• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.743-746
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• 2003

We have successfully used hydrophobic direct-wafer bonding, along with H-induced layer splitting of Ge, to transfer 700nm think, single-crystal Ge films to Si substrates. Optical and electrical properties have been also observed on these samples. Triple-junction solar cell structures gown on these Ge/Si heterostructure templates show comparable photoluminescence intensity and minority carrier lifetime to a control structure grown on bulk Ge. When heavily doped p$^{+}$Ge/p$^{+}$Si wafer bonded heterostructures were bonded, ohmic interfacial properties with less than 0.3Ω$\textrm{cm}^2$ specific resistance were observed indicating low loss thermal emission and tunneling processes over and through the potential barrier. Current-voltage (I-V) characteristics in p$^{+}$Ge/pSi structures show rectifying properties for room temperature bonded structures. After annealing at 40$0^{\circ}C$, the potential barrier was reduced and the barrier height no longer blocks current flow under bias. From these observations, interfacial atomic bonding structures of hydrophobically wafer bonded Ge/Si heterostructures are suggested.ested.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.143-144
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 40% 이상의 광변환 효율로 많은 주목을 받고 있다[1]. 삼중 접합 태양전지의 하부 셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용된다. Ge위에 성장될 III-V족 단결정막으로서 Ge과 격자상수가 일치하는 GaInP나 GaAs가 적합하고, 성장 중 V족 원소의 열확산으로 인해 Ge과 pn접합을 형성하게 된다. 이때 GaInP의 P의 경우 GaAs의 As보다 확산계수가 낮아 태양전지 변환효율향상에 유리한 얇은 접합 형성이 가능하고, 표면 에칭효과가 적기 때문에 GaInP를 단결정막으로 선택하여 p-type Ge기판 위 성장으로 단일접합 Ge구조 제작이 가능하다. 하지만 이종접합 구조 성장으로 인해 발생한 계면사이의 전위나 미세결함들이 결정막내부에 존재하게 되며 이러한 결함들은 광학소자 응용 시 비발광 센터로 작용할 뿐 아니라 소자의 누설전류를 증가시키는 원인으로 작용하여 태양전지 변환효율을 감소시키게 된다. 이에 결함감소를 통해 소자의 전기적 특성을 향상시키고자 수소 열처리나 플라즈마 공정을 통해 수소 원자를 박막내부로 확산시키고, 계면이나 박막 내 결함들과 결합시킴으로서 결함들의 비활성화를 유도하는 연구가 많이 진행되어 왔다 [2][3]. 하지만, 격자불일치를 갖는 GaInP/Ge 구조에 대한 수소 열처리 및 불순물 준위의 거동에 대한 연구는 많이 진행되어 있지 않다. 따라서 본 연구에서는 Ga0.45In0.55P/Ge구조에 수소 열처리 공정을 적용을 통하여 단결정막 내부 및 계면에서의 결함밀도를 제어하고 이를 통해 태양 전지의 변환효율을 향상시키고자 한다. <111> 방향으로 $6^{\circ}C$기울어진 p-type Ge(100) 기판 위에 유기금속화학증착법 (MOCVD)을 통해 Si이 도핑된 200 nm의 n-type GaInP층을 성장하여 Ge과 단일접합 n-p 구조를 제작하였다. 제작된 GaInP/Ge구조를 furnace에서 250도에서 90~150분간 시간변화를 주어 수소열처리 공정을 진행하였다. 저온 photoluminescence를 통해 GaInP층의 광학적 특성 변화를 관찰한 결과, 1.872 eV에서 free-exciton peak과 1.761 eV에서 Si 도펀트 saturation에 의해 발생된 D-A (Donor to Acceptor)천이로 판단되는 peak을 검출할 수 있었다. 수소 열처리 시간이 증가함에 따라 free-exciton peak 세기 증가와 반가폭 감소를 확인하였고, D-A peak이 사라지는 것을 관찰할 수 있었다. 이러한 결과는 수소 열처리에 따른 단결정막 내부의 수소원자들이 얕은 불순물(shallow impurity) 들로 작용하는 도펀트들이나, 깊은 준위결함(deep level defect)으로 작용하는 계면근처의 전위, 미세결함들과의 결합으로 결함 비활성화를 야기해 발광세기와 결정질 향상효과를 보인 것으로 판단된다. 본 발표에서는 상술한 결과를 바탕으로 한 수소 열처리를 통한 박막 및 계면에서의 결함준위의 거동에 대한 광분석 결과가 논의될 것이다.

• 대한지역사회영양학회지
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• 제12권6호
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• pp.761-772
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• 2007

It has been suggested that vegetables protect the cardiovascular system in part by attenuating blood pressure. The purpose of the present research was to examine blood lipids according to vegetable intakes. Anthropometric measurements, blood pressures, nutrient intakes using the 24-hour recall method, and serum lipids of <50th percentile vegetable intake group (<50th percentile VIG; men=66, women=111) and ${\ge}50th$ percentile vegetable intake group (${\ge}50th$ percentile VIG; men=83, women=94) were estimated. The average age, height, and BMI were 54.7 years, 158.2 cm, 62.2 kg, and $24.9kg/m^2$ for <50th percentile VIG and 53.7 years, 159.6 cm, 63.0 kg, and $24.7kg/m^2$ for ${\ge}50th$ percentile VIG, respectively. The daily food intake of the ${\ge}50th$ percentile VIG was significantly higher than that of the <50th percentile VIG (p<0.001). Also, daily intakes of cereals (p<0.001), legumes (p<0.05), nuts (p<0.05), vegetables (p<0.001), and fruits (p<0.05) of the ${\ge}50th$ percentile VIG were significantly higher than those of the <50th percentile VIG. The daily energy intakes of ${\ge}50th$ percentile VIG and <50th percentile VIG were 1342.7 kcal and 1782.0 kcal (p<0.001), and most nutrient intakes of the ${\ge}50th$ percentile VIG was significantly higher than that of the <50th percentile VIG. Serum cholesterol of the ${\ge}50th$ percentile VIG were significantly lower than that of the <50th percentile VIG (p<0.01). Also, vegetable intake showed significantly negative correlations with total cholesterol (p<0.05) and LDL-cholesterol (p<0.05). Based on these results, it should be emphasized that increase of vegetable intake improves the blood lipid profile.

• 한국전기전자재료학회논문지
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• 제20권6호
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• pp.491-495
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• 2007

This paper has demonstrated the electrical properties of SiGe pMOSFETs fabricated on both bulk-Si and PD SOI substrates. Two principal merits, the mobility increase in strained-SiGe channel and the parasitic capacitance reduction of SOI isolation, resulted in improvements in device performance. It was observed that the SiGe PD SOI could alleviate the floating body effect, and consequently DIBL was as low as 10 mV/V. The cut-off frequency of device fabricated on PD SOI substrate was roughly doubled in comparison with SiGe bulk: from 6.7 GHz to 11.3 GHz. These experimental result suggests that the SiGe PD SOI pMOSFET is a promising option to drive CMOS to enhance performance with its increased operation frequency for high speed and low noise applications.

• Bulletin of the Korean Chemical Society
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• 제34권12호
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• pp.3690-3694
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• 2013

The $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) is a new species. Its cycloaddition reactions is a new area for the study of germylene chemistry. The mechanism of the cycloaddition reaction between singlet state Cl2Ge=Ge: and formaldehyde has been investigated with CCSD(T)//MP2/$6-31G^*$ method. From the potential energy profile, it could be predicted that the reaction has only one dominant reaction pathway. The reaction rule presented is that the two reactants first form a fourmembered Ge-heterocyclic ring germylene through the [2+2] cycloaddition reaction. Because of the 4p unoccupied orbital of Ge: atom in the four-membered Ge-heterocyclic ring germylene and the ${\pi}$ orbital of formaldehyde forming a ${\pi}{\rightarrow}p$ donor-acceptor bond, the four-membered Ge-heterocyclic ring germylene further combines with formaldehyde to form an intermediate. Because the Ge: atom in intermediate hybridizes to an $sp^3$ hybrid orbital after transition state, then, intermediate isomerizes to a spiro-Ge-heterocyclic ring compound via a transition state. The research result indicates the laws of cycloaddition reaction between $H_2Ge=Ge:$ and formaldehyde, and laid the theory foundation of the cycloaddition reaction between $H_2Ge=Ge:$ and its derivatives ($X_2Ge=Ge:$, X = H, Me, F, Cl, Br, Ph, Ar${\ldots}{\ldots}$) and asymmetric ${\pi}$-bonded compounds, which is significant for the synthesis of small-ring and spiro-Ge-heterocyclic compounds. The study extends research area and enriches the research content of germylene chemistry.

• 한국축산식품학회지
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• 제40권3호
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• pp.426-443
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• 2020

In order to investigate the use of oil in water gelled emulsion (GE) prepared with healthier oil combinations as beef fat replacer in the fresh chicken sausage formulations, four batches of fresh sausages were produced. The first batch was control (C) sample formulated with %100 beef fat, other batches were codded as GE50, GE75, and GE100 respective to the percentage of beef fat replaced with GE. The addition of GE to sausage formulation resulted in an increment in moisture and protein contents while a decrement was observed in fat content (p<0.05). pH, cooking yield and water holding capacity values of GE added samples were found lower than C (p<0.05). GE addition caused lower CIE L* values in samples, however, this trend was not observed in CIE a* and CIE b* values. Initially, the lowest peroxide and the highest TBARS values were recorded in GE100 samples on the 0^th d (p<0.05). Peroxide and TBARS values were in the limits. The texture of samples was softened while total saturated fatty acid content reduced up to 52.61% with the incorporation of GE (p<0.05). Taken together, our results showed that GEs can be used as fat replacers in meat product formulations without causing undesirable quality changes.

• ETRI Journal
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• 제27권4호
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• pp.439-445
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• 2005

We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility $Si_{0.8}Ge_{0.2}$ buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 ${\mu}m$) $Si_xGe_{1-x}$ relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) $Si_{0.8}Ge_{0.2}$ layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.773-776
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• 2003

본 논문에서는 p형 SiGe pMOSFET를 디자인하고 온도에 따른 전기적 특성들을 분석하였다. 채널 길이는 0.9$\mu\textrm{m}$로 하였으며, 온도는 300K와 77K일 때의 특성을 조사하였다. 게이트 전압이 -1.5V로 인가되었을 때, 실온에서는 -0.97V의 문턱전압 값을 얻었으나 77K에서는 -1.15V의 문턱전압 값을 얻었다. 이것은 실온에서의 Si pMOSFET가 갖는 문턱전압 값(-1.36V)보다 동작특성이 우수함을 알 수 있었다.

• Journal of Neurogastroenterology and Motility
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• 제25권3호
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• pp.387-393
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• 2019

Background/Aims Delayed gastric emptying (GE) is associated with high morbidity and mortality in subjects with diabetes. The aim of this study is to investigate associations between GE time and the major cardiovascular events (coronary heart diseases and ischemic stroke) in diabetic subjects with upper gastrointestinal (UGI) symptoms. Methods Among 259 subjects with chronic UGI symptoms who underwent gastric emptying study (GES) over 13 years, 122 diabetic subjects without gastric surgery and/or rapid GE were enrolled in this study. We also gathered data about baseline demographics, clinical characteristics, estimated GE half-time (GE T½) and incidence of cardiovascular events following GES. Results The mean age of subjects was 64.0 ± 17.4 years. There were 86 women and 104 subjects with type 2 diabetes. There were 52 (42.6%) subjects with normal GE, 50 (41.0.%) subjects with mild delayed GE, and 20 (16.4%) subjects with marked delayed GE. During follow-up (median, 207 weeks), cardiovascular events occurred in 7 (13.5%) subjects with normal GE, 4 (8.0%) subjects with mild delayed GE and 7 (35.0%) subjects with marked GE (P = 0.015). Univariate analysis showed that GE T½ was significantly associated with incidence of cardiovascular events (crude OR, 1.74; 95% CI, 1.12-2.69; P = 0.014). In a multivariate model, association between GE T½ and incidence of cardiovascular events remained statistically significant after adjustment for baseline characteristics and comorbidities (adjusted OR, 1.94; 95% CI, 1.21-3.12; P = 0.006). Conclusion A delay of GE was associated with an increased incidence of cardiovascular events in diabetic subjects with chronic UGI symptoms.

• 한국전기전자재료학회논문지
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• 제20권3호
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• pp.240-244
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• 2007

We investigated the diffraction grating efficiency by the Diode Pumped Solid State(DPSS 532 nm) laser beam wavelength to improve the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35},\;Ag/As_{40}Ge_{10}Se_{15}S_{35}$ and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Diffraction efficiency was obtained from DPSS laser, used (P:P)polarized laser beam on each thin films. As a result, for the laser beam intensity in $0.24mW/cm^2$, single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film shows the highest value of 0.161% diffraction efficiency at 300 s and for laser beam intensity in $2.4mW/cm^2$, it was recorded with the fastest speed of 50 s(0.013%), which the diffraction grating forming speed is faster than that of $0.24mW/cm^2$ beam. $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ double layer and $As_{40}Ge_{10}Se_{15}S_{35}/Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layered thin film also show the faster grating forming speed at $2.4mW/cm^2$ and higher value of diffraction efficiency at $0.24mW/cm^2$.