• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.132-133
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• 2006

PRAM (phase-change random access memory)은 전류 펄스 인가에 따른 기록매질의 비정질-결정질 간 상변화와 그에 동반되는 저항변화를 이용하는 차세대 비휘발성 메모리 소자로서 연구되어지고 있다. 본 논문에서는 $(GeTe)_x(Sb_2Te_3)$ pseudobinary line을 따르는 조성(x=0.5, 1, 2, 8)의 벌크 및 박막시료를 제작하고 원자-스케일의 구조적 상변화를 분석하였다. 열증착을 이용하여 Si 기판위에 200nm 두께의 박막을 형성, 질소분위기 하에서 100-450도 범위에서 열처리 하였다. XRD를 통해 열처리 온도에 따른 구조적 분석을 실시하였다. x=8의 조성을 제외한 전체 박막에 대해 열처리 온도 증가에 따라 fcc와 hexagonal 구조가 순차적으로 나타났으며 일부에서는 혼종의 상구조를 보였다. 특히, $Ge_2Sb_2Te_5$ 박막에 대하여 EXAFS (extended x-ray absorption fine structure) 및 XPS를 이용하여 상변화의 원자-스케일 구조분석을 하였다.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3690-3694
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• 2013

The $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) is a new species. Its cycloaddition reactions is a new area for the study of germylene chemistry. The mechanism of the cycloaddition reaction between singlet state Cl2Ge=Ge: and formaldehyde has been investigated with CCSD(T)//MP2/$6-31G^*$ method. From the potential energy profile, it could be predicted that the reaction has only one dominant reaction pathway. The reaction rule presented is that the two reactants first form a fourmembered Ge-heterocyclic ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge: atom in the four-membered Ge-heterocyclic ring germylene and the ${\pi}$ orbital of formaldehyde forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the four-membered Ge-heterocyclic ring germylene further combines with formaldehyde to form an intermediate. Because the Ge: atom in intermediate hybridizes to an $sp^3$ hybrid orbital after transition state, then, intermediate isomerizes to a spiro-Ge-heterocyclic ring compound via a transition state. The research result indicates the laws of cycloaddition reaction between $H_2Ge=Ge:$ and formaldehyde, and laid the theory foundation of the cycloaddition reaction between $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) and asymmetric ${\pi}$-bonded compounds, which is significant for the synthesis of small-ring and spiro-Ge-heterocyclic compounds. The study extends research area and enriches the research content of germylene chemistry.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.78-78
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• 2000

다결정 실리콘-게르마늄 (poly-SiGe)은 태양전지 개발에 있어서 중요한 물질이다. 우리는 소량의 Ge(x=0.05)으로부터 다량의 Ge(x=0.67)을 함유한 수소화된 비정질 실리콘-게르마늄 (a-SiGe:H) 박막의 고상결정화 과정을 ESR (electron spin resonance)방법으로 조사해보았다. 먼저 PECVD 방법으로 Corning 1737 glass 위에 a-Si1-xGex:H 박막을 증착시켰다. 증착가스는 SiH4, GeH4 가스를 썼으며, 기판온도는 20$0^{\circ}C$, r.f. 전력은 3W, 증착시 가스압력은 0.6 Torr 정도이었다. 증착된 a-SiGe:H 박막은 $600^{\circ}C$ N2 분위기에서 다시 가열되어 고상결정화 되었고, 결정화 정도는 XRD (111) peak의 세기로부터 구해졌다. ESR 측정은 상온 x-band 영역에서 수행되었다. 측정된 ESR스팩트럼은 두 개의 Gaussian 함수로써 Si dangling-bond와 Ge dangling-bond 신호로 분리되었다. 가열 초기의 a-SiGe:H 박막 결함들의 스핀밀도의 증가는 수소 이탈에 기인하고, 또 고상결정화 과정에서 결정화된 정도와 Ge-db 스핀밀도의 변화는 서로 깊은 상관관계가 있음을 알 수 있었다. 특히 Ge 함유량이 큰 박막 (x=0.21, 0.67)에서 뿐만 아니라 소량의 Ge이 함유된 박막(x=0.05)에서도 Ge dangling-bond가 Si dangliong-bond 보다 고상결정화 과정에서 더 중요한 역할을 한다는 것을 알수 있었다. 또한 초기 열처리시 Si-H, Ge-H 결합에서 H의 이탈로 인하여 나타나는 Si-dangling bond, Ge-dangling bond 스핀밀도의 최대 증가 시간은 x 값에 의존하였는데 이러한 결과는 x값에 의존하는 Si-H, Ge-H 해리에너리지로 설명되어 질 수 있다. 층의 두께가 500 미만인 커패시터의 경우에 TiN과 Si3N4 의 계면에서 형성되는 슬릿형 공동(slit-like void)에 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 이러한 슬릿형 공동은 제조 공정 중 재료에 따른 열팽창 계수와 탄성 계수 등의 차이에 의해 형성된 잔류응력 상태가 유전막을 기준으로 압축응력에서 인장 응력으로 바뀌는 분포에 기인하였다는 사실을 확인하였다.SiO2 막을 약화시켜 절연막의 두께가 두꺼워졌음에도 기존의 SiO2 절연막의 절연 파괴 전압 및 누설 전류오 비교되는 특성을 가졌다. 이중막을 구성하고 있는 안티퓨즈의 ON-저항이 단일막과 비교해 비슷한 것을 볼 수 잇는데, 그 이유는 TiO2에 포함된 Ti가 필라멘트에 포함되어 있어 필라멘트의 저항을 감소시켰기 때문으로 사료된다. 결국 이중막을 구성시 ON-저항 증가에 의한 속도 저하 요인은 없다고 할 수 있다. 5V의 절연파괴 시간을 측정한느 TDDB 테스트 결과 1.1$\times$103 year로 기대수치인 수십 년보다 높아 제안된 안티퓨즈의 신뢰성을 확보 할 수 있었다. 제안된 안티퓨즈의 이중 절연막의 두께는 250 이고 프로그래밍 전압은 9.0V이고, 약 65$\Omega$의 on 저항을 얻을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인 측면에서도 고부가 가치의 제품 개발에 따른 새로운 수요 창출과 수익률 향상, 기존의 기능성 안료를 나노(nano)화하여 나노 입자를 제조, 기존의 기능성 안료에 대한 비용 절감 효과등을 유도 할 수 있다. 역시 기술적인 측면에서도 특수소재 개발에 있어 최적의 나노 입자 제어기술 개발 및 나노입자를 기능성 소재로 사용하여 새로운 제품의 제조와 고압 기상 분사기술의 최적화에 의한 기능성 나노 입자 제조 기술을 확립하고 2차 오염 발생원인 유기계 항균제를 무기계 항균제로 대체할 수 있다. 이와 더불

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.585-593
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• 2008

In this work, we report several experimental data capable of evaluating the phase transformation characteristics of GeSbTe pseudobinary thin films comprehensively utilized as phase change materials. The phase transformation of the GeSbTe thin films was confirmed by XRD measurement from amorphous to hexagonal structure via fee structure except for $Ge_8Sb_2Te_{11}$. In addition, X-ray photoelectron spectra analysis revealed to weaken Ge-Te bond for $Ge_2Sb_2Te_5$ and to strengthen the bonds of all elements for $Ge_8Sb_2Te_{11}$ during the amorphous to crystalline transition. The values of optical energy gap $(E_{OP})$ were around 0.71 and 0.50 eV and the slopes of absorption in extended region (B) were ${\sim}5.1{\times}10^5$ and ${\sim}10{\times}10^5cm^{-1}{\cdot}V^{-1}$ for the amorphous and fcc-crystalline structures, respectively. Finally, the kinetics of amorphous-to-crystalline phase change on the GeSbTe films was characterized using a nano-pulse scanner with 658-nm laser diode (power; $1{\sim}17$ mW, pulse duration; $10{\sim}460$ ns).

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.84-87
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• 2002

The Si$_{1-x}$ Gex/Si surface alloy (x = 0.3, 0.4 and 0.5), which are prepared by solid source MBE and have the SiGe epilayer thickness of 50$\AA$, are annealed with different parameters. The surface structure analyses of the heterostructure samples are made on a triple-axis X-ray diffractometer in grazing incidence X-ray diffraction (GIXRD) geometry. It has been found that with different annealing time (1.5h, 18h, 64h) and annealing temperature (550 $^{\circ}C$, 750 $^{\circ}C$), the SiGe epilayer experienced different strain relaxation process, which was deduced from the GIXRD measurements of the in-plane (220) diffraction peak of Si(001) substrate and the relevant (220) surface diffraction of SiGe epilayer. The results show that the stress relieving and the lateral strain relaxation in the SiGe/Si heterostructure can be promoted by correct annealing, which is very helpful for the preparation of SiGe/Si strained superlattice with fine strain crystallization..

• Journal of The Korean Astronomical Society
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• v.35 no.3
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• pp.111-121
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• 2002

We have measured the correlation functions of the optically selected clusters of galaxies in the Abell and the APM catalogs, and of the X-ray clusters in the X-ray-Brightest Abell-type Clusters of galaxies (XBACs) catalog and the Brightest Clusters Sample (BCS). The same analysis method and the same method of characterizing the resulting correlation functions are applied to all observational samples. We have found that the amplitude of the correlation function of the APM clusters is much higher than what has been previously claimed, in particular for richer subsamples. The correlation length of the APM clusters with the richness R $\ge$ 70 (as defined by the APM team) is found to be $r_0 = 25.4_{-3.0}^{+3.1}\;h^{-1}$ Mpc. The amplitude of correlation function is about 2.4 times higher than that of Croft et al. (1997). The correlation lengths of the Abell clusters with the richness class RC $\ge$ 0 and 1 are measured to be $r_0 = 17.4_{-1.1}^{+1.2}$ and $21.0_{-2.8}^{+2.8}\;h^{-1}$ Mpc, respectively, which is consistent with our results for the APM sample at the similar level of richness. The richness dependence of cluster correlations is found to be $r_0= 0.40d_c + 3.2$ where $d_c$ is the mean intercluster separation. This is identical in slope with the Bahcall & West (1992)'s estimate, but is inconsistent with the weak dependence of Croft et al. (1997). The X-ray bright Abell clusters in the XBACs catalog and the X-ray selected clusters in the BCS catalog show strong clustering. The correlation length of the XBACs clusters with $L_x {\ge}0.65{\times} 10^{44}\;h^{-2}erg\;s^{-1}$ is $30.3_{-6.5}^{+8.2}\;h^{-1}$ Mpc, and that of the BCS clusters with $L_x {\ge}0.70{\times} 10^{44}\;h^{-2}erg\;s^{-1}$ is $30.2_{-8.9}^{+9.8}\;h^{-1}$ Mpc. The clustering strength of the X-ray clusters is much weaker than what is expected from the optical clusters.

• Journal of the Korean Wood Science and Technology
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• v.2 no.2
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• pp.32-34
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• 1974

The important results which have been obtained in the investigation can be recapitulated as follows. 1. As demonstrated by the experimental results and analyses concerning their effects in the on-ground type mushroom house, the constructions in relation to the side wall and ceiling of the experimental house showed a sufficient heat insulation on effect to protect insides of the house from outside climatic conditions. 2. As the effect on the solar type experimental mushroom house which was constructed in a half basement has been shown by the experimental results and analyses, it has been proved to be effective for making use of solar heat. However there were found two problems to be improved for putting solar house to practical use in the farm mushroom growing: (1) the construction of the roof and ceiling should be the same as for the on ground type house, and (2) the solar heat generating system should be reconstructed properly. 3. Among several ventilation systems which have been studied in the experiments, the underground earthen pipe and ceiling ventilation, and vertical side wall and ceiling ventilation systems have been proved to be most effective for natural ventilation. 4. The experimental results have shown that ventilation systems such as the vertical side wall and underground ventilation systems are suitable to put to practical use as natural ventilation systems for farm mushroom house. These ventilation systems can remarkably improve the temperature of fresh air which is introduced into the house by heat transfers within the ventilation passages, so as to approach to the desired temperature of the house without any cooling or heating operation. For example, if it is assuming that X is the outside temperature and Y is the amount of temperature adjustment made by the influence of the ventilation system, the relationships that exist between X and Y can be expressed by the following regression lines. Underground iron pipe ventilation system. Y=0.9X-12.8 Underground earthen pipe ventilation system. Y=0.96X-15.11 Vertical side wall ventilation system. Y=0.94X-17.57 5. The experimental results have 8hown that the relationships existing between the admitted and expelled air and the $CO_2$ concentration can be described with experimental regression lines or an exponent equation as follows: 5.1 If it is assumed that X is an air speed cm/sec. and Y is an expelled air speed in cm/sec. in a natural ventilation system, since the Y is a function of the X, the relationships that exist between X and Y can be expressed by the regression lines shown below: 5.2 If it IS assumed that X is an admitted volume of air in $m^3$/hr. and Y is an expelled volume of air in $m^3$/hr. in a natural ventilation system, since the Y is a function of the X, the relationships that exist between X and Y can be expressed by the regression lines shown below. 5.3 If it is assumed that expelled air speed in emisec. and replacement air speed in cm/sec. at the bed surface in a natural ventilation system are shown as X and Y. respectively, since the Y is a function of the X. the relationships that exist between X and Y can be expressed by the following regression line: GE(100%)-CV (50%) ventilation system. Y=-0.54X+0.84 5.4 If it is assumed that the replacement air speed in cm/sec. at the bed surface is shown as X, and $CO_2$ concentration which is expressed by multiplying 1000 times the actual value of $CO_2$ % is shown as Y, in a natural ventilation system, since the Y is a function of the X, the relationships that exist between X and Y can be expressed by the following regression line: GE(100%)-CV(50%) ventilation system. Y=114.53-6.42X 5.5 If it is assumed that the expelled volume of air is shown as X and the $CO_2$ concencration which is expressed by multiplying 1000 times the actual of $CO_2$% is shown as Y in a natural ventilation system, since the Y is a function of the X, the relationships that exist between X and Y can be expressed by the following exponent equation: GE(100%)-CV(50%) ventilation system. Y=$127.18{\times}1.0093^{-x}$ 5.6 The experimental results have shown that the ratios of the cross sectional area of the GE and CV vent to the total cubic capacity of the house, required for providing an adequate amount of air in a natural ventilation system, can be estimated as follows: GE(admitting vent of the underground ventilation) 0.3-0.5% (controllable) CV(expelling vent of the ceiling ventilation) 0.8-1.0% (controllable) 6. Among several heating devices which were studied in the experiments, the hot-water boilor which wasmodified to be fitted both as hot-water boiler and as a pressureless steam-water was found most suitable for farm mushroom growing.

• Applied Microscopy
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• v.24 no.4
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.

• Journal of the Korean Electrochemical Society
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• v.15 no.3
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• pp.181-189
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• 2012

We developed a new high-yield synthesis method of free-standing germanium nanocrystals (Ge NCs) by means of the gas-phase photolysis of tetramethyl germanium in a closed reactor using an Nd-YAG pulsed laser. Size control (5-100 nm) can be simply achieved using a quenching gas. The $Ge_{1-x}Si_x$ NCs were synthesized by the photolysis of a tetramethyl silicon gas mixture and their composition was controlled by the partial pressure of precursors. The as-grown NCs are sheathed with thin (1-2 nm) carbon layers, and well dispersed to form a stable colloidal solution. Both Ge NC and Ge-RGO hybrids exhibit excellent cycling performance and high capacity of the lithium ion battery (800 and 1100 mAh/g after 50 cycles, respectively) as promising anode materials for the development of high-performance lithium batteries. This novel synthesis method of Ge NCs is expected to contribute to expand their applications in high-performance energy conversion systems.

• Journal of the Korean Vacuum Society
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• v.3 no.3
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• pp.337-340
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• 1994

기판의 크기에 따른 Strained Layer에서의 응력 풀림 현상을 연구하기 위하여 마이크론 이하에 서 50 마이크론의 크기를 가지는 메사 구조를 제작하였다. 제작된 메사 구조위에 성장시킨 GeSi층은 마 이크로 Raman, XPS, I-V와 C-V측정에 의하여 응력의 풀림현상을 관찰하였다. 이 실험을 통하여 메사 구조 위에 성장시킨 GexSi1-x 층에서의 응력풀림이 편평한 기판위에 성장시킨 경우에 비하여 원활하였 다. 이것은 메사 구조의 가장자리에 Strain Dislocation 이 편중되는 것으로 이해될수 있다.