-off capacibility and higher turn-on capacibility. The basic structure of the GeT thyristor is same as that of the GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. The turn-off characteristic of the GCT thyristor is influenced by the minority carrier lifetime and the performance of the gate drive unit. In this paper, we present turn-off characteristics of the 2.5kV PT(Punch-Through) type GCT as a function of the minority carrier lifetime and variation of the doping profile shape of p-base region.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1012-1015
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• 1992

A gate-turn-off thyristor (GTO) that has a fuction of self-commutation is a device that can be turned on like a thyristor with a single pulse of gate current and turned-off by injecting a negative gate current pulse. GTOs have been in existence almost from the beginning of thyristor era, recently are these devices being developed with large power-handling capabilities and improved performance, and they are gaining popularity In conversion equipment. In this paper, the effects of internal parameters of GTO model using a circuit containing two transistors and three resistors the switching operation and the turn-off snubber characteristics is investigated using SPICE program.

• Proceedings of the KSR Conference
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• 2007.11a
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• pp.1438-1444
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• 2007

Standard Gate Turn Off (GTO) Thyristor drive technology results in inhomogeneous turn-on and turn-off transients which in turn needs costly dv/dt and di/dt snubber circuits. Added to this GTO is bulky in size, needs external cooling, slower switching time etc. The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO technology. Indian Railway has developed first IGBT based traction converter and was commissioned in November 2006. Some of the supremacy of IGBT are smaller in size, no external cooling is required, built in power supply which enhances reliability, lower switching losses which leads to higher efficiency, reduced gate drive, high frequency operation in real time etc. These advantages are highlighted along with IGBT Traction system in operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.

• JOURNAL OF ELECTRICAL WORLD
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• s.277
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• pp.69-77
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• 2000

최근 전력설비 운용상의 여러 가지 과제에 대한 유망한 해결책으로서 파워일렉트로닉스 기기를 사용한 FACTS(Flexible AC Transmission System)가 주목을 받고 있다. 그 중에서도 자려식 변환기를 사용한 FACTS기기는 계통의 유효전력$\cdot$무효전력을 계통의 상태에 의존하지 않고 자유롭게 제어할 수 있어, 계통운용의 유연성을 비약적으로 확대할 수 있는 가능성이 있다. 미쓰비시전기는 전력기기간 계통에서의 자려식 변환기 응용의 파이어니어로서 1991년 간사이전력(주) 태산개폐소에 80Mvar SVG(전지형 무효전력발생장치)를 납품하였으며 또한 자원에너지청의 ''연계강화기술개발'' 보조사업으로 도쿄전력(주)을 비롯하여 전력회사 각사, 전원개발(주)와 (재)전력중앙연구소의 지도 하에 3단자 BTB(Back to Back) 실증시스템용으로 세계 최초의 6인치 GTO(Gate Turn-off Thyristor)를 사용한 53MVA의 자려식 변환기를 제작납품하여 수백MVA 클래스의 자려식변환기 제작기술을 확립하였다. 또한 최근에는 동사가 개발한 신소자 GCT(Gate Commutated Turn-off Thyristor)는 지금까지 대용량 자려식 변환기의 커다란 과제였던 운전손실을 반감할 수 있을 것으로 기대되고 있다. 한편 배전 분야에서는 전압변동, 고조파, 순간전압강하 등의 과제가 증가하고 있어, 미쓰비시전기는 이에 응할 수 있는 파워일렉트로닉스 기기로서 콤팩트 SVG(Static Var Generator), SSTS(Solid-state Transfer Switch), 액티브필너를 다수 납품하여 전력품질문제 해결에 공헌하고 있다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.1
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• pp.3-8
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• 1987

The conventional autosequentially commutated current-fed inverter (ASCI) is widely employed with the induction motor drives for speed control. Howener, this inverter has a limit of high power and high frequency indution motor drives. One of the limitations is to be found in the commutation capacitors in the main circuit of this inverter. A new current-fed gate turn-off thyristor (GTO) inverter is developed. This inverter is composed of the main GTO bridge configuration and the improved energy rebound circuit (ERC)without the commutation capacitor. This inverter works stable at high frequency from light load to heavy one. The improved ERC is used not only to rebound the load reactive power to the dc link, but also to return the power in the load to the ac source. The new GTO inverter circuit and the characteristics of the inverter induction motor drives are explained and analyzed.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.1016-1018
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• 1992

A numerical model of a three junction device is presented. It allows the simulation of the external characteristics of the PNPN family devices and in this work the simulation of gate turn-off thyristor(GTO) is particularly considered. The proposed PNPN device simulation model solves all the drawbacks presented by the previous work, simulates the GTO well, and fulfills.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.777-780
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• 1993

An insulated gate bipolar transistor(IGBT) is a MOS gate turn on/off bipolar transistor which combines the attributes of the MOSFET and bipolar transistor. Because of its limitation of power capability compared to thyristor or GTO, some parallel connection of IGBT has been studied to improve the limitation of current capabillity. In this paper, the switching effects from the unbalance of internal parameters of IGBT and the turn-off snubber characteristics are investigated using SPICE program.

• Journal of Electrical Engineering and Technology
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• v.3 no.3
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• pp.391-400
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• 2008

Multi-pulse topology of converters using elementary six-pulse GTO - VSC (gate turn off based voltage source converter) operated under fundamental frequency switching (FFS) control is widely adopted in high power rating static synchronous compensators (STATCOM). Practically, a 48-pulse ($6{\times}8$ pulse) configuration is used with the phase angle control algorithm employing proportional and integral (PI) control methodology. These kinds of controllers, for example the ${\pm}80MVAR$ compensator at Inuyama switching station, KEPCO, Japan, employs two stages of magnetics viz. intermediate transformers (as many as VSCs) and a main coupling transformer to minimize harmonics distortion in the line and to achieve a desired operational efficiency. The magnetic circuit needs altogether nine transformers of which eight are phase shifting transformers (PST) used in the intermediate stage, each rating equal to or more than one eighth of the compensator rating, and the other one is the main coupling transformer having a power rating equal to that of the compensator. In this paper, a two-level 48-pulse ${\pm}100MVAR$ STATCOM is proposed where eight, six-pulse GTO-VSC are employed and magnetics is simplified to single-stage using four transformers of which three are PSTs and the other is a normal transformer. Thus, it reduces the magnetics to half of the value needed in the commercially available compensator. By adopting the simple PI-controllers, the model is simulated in a MATLAB environment by SimPowerSystems toolbox for voltage regulation in the transmission system. The simulation results show that the THD levels in line voltage and current are well below the limiting values specified in the IEEE Std 519-1992 for harmonic control in electrical power systems. The controller performance is observed reasonably well during capacitive and inductive modes of operation.

• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.